2sd2440 2004-07-07 1 toshiba transistor silicon npn triple diffused type 2sd2440 switching application ? high breakdown voltage: v cbo = 100 v : v ebo = 18 v ? low saturation voltage: v ce (sat) = 1.2 v (max) (i c = 5 a, i b = 1 a) ? high speed: t f = 1 s (typ.) (i c = 5 a, i b = 0.5 a) ? high dc current gain: h fe = 200 (min) (v ce = 5 v, i c = 0.5 a) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 18 v dc i c 6 collector current pulse i cp 12 a base current i b 2 a collector power dissipation (tc = 25c) p c 40 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-16f1a weight: 5.8 g (typ.)
2sd2440 2004-07-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 100 v, i e = 0 D D 10 a collector cut-off current i cer v ce = 80 v, r be = 50 ? D D 5 ma emitter cut-off current i ebo v eb = 15 v, i c = 0 D D 2 a collector-emitter breakdown voltage v (br) ceo i c = 50 ma, i b = 0 60 D D v h fe (1) (note) v ce = 5 v, i c = 0.5 a 200 D 900 dc current gain h fe (2) v ce = 5 v, i c = 5 a 20 D 100 collector-emitter saturation voltage v ce (sat) i c = 5 a, i b = 1 a D D 1.2 v base-emitter saturation voltage v be (sat) i c = 5 a, i b = 1 a D D 2.5 v transition frequency f t v ce = 10 v, i c = 0.5 a D 5 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 71 D pf turn-on time t on D 1 2 storage time t stg D 2 4 switching time fall time t f i b1 = ? i b2 = 0.5 a, duty cycle 1% D 1 3 s note: h fe (1) classification gr: 200 to 400, bl: 300 to 600, v: 450 to 900 marking 2440 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator part no. (or abbreviation code) i b1 20 s v cc = 50 v i b2 output 10 ? i b2 i b1 input
2sd2440 2004-07-07 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) pulse width t w (s) r th (t) ? t w transient thermal resistance r th (t) (c/w) 16 12 8 4 6 4 8 10 2 0 0.2 50 m 2 i b = 5 ma 1 3 0.5 0.3 20 m 0.1 common emitter tc = 25c 0 0 12 tc = ? 55c 25 4 6 common emitter v ce = 5 v 125 8 0 0.4 1.2 2.4 0.8 1.6 2.0 2 10 tc = ? 55c 25 common emitter v ce = 5 v 125 0.01 5 0.1 1 0.03 0.3 3 10 20 3000 30 300 1000 100 10 50 500 10 0.01 3 0.03 0.005 0.1 1 tc = 125c 25 ? 55 common emitter i c /i b = 5 0.3 1 0.03 0.3 3 0.1 10 20 0.01 tc = ? 55c 25 common emitter i c /i b = 5 125 0.01 0.05 0.1 1 0.03 0.3 3 10 20 0.3 3 10 1 0.1 0.5 5 0.1 0.001 0.01 1 10 1 5 10 0.1 3 0.5 0.3 curves should be applied in thermal limited area. ? infinite heat sink
2sd2440 2004-07-07 4 collector current i c (a) collector-emitter voltage v ce (v) safe operating area 50 3 1 30 100 1 30 * : single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed) * dc operation tc = 25c 1 ms * 0.1 0.3 10 0.5 5 3 5 10 100 ms* 10 ms * v ceo max
2sd2440 2004-07-07 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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