ss9015 pnp epitaxial silicon transistor low frequency, low noise amplifier complement to ss9014 absolute maximum ratings (t a =25 c ) electrical characteristics (t a =25 c ) h fe classification characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector dissipation junction temperature storage temperature v cbo v ceo v ebo i c p c t j t stg -50 -45 -5 -100 450 150 -55 ~ 150 v v v ma mw c c characteristic symbol test conditions min typ max unit collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current dc current gain collector-base saturation voltage base-emitter saturation voltage base-emitter on voltage output capacitance current gain-bandwidth product noise figure bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) v be (sat) v be (on) c ob f t nf i c = -100 m a , i e =0 i c = -1ma, i b =0 i e = -100 m a , i c =0 v cb = -50v, i e =0 v eb = -5v, i c =0 v ce = -5v, i c = -1ma i c = -100ma, i b = -5ma i c = -100ma, i b = -5ma v ce = -5v, i c = -2ma v cb = -10v, i e =0 f=1mhz v ce = -5v, i c = -10ma v ce = -5v, i c = -0.2ma f=1khz, r s =1 k w -50 -45 -5 60 -0.6 100 200 -0.2 -0.82 -0.65 4.5 190 0.7 -50 -50 600 -0.7 -1.0 -0.75 7.0 10 v v v na na v v pf mhz db classification a b c h fe 60-150 100-300 200-600 to-92 1. emitter 2. base 3. collector ? 1999 fairchild semiconductor corporation rev. b
ss9015 pnp epitaxial silicon transistor
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