? 2009 ixys corporation, all rights reserved ds100218(12/09) IXTH500N04T2 ixtt500n04t2 trencht2 tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c40 v v dgr t j = 25 c to 175 c, r gs = 1m 40 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 500 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 1250 a i a t c = 25 c 100 a e as t c = 25 c 800 mj p d t c = 25 c 1000 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 40 v v gs(th) v ds = v gs , i d = 250 a 1.5 3.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 750 a r ds(on) v gs = 10v, i d = 100a, notes 1 & 2 1.6 m v dss = 40v i d25 = 500a r ds(on) 1.6m features z international standard packages z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic diode z low r ds(on) advantages z easy to mount z space savings z high power density applications ? synchronous buck converters ? high current switching power supplies ? battery powered electric motors ? resonant-mode power supplies ? electronics ballast application ? class d audio amplifiers advance technical information g = gate d = drain s = source tab = drain to-247 (ixth) to-268 (ixtt) g s d (tab) s g d (tab) d
ixys reserves the right to change limits, test conditions, and dimensions. IXTH500N04T2 ixtt500n04t2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. includes lead resistance. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 75 125 s c iss 25 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4410 pf c rss 970 pf r gi gate input resistance 1.1 t d(on) 37 ns t r 16 ns t d(off) 68 ns t f 44 ns q g(on) 405 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 105 nc q gd 118 nc r thjc 0.15 c/w r thch to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 500 a i sm repetitive, pulse width limited by t jm 1500 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 84 ns i rm 3.1 a q rm 130 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 200a r g = 1 (external) i f = 100a, v gs = 0v -di/dt = 100a/ s v r = 20v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixtt) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2009 ixys corporation, all rights reserved IXTH500N04T2 ixtt500n04t2 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.00.10.20.30.40.5 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v 4v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 280 320 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7 v 5 v 6 v 4 v 3 v fig. 4. r ds(on) normalized vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 500a fig. 5. r ds(on) normalized vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 400 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 v ds - volts i d - amperes v gs = 15v 10 v 8 v 7 v 4v 5v 6v
ixys reserves the right to change limits, test conditions, and dimensions. IXTH500N04T2 ixtt500n04t2 fig. 7. input admittance 0 50 100 150 200 250 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 220 240 260 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.30.40.50.60.70.80.91.01.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 20v i d = 250a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10,000 0.1 1 10 100 v ds - volts i d - amperes 25s 100s 1ms 10ms dc r ds(on) limit t j = 175oc t c = 25oc single pulse external lead limit 100ms
? 2009 ixys corporation, all rights reserved IXTH500N04T2 ixtt500n04t2 fig. 14. resistive turn-on rise time vs. drain current 0 10 20 30 40 50 60 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 60 70 80 90 100 110 120 130 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 30 40 50 60 70 80 90 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 70 80 90 100 110 120 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 0 10 20 30 40 50 60 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 20v 100a < i d < 200a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 200a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXTH500N04T2 ixtt500n04t2 ixys ref: t_500n04t2(98)12-09-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance dfafas 0.300
|
