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?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt june 2006 fga120n30d 300v pdp igbt features ? high current capability ? low saturation voltage: v ce(sat), typ = 1.1v@ i c = 25a ? high input impedance description employing unified igbt tech nology, fga120n30d provides low conduction and switching loss. fga120n30d offers the optimum solution for pdp applications where low condution loss is essential. absolute maximum ratings notes: (1) repetitive test , pulse width = 100usec , duty = 0. 2 * ic_pulse limited by max tj thermal characteristics g c e g c e g c e to-3p symbol description fga120n30d units v ces collector-emitter voltage 300 v v ges gate-emitter voltage 30 v i c collector current @ t c = 25 c 120 a i cm pulsed collector current (note 1) @ t c = 25 c 300 a i f diode continuous forward current @ t c = 100 c10 a i fm diode maximum forward current 40 a p d maximum power dissipation @ t c = 25 c 290 w maximum power dissipation @ t c = 100 c116 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, j unction-to-case for igbt -- 0.43 c / w r jc (diode) thermal resistance, junction-to-case for diode -- 1.56 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w t c = 25c unless otherwise noted
2 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package re el size tape width quantity fga120n30d fga120n30d to-3p -- -- 30 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250 a 300 -- -- v ? bv ces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a--0.6--v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 100 a i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 2.5 4.0 5.0 v v ce(sat) collector to emitter saturation voltage i c = 25a , v ge = 15v -- 1.1 1.4 v i c = 120a , v ge = 15v -- 1.9 -- v i c = 120a , v ge = 15v, t c = 125 c -- 2.0 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2310 - pf c oes output capacitance -- 360 - pf c res reverse transfer capacitance -- 100 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 25a, r g = 8.7 ? , v ge = 15v, resistive load, t c = 25 c -- 30 -- ns t r rise time -- 270 -- ns t d(off) turn-off delay time -- 100 -- ns t f fall time -- 130 300 ns e on turn-on switching loss -- 0.17 -- mj e off turn-off switching loss -- 0.56 -- mj e ts total switching loss -- 0.73 -- mj t d(on) turn-on delay time v cc = 200v, i c = 25a, r g = 8.7 ? , v ge = 15v, resistive load, t c = 125 c -- 30 -- ns t r rise time -- 280 -- ns t d(off) turn-off delay time -- 105 -- ns t f fall time -- 180 -- ns e on turn-on switching loss -- 0.18 -- mj e off turn-off switching loss -- 0.9 -- mj e ts total switching loss -- 1.08 -- mj q g total gate charge v ce = 200v, i c = 25a, v ge = 15v -- 120 180 nc q ge gate-emitter charge -- 15 22 nc q gc gate-collector charge -- 60 90 nc
3 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt electrical characteristics of diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 10a t c = 25 c--1.11.4v t c = 125 c--0.9-- t rr diode reverse recovery time i f = 10a di/dt = 200a/ s t c = 25 c--21--ns t c = 125 c--35-- i rr diode peak reverse recovery cur- rent t c = 25 c--2.8-- a t c = 125 c--5.6-- q rr diode reverse recovery charge t c = 25 c -- 29.4 -- nc t c = 125 c--98--
4 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0246 0 30 60 90 120 150 180 20v 15v 12v 10v v ge =8v t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 150 180 20v 15v 12v 10v v ge =8v t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 1 10 100 ic , collector current [a] v ce , g ate to em itter voltage[v] common emitter v ce = 20v t c = 25 o c t c = 125 o c 200 25 50 75 100 125 0.4 0.8 1.2 1.6 2.0 2.4 120a 50a 25a i c = 12.5a comm on emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 1 2 3 4 5 6 common emitter t c = 25 o c collector - emitter voltage, v ce [v] g a te - e m itte r v o lta g e , v ge [v ] 12.5a 25a 50a 120a
5 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt typical performance characteristics (continued) figure 7. saturation voltage vs. v ge figure 8. capacitance charaacteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. gate figure 12. turn-o f f c h a r a c t e r i s t i c s v s . g a t e resistance resistance 4 8 12 16 20 0 1 2 3 4 5 6 gate - emitter voltage, v ge [v ] collector - emitter voltage, v ce [v] com mon emitter t c = 125 o c 12.5a 25a 50a 120a 0.1 1 10 0 1000 2000 3000 4000 5000 comm on emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 30 60 90 120 150 0 2 4 6 8 10 12 14 common emitter r l = 8 ? t c = 25 o c vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.1 1 10 100 1000 50 s 100 s dc operation 1ms ic max (continuous) ic max (pulsed) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 25a t c = 25 o c t c = 125 o c td(on) tr switching time [ns] gate resistance, r g [ ? ] 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 25a t c = 25 o c t c = 125 o c td(off) tf switching time [ns] gate resistance, r g [ ? ]
6 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt typical performance characteristics (continued) figure 13. turn-on characteristics vs. figure 14.turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current 0 20 40 60 80 100 120 10 100 1000 common emitter v cc = 200v, v ge = 15v r g = 8.7 ? t c = 25 o c t c = 125 o c tr td(on) switching time [ns] collector current, i c [a] 0 20 40 60 80 100 120 10 100 1000 tf common emitter v cc = 200v,v ge = 15v r g =8.7 ? t c = 25 o c t c = 125 o c switching time [ns] collector current, i c [a] td(off) 0 1020304050 0.1 1 eoff common emitter v cc = 200v, v ge = 15v i d =25a t c = 25 o c t c = 125 o c eon switching loss [mj] gate resistance, r g [ ? ] 0 20 40 60 80 100 120 0.1 1 10 common emitter v cc = 200v,v ge = 15v r g = 5 ? t c = 25 o c t c = 125 o c eon eoff switching loss [mj] collector current, i c [a] figure 17. turn-off soa figure 1 10 100 1000 10 100 1000 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v]
7 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt typical performance characteristics (continued) figure 18. transient thermal impedance of igbt figure 19. forward characteristics figure 20. typical reverse recovery curr ent figure 21. typical reverse recovery time 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 t c = 25 o c t c = 125 o c t j = 125 o c t j = 25 o c forward current , i f [a] forward voltage , v f [v] 100 500 0 1 2 3 4 5 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 100 500 24 28 32 36 i f = 10a tc = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
8 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt mechanical dimensions to-3p 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?0.05 0.60 +0.15 ?0.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ]
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 9 www.fairchildsemi.com fga120n30d rev. b fga120n30d 300v pdp igbt disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reli ability, function or design. fai rchild does not assume any liability arising out of the application or use of any pr oduct or circuit described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. these specifications do not expand the terms of fairchild?s worldwide terms a nd conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose fail ure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains th e design specifications for product development. specifications may change in any manner without notice. preliminary first production this data sheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i19 fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? mserdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fga120n30d 300v pdp igbt general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support employing unified igbt technology, fga120n30d provides low conduction and switching loss. fga120n30d offers the optimum solution for pdp applications where low condution loss is essential. z high current capability z low saturation voltage: v ce(sat) , typ = 1.1v@ i c = 25a z high input impedance datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** FGA120N30DTU full production $4.74 to - 3p 3 rail line 1: $y (fairchild logo) line 2: fga120n30d line 3: &3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/ n fga120n30d - 300v pdp igbt 17-au g -2007 mhtml:file://c:\te mp\FGA120N30DTU.mht
back to top qualification support click on a product for detailed qualification data back to top indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fga120n30d is available. click here for more information . product FGA120N30DTU ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/ n fga120n30d - 300v pdp igbt 17-au g -2007 mhtml:file://c:\te mp\FGA120N30DTU.mht

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