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Datasheet File OCR Text: |
unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max BAP70-03 features high voltage, current controlled rf resistor forattenuators low diode capacitance very low series inductance. absolute maximum ratings ta = 25 parameter symbol min max unit continuous reverse voltage v r 50 v continuous forward current i f 100 ma total power dissipation ts = 90 p tot 500 mw storage temperature t stg -65 +150 junction temperature t j -65 +150 thermal resistance from junction to soldering point r th j-s 120 k/w electrical characteristics ta = 25 parameter symbol conditions typ max unit forward voltage v f i f = 50 ma 0.95 1.1 v reverse leakage current i r v r = 30 v 20 na v r =0;f=1mhz 570 v r = 1 v; f = 1 mhz 400 v r = 5 v; f = 1 mhz 270 v r = 20v; f = 1 mhz 200 250 i f = 0.5 ma; f = 100 mhz 77 100 i f =1ma;f=100mhz 40 50 i f = 10 ma; f = 100 mhz 5.4 7 i f = 100 ma; f = 100 mhz 1.4 1.9 when switched from i f =10matoi r =6ma; r l = 100 ;measured at i r =3ma series inductance l s i f = 100 ma; f = 100 mhz 1.5 nh ff diode capacitance c d r d diode forward resistance s l charge carrier life time 1.25 marking marking a9 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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