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this is information on a product in full production. march 2013 docid023758 rev 4 1/12 12 STN3P6F6 p-channel 60 v, 0.13 typ., 3 a stripfet? vi deepgate? power mosfet in a sot-223 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * qg industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a p-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. sot-223 1 2 4 3 d (2, 4) g (1) s ( 3 ) order code v dss r ds(on)max i d STN3P6F6 60 v 0.16 @ 10 v 3 a table 1. device summary order code marking package packaging STN3P6F6 STN3P6F6 sot-223 tape and reel www.st.com
contents STN3P6F6 2/12 docid023758 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid023758 rev 4 3/12 STN3P6F6 electrical ratings 1 electrical ratings note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t pcb = 25 c 3 a i d drain current (continuous) at t pcb = 100 c 2 a i dm drain current (pulsed) 12 a p tot (1) 1. pulse width is limited by safe operating area. total dissipation at t pcb = 25 c 2.6 w t j p stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 15 mm 2 , 2 oz cu, t<10 sec thermal resistance junction-pcb max 57 c/w
electrical characteristics STN3P6F6 4/12 docid023758 rev 4 2 electrical characteristics (tcase = 25 c unless otherwise specified). note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v v ds = 60 v, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.5 a 0.13 0.16 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 48 v, f = 1 mhz, v gs = 0 - 340 40 20 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v, i d = 3 a, v gs = 10 v (see figure 14 ) - 6.4 1.7 1.7 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 48 v, i d = 1.5 a, r g = 4.7 , v gs = 10 v (see figure 13 ) - 6.4 5.3 14 3.7 - ns ns ns ns
docid023758 rev 4 5/12 STN3P6F6 electrical characteristics note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 3 12 a a v sd (2) 2. pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 16 v, t j = 150 c (see figure 15 ) - 20 17.8 1.8 ns nc a
electrical characteristics STN3P6F6 6/12 docid023758 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 0.1 0.01 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 1 s 10m s tj=175c tc=25c s ingle p u l s e 1 10 am15 33 9v1 pcb p c b i d 15 10 5 0 0 10 v d s (v) (a) 5 20 v g s = 4 v v g s = 5 v v g s = 10 v 25 v g s = 6 v am15 3 40v1 i d 15 10 5 0 2 4 v g s (v) 6 (a) 3 5 7 20 8 v d s = 9 v 9 10 25 am15 3 46v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd = 3 0v i d = 3 a am15 3 41v1 r d s (on) 140 120 100 1 4 i d (a) (m ) 2 6 160 1 8 0 8 3 579 v g s =10v am15 3 50v1
docid023758 rev 4 7/12 STN3P6F6 electrical characteristics figure 8. capacitance variations figure 9. normalized b vdss vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics c 150 100 50 0 0 20 v d s (v) (pf) 10 3 0 ci ss co ss cr ss 40 50 200 250 3 00 3 50 400 am15 3 42v1 v d s -55 -5 t j (c) (norm) - 3 0 70 20 45 95 0.90 0.95 1 1.05 1.10 1.15 i d = 1ma 120 am15 3 49v1 v g s (th) 0.90 0. 8 0 0.70 0.60 -55 -5 t j (c) (norm) - 3 0 1 70 20 45 95 120 1.10 i d =250 a am15 3 44v1 r d s (on) 1 0. 8 0.6 0.4 -55 -5 t j (c) - 3 0 20 1.2 1.4 v g s =10v 45 70 95 120 1.6 1. 8 2 (norm) am15 3 50v1 v s d 2 6 i s d (a) (v) 4 8 0.55 0.65 0.75 0. 8 5 0.95 1.05 t j =-55c t j =175c t j =25c am15 3 45v1
test circuits STN3P6F6 8/12 docid023758 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times
docid023758 rev 4 9/12 STN3P6F6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STN3P6F6 10/12 docid023758 rev 4 figure 16. sot-223 mechanical data drawing table 8. sot-223 mechanical data dim. mm min. typ. max. a 1.80 a1 0.02 0.1 b 0.60 0.70 0.85 b1 2.90 3.00 3.15 c 0.24 0.26 0.35 d 6.30 6.50 6.70 e2.30 e1 4.60 e 3.30 3.50 3.70 h 6.70 7.00 7.30 v 10 0046067_m
docid023758 rev 4 11/12 STN3P6F6 revision history 5 revision history table 9. document revision history date revision changes 31-oct-2012 1 first release. 09-nov-2012 2 modified: note 1 in table 3 16-jan-2013 3 document status promoted from preliminary data to production data 14-mar-2013 4 modified: figure 1 , 3 , c iss , c oss , c rss typical values in table 5
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