switches - chip 1 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz features functional diagram general description the HMC986 is a wideband gaas phemt mmic single pole double throw (spdt) switch die. this tiny switch employs a refective topology and is controlled with two complementary inputs of 0/-3v to 0/-5v. with an input signal at 40 ghz, the HMC986 exhibits 20 db return loss, 31 db isolation, and only 1.9 db insertion loss. the combination of wideband performance and fast switching speed make this switch ideal for test equipment, switching matrices, and electronic warfare (ew) applications. rf performance is independent of high level control voltages, and is shown at both -3v and -5v for completeness. wideband performance: 0.1 to 50 ghz low insertion loss: 1.9 db at 40 ghz high isolation: 31 db at 40 ghz fast switching speed: 10 ns compact die size: 0.98 x 0.75 x 0.1 mm electrical specifcations, t a = +25 c, with 0/-3v to -5v control, 50 ohm system typical applications the HMC986 is ideal for: ? wideband switching matrices ? high speed data infrastructure ? military comms, radar, and ecm ? test and measurement equipment ? jamming and ew subsystems parameter frequency min. typ. max. units insertion loss 0.1 - 18 ghz 18 - 40 ghz 40 - 50 ghz 1.7 1.9 2.2 2.3 2.5 2.8 db db db isolation 0.1 - 18 ghz 18 - 40 ghz 40 - 50 ghz 30 25 22 36 32 28 db db db return loss on state 0.1 - 50 ghz 20 db input power for 0.1 db compression 0.1 - 2 ghz 2 - 50 ghz 5 21 dbm dbm input power for 1.0 db compression 0.1 - 2 ghz 2 - 50 ghz 22 10 25 dbm dbm input third order intercept (two-tone input power = 0 dbm each tone, 1 mhz tone separation) 0.1 - 2 ghz 2 - 50 ghz 20 40 dbm dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) 0.1 - 50 ghz 1 10 ns ns for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 2 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz return loss @-5v insertion loss @-5v isolation @-5v -5 -4 -3 -2 -1 0 0 10 20 30 40 50 60 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -75 -60 -45 -30 -15 0 0 10 20 30 40 50 60 rf1 rf2 isolation (db) frequency (ghz) -40 -30 -20 -10 0 0 10 20 30 40 50 60 rfc rf1 rf2 return loss (db) frequency (ghz) return loss @-3v insertion loss @-3v isolation @-3v -5 -4 -3 -2 -1 0 0 10 20 30 40 50 60 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -75 -60 -45 -30 -15 0 0 10 20 30 40 50 60 rf1 rf2 isolation (db) frequency (ghz) -40 -30 -20 -10 0 0 10 20 30 40 50 60 rfc rf1 rf2 return loss (db) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 3 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz input power for 0.1 db compression @-5v (low frequency detail) -5 0 5 10 15 20 25 0 0.1 1 10 100 +25 c +85 c -55 c compression point (dbm) frequency (ghz) input power for 0.1 db compression @-5v 0 5 10 15 20 25 0 10 20 30 40 +25 c +85 c -55 c compression point (dbm) frequency (ghz) input power for 0.1 db compression @-3v (low frequency detail) -5 0 5 10 15 20 25 0 0.1 1 10 100 +25 c +85 c -55 c compression point (dbm) frequency (ghz) input power for 0.1 db compression @-3v 0 5 10 15 20 25 0 10 20 30 40 +25 c +85 c -55 c compression point (dbm) frequency (ghz) input power for 1.0 db compression @-5v (low frequency detail) 0 5 10 15 20 25 30 0 0.1 1 10 100 +25 c +85 c -55 c compression point (dbm) frequency (ghz) input power for 1.0 db compression @-3v (low frequency detail) 0 5 10 15 20 25 30 0 0.1 1 10 100 +25 c +85 c -55 c compression point (dbm) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 4 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz input third order intercept point @-5v (low frequency detail) 10 20 30 40 50 0 0.1 1 10 100 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) truth table absolute maximum ratings control voltages state bias condition low 0 to -0.2v @ 1 ua typ. high -3v to -5v @ 10 ua typ. rf input power (0.1 - 0.5 ghz) +5 dbm rf input power (0.5 - 2 ghz) +18 dbm rf input power (2 - 50 ghz) +25 dbm control voltage range (v1, v2) +0.5 v to -5.5 v hot switch power level (0.1 - 0.5 ghz) +3 dbm hot switch power level (0.5 - 2 ghz) +16 dbm hot switch power level (2 - 50 ghz) +23 dbm channel temperature 150 c continuous pdiss (t=85 c) (derate 4.0 mw/ c above 85c ) 0.26 w thermal resistance (channel to die bottom) 250 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions v1 v2 state high low rfc to rf1 low high rfc to rf2 input third order intercept point @-3v (low frequency detail) 10 20 30 40 50 0 0.1 1 10 100 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) input third order intercept point @-5v 10 20 30 40 50 0 10 20 30 40 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) input third order intercept point @-3v 10 20 30 40 50 0 10 20 30 40 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 5 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. backside metalization: gold 4. backside metal is ground 5. bond pad metalization: gold 6. overall die size .002 die packaging information [1] standard alternate wp-13 (waffle pack) [2] [1] refer to the packaging information section of the hittite website for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. die pad dimensions pad number size 2, 5, 8 .004 x .004 1, 3, 4, 6, 7, 9, 10, 11, 12, 13 .003 x .003 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 6 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz pad number function description interface schematic 2, 5, 8 rf1, rfc, rf2 these pads are dc coupled and matched to 50 ohm. blocking capacitors are required if rf line potential is not equal to 0v. 11 v2 see truth table and control voltage table. 12 v1 1, 3, 4, 6, 7, 9 rf signal grounds these pads are connected to die backside ground and can be utilized to realize ground-signal-ground interface for optimum rf performance. HMC986 datasheet performance was measured with ground-signal-ground interface on rf1, rfc, and rf2. 10, 13 control signal ground returns these pads are connected to die backside ground and are optional for use as v1, v2 control signal ground return. pad descriptions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 7 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
switches - chip 8 HMC986 v01.0212 gaas mmic reflective spdt switch, 0.1 - 50 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (dc bias, if1 and if2) or ribbon bond (rf and lo ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultra - sonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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