bav300...bav303 vishay telefunken 1 (5) rev. 6, 25-jun-01 www.vishay.com document number 85545 switching diode features silicon epitaxial planar diodes saving space hermetic sealed parts fits onto sod 323 / sot 23 footprints electrical data identical with the devices bav100...bav103 / bav200...bav203 applications general purposes 96 12315 order instruction type type differentiation ordering code remarks bav300 v rrm = 60 v bav300tr tape and reel bav301 v rrm = 120 v bav301tr tape and reel bav302 v rrm = 200 v bav302tr tape and reel bav303 v rrm = 250 v bav303tr tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit bav300 60 v peak reverse voltage bav301 v rrm 120 v peak reverse voltage bav302 v rrm 200 v bav303 250 v bav300 50 v reverse voltage bav301 v 100 v reverse voltage bav302 v r 150 v bav303 200 v forward current i f 250 ma peak forward surge current t p =1s, t j =25 c i fsm 1 a forward peak current f=50hz i fm 625 ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient mounted on epox y g lass hard tissue, fi g . 1 r t h j a 500 k/w yg , g 35 m copper clad, 0.9 mm 2 copper area per electrode thja
bav300...bav303 vishay telefunken 2 (5) rev. 6, 25-jun-01 www.vishay.com document number 85545 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =100ma v f 1 v v r =50 v bav300 i r 100 na v r =100 v bav301 i r 100 na v r =150 v bav302 i r 100 na reverse current v r =200 v bav303 i r 100 na reverse current t j =100 c, v r = 50 v bav300 i r 15 a t j =100 c, v r = 100 v bav301 i r 15 a t j =100 c, v r = 150 v bav302 i r 15 a t j =100 c, v r = 200 v bav303 i r 15 a bav300 60 v breakdown voltage i r =100 at /t=0 01 t =0 3ms bav301 v (br) 120 v breakdown voltage i r = 100 a , t p /t = 0 . 01 , t p = 0 . 3ms bav302 v (br) 200 v bav303 250 v diode capacitance v r =0, f=1mhz c d 1.5 pf differential forward resistance i f =10ma r f 5 reverse recovery time i f =i r =30ma, i r =3ma, r l =100 t rr 50 ns characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0.01 0.1 1 10 1000 i reverse current ( a ) r t j junction temperature ( c ) 200 94 9084 100 scattering limit v r =v rrm figure 1. reverse current vs. junction temperature 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) 2.0 94 9085 scattering limit t j =25 c figure 2. forward current vs. forward voltage
bav300...bav303 vishay telefunken 3 (5) rev. 6, 25-jun-01 www.vishay.com document number 85545 0.1 1 10 1 10 100 1000 r differential forward resistance ( ) f i f forward current ( ma ) 100 94 9089 t j =25 c figure 3. differential forward resistance vs. forward current 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 figure 4. board for r thja definition (in mm) 1.2 0.8 2.4 0.8 0.8 16773 reflow soldering figure 5. 1.4 1.0 2.8 0.9 0.9 16774 wave soldering figure 6.
bav300...bav303 vishay telefunken 4 (5) rev. 6, 25-jun-01 www.vishay.com document number 85545 dimensions in mm 96 12072
bav300...bav303 vishay telefunken 5 (5) rev. 6, 25-jun-01 www.vishay.com document number 85545 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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