sfh 320 sfh 320 fa npn-silizium-fototransi stor im smt topled ? -geh?use silicon npn phototransistor in smt topled ? -package lead (pb) free produc t - rohs compliant sfh 320 sfh 320 fa 2007-05-10 1 wesentliche merkmale ? speziell geeignet fr anwendungen im bereich von 450 nm bis 1150 nm (sfh 320) und 750 nm bis 1120 n (sfh 320 fa) hohe linearit?t p-lcc-2 geh?use gruppiert lieferbar fr alle l?tverfahren geeignet. anwendungen miniaturlichtschranken fr gleich- und wechsellichtbetrieb industrieelektronik ?messen/steuern/regeln? typ type bestellnummer ordering code fotostrom , (e e =0,1mw/cm 2 , =950nm v ce = 5 v) photocurrent ipce ( a) sfh 320 q65110a2471 > 16 sfh 320-3 q65110a2469 25-50 sfh 320-3/-4 q65110a1781 25-80 sfh 320-4 q65110a2510 40-80 sfh 320 fa q65110a2472 > 16 sfh 320 fa-3 q65110a2470 25-50 sfh 320 fa-3/-4 q65110a2475 25-80 sfh 320 fa-4 q65110a1836 40-80 features especially suitable for applications from 450 nm to 1150 nm (sfh 320) and 750 nm to 1120 nm (sfh 320 fa) high linearity p-lcc-2 package available in groups suitable for all soldering methods. applications miniature photointerrupters industrial electronics for control and drive circuits
2007-05-10 2 sfh 320, sfh 320 fa grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 ? + 100 c kollektor-emitterspannung collector-emitter voltage v ce 35 v kollektorstrom collector current i c 15 ma kollektorspitzenstrom, < 10 s collector surge current i cs 75 ma verlustleistung, t a = 25 c total power dissipation p tot 165 mw w?rmewiderstand fr montage auf pc-board thermal resistance for mounting on pcb r thja 450 k/w
sfh 320, sfh 320 fa 2007-05-10 3 kennwerte ( t a = 25 c, = 950 nm) characteristics bezeichnung parameter symbol symbol wert value einheit unit sfh 320 sfh 320 fa wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max 980 980 nm spektraler bereich der fotoempfindlichkeit s = 10% von s max spectral range of sensitivity s = 10% of s max 450 ? 1150 750 ? 1120 nm bestrahlungsempfindliche fl?che (? 220 m) radiant sensitive area a 0.038 0.038 mm 2 abmessung der chipfl?che dimensions of chip area l b l w 0.45 0.45 0.45 0.45 mm m m halbwinkel half angle ? 60 60 grad deg. kapazit?t, v ce = 0 v, f = 1 mhz, e = 0 capacitance c ce 5.0 5.0 pf dunkelstrom dark current v ce = 20 v, e = 0 i ceo 1 ( 50) 1 ( 50) na
2007-05-10 4 sfh 320, sfh 320 fa directional characteristics s rel = f ( ? ) die fototransistoren werden nach ihrer fotoemp findlichkeit gruppiert und mit arabischen ziffern gekennzeichnet. the phototransistors are grouped according to thei r spectral sensitivity and distinguished by arabian figures. bezeichnung parameter symbol symbol wert value einheit unit sfh 320 /fa -2 -3 -4 fotostrom, = 950 nm photocurrent e e = 0.1 mw/cm 2 , v ce = 5 v sfh 320: e v = 1000 ix, normlicht/standard light a, v ce = 5 v i pce i pce 16 ? 16 ? 32 420 25 ? 50 650 40 ? 80 1000 a a anstiegszeit/abfallzeit rise and fall time i c = 1 ma, v cc = 5 v, r l = 1 k ? t r , t f 7678 s kollektor-emitter-s?ttigungsspannung collector-emitter saturation voltage i c = i pcemin 1) 0.3, e e = 0.1 mw/cm 2 v cesat 150 150 150 150 mv 1) i pcemin ist der minimale fotostro m der jeweiligen gruppe. 1) i pcemin is the min. photocurrent of the specified group. ohf01402 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 0
sfh 320, sfh 320 fa 2007-05-10 5 relative spectral sensitivity , sfh 320 s rel = f ( ) total power dissipation p tot = f ( t a ) dark current i ceo = f ( t a ), v ce = 5 v , e = 0 0 ohf00207 400 s rel nm % 500 600 700 800 900 1100 10 20 30 40 50 60 70 80 100 ohf00871 tot p 0 0 40 80 120 160 mw 200 20 40 60 80 ?c 100 t a t ohf01530 a ceo -1 10 10 0 10 1 10 2 10 3 -25 na 0 25 50 75 100 ?c relative spectral sensitivity , sfh 320 fa s rel = f ( ) photocurrent i pce = f ( v ce ), e e = parameter capacitance c ce = f ( v ce ), f = 1 mhz, e = 0 ohf00468 0 rel s 400 20 40 60 80 % 100 nm 500 600 700 800 900 1100 v ohf01529 ce pce 0 0 10 10 -2 10 -1 ma v 5 10 15 20 25 30 35 mw cm 2 0.1 0.25 2 cm mw 0.5 2 cm mw 1 2 cm mw v ohf01528 ce -2 10 ce c 10 -1 10 0 10 1 10 2 0 v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pf photocurrent i pce = f ( e e ), v ce = 5 v dark current i ceo = f ( v ce ), e = 0 photocurrent i pce / i pce25 o = f ( t a ), v ce = 5 v e ohf01924 e pce 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 2 mw/cm 2 3 4 a v ohf01527 ce ceo -3 10 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 v na t ohf01524 a 0 -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 pce pce 25 c
2007-05-10 6 sfh 320, sfh 320 fa ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). empfohlenes l?tpaddesign recommended solderpad design ma?e in mm (inch) / dimensions in mm (inch). gply6030 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.12 (0.005) 0.18 (0.007) 0.5 (0.020) 1.1 (0.043) 3.3 (0.130) 3.7 (0.146) 0.4 (0.016) 0.6 (0.024) 2.6 (0.102) 3.0 (0.118) 2.1 (0.083) 2.3 (0.091) collector marking 3.0 (0.118) 3.4 (0.134) (2.4) (0.095) 0.1 (0.004) (typ.) 4?1 ohlpy970 4.5 (0.177) 2.6 (0.102) 1.5 (0.059) cu-area > 16 mm cu-fl?che > 16 mm 2 2 solder resist l?tstopplack 4.5 (0.177) 1.5 (0.059) 2.6 (0.102) padgeometrie fr improved heat dissipation verbesserte w?rmeableitung paddesign for
sfh 320, sfh 320 fa 2007-05-10 7 l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 reflow l?tprofil fr bleifreies l?ten (nach j-std-020c) reflow soldering profile for lead free soldering (acc. to j-std-020c) wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) ohla0687 0 0 t t ?c s 120 s max 50 100 150 200 250 300 ramp up 100 s max 50 100 150 200 250 300 ramp down 6 k/s (max) 3 k/s (max) 25 ?c 30 s max 260 ?c +0 ?c -5 ?c 245 ?c 5 ?c 240 ?c 255 ?c 217 ?c maximum solder profile recommended solder profile 235 ?c -0 ?c +5 ?c minimum solder profile 10 s min ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
2007-05-10 8 sfh 320, sfh 320 fa published by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. y ou must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be im planted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered.
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