qjd0142003 powerex inc., 200 hillis st., youngwood 15697 (724) 925-7272 dual power mosfet module 100 volts 420 amperes preliminary page 1 1/30/2001 description: powerex dual mosfet module designed specially for customer applications. features: ? isolated mounting ? copper baseplate ? low drive requirement ? internal series gate resistors (6 ? ? ? ? per chip) ? low rds(on) ? fast diodes ? (6) fs70umj-2 chips per mosfet switch dim inches millimeters a 3.70 94.0 b 3.150 0.01 80.0 0.25 c 1.89 48.0 d 1.18 max. 30.0 max e 0.90 23.0 f .83 21.2 g 0.71 18.0 h 0.67 17.0 j 0.63 16.0 k 0.51 13.0 l 0.47 12.0 m 0.30 7.5 n 0.28 7.0 p 0.256 dia. dia. 6.5 q 0.26 6.5 r --- m5 s 0.16 4.0 c1 c2e 1 e2 se1 g1 se2 g2
qjd0142003 powerex inc., 200 hillis st., youngwood 15697 (724) 925-7272 dual power mosfet module 100 volts 420 amperes preliminary page 2 1/30/2001 electrical characteristics (tc = 25 c) symbol parameter min. typ. max. units v (br)dss drain source breakdown voltage i d =6ma, v gs =0 100 -- -- v v gss gate source voltage v ds =0 -- -- 20 v i gss gate leakage current v gs = 20v, v ds =0 -- -- 0.6 a i dss drain leakage current v ds =100v, v gs =0 -- -- 0.6 ma v gs(th) gate source threshold voltage i d =6ma, v ds =10v 1.0 1.5 2.0 v r ds(on) drain source on state resistance i d =210a, v gs =10v -- 2.2 2.8 m ? v ds(on) drain source on-state voltage i d =210a, v gs =10v -- 0.46 0.6 v c iss input capacitance v ds =10v, v gs =0, f =1mhz -- 49200 -- pf c oss output capacitance v ds =10v, v gs =0, f =1mhz -- 6900 -- pf c rss reverse transfer capacitance v ds =10v, v gs =0, f =1mhz -- 3600 -- pf v sd source drain voltage i s =210a, v gs =0v -- 1.0 1.5 v r th(j-c) thermal impedance junction to case (per mosfet) -- 0.13 0.16 c/w t j junction temperature -40 -- 125 c package vrms v isolation -- -- 2000 vac module weight -- 270 -- g mounting torque m5 terminal screw -- -- 4 nm terminal torque, m6 mounting screw -- -- 6 nm r th(c-s) thermal impedance case to sink -- -- 0.035 c/w
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