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www.irf.com 1 top view 8 1 2 3 4 5 6 7 d d d g s a d s s features advanced process technology low on-resistance p-channel mosfet dynamic dv/dt rating 150c operating temperature fast switching fully avalanche rated lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cel- lular design of hexfet? power mosfets utilizes the lat- est processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automo- tive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the speci fica- tions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. so-8 auirf7416q automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss -30v r ds(on) max. 0.02 i d -10a parameter max. units i d @ t a = 25c continuous drain current, v gs @ -10v -10 i d @ t a = 70c continuous drain current, v gs @ -10v -7.1 i dm pulsed drain current -45 p d @t a = 25c power dissipation 2.5 linear derating factor 0.02 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 370 mj dv/dt peak diode recovery dv/dt -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient 50 c/w w a c -55 to + 150 2 www.irf.com s d g !" #$ "% &'()*+&', &' *- &.'/0!" 1 $ i sd .'/0* 02*3 3 * % '() 4 52 6 "# 1.7 * static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -30 ??? ??? v . 0.0 0.00 0.0 1.0 .0 . 1.0 100 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 61 92 q gs gate-to-source charge ??? 8.0 12 q gd gate-to-drain ("miller") charge ??? 22 32 t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 49 ??? t d(off) turn-off delay time ??? 59 ??? t f fall time ??? 60 ??? c iss input capacitance ??? 1700 ??? c oss output capacitance ??? 890 ??? c rss reverse transfer capacitance ??? 410 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.0 v t rr reverse recovery time ??? 56 85 ns t j = 25c,i f = -5.6a q rr reverse recovery charge ??? 99 150 nc di/dt = 100a/ s -45 ??? ??? ??? ??? mosfet symbol showing the v ds = -24v -3.1 na a a pf ns nc i d = -5.6a r g = 6.2 , ., 0 integral reverse p-n junction diode. conditions r d = 2.7 , . 10 v gs = 0v v ds = -25v ? = 1.0mhz, see fig. 5 v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c v gs = -10v, see fig. 6 & 9 conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -5.6a v gs = 20v v dd = -15v r ds(on) static drain-to-source on-resistance v gs = -4.5v, i d = -2.8a conditions v ds = -10v, i d = -2.8a i d = -5.6a v gs = -20v v ds = v gs , i d = -250 a www.irf.com 3 !""##$" %&!'%()*)+ $ + !# ,- !-.-# qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 425v) ??? aec-q101-002 human body model class h1b (+/- 1000v) ??? aec-q101-001 4 www.irf.com /$01 2#3$! 34!1 ! ( 34!1 ! ( 34!3( 1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -5.6a d www.irf.com 5 34!5 62- 34!(!2# 5 2- 7&$ $51!-' 34!8( -2# 85 2- 0 1000 2000 3000 4000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 20406080100 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v ds ds for test circuit see figure 9 i = -5.6a d 1 10 100 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -v , source-to-drain voltage (v) -i , reverse drain current (a) 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 6 www.irf.com 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 7&$ $%.33 $$!9: '$ 5 -3$3( 5 -3$;.$ <8( -;.$ + - 3 1 0.1 % 3 3 89% .3 d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - )*2 q g q gs q gd v g charge v ds 90% 10% v gs t d(on) t r t d(off) t f www.irf.com 7 7&$ $'. %-4 2#( =$! .;.$ =$! .3( t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom -2.5a -4.5a -5.6a 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period >? @@@ 3 &'3# + + 538 8 6( ,%a6%35 @ + - + + + - - - 3 ? ? - 81 :8: ? 89%.8 9 % )+ ) ? + "- ? ; 4 ? + + < - ) % # @ 4 # 4.) ==9 4.) 8 # 4.) > 3 = @@ www.irf.com 9 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking ! 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