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  high t vol t a g e f a s t r e cov e r y diode DHM3UF80 f e a t u r e s o u t l i n e d r a w i n g ? for high re solution displays and tv receivers. unit in mm(inch) w eight: 0.18 (g) direction of polar ity 6.5 (0.256) cathode band (red) lot mar k (green) 28min. (1.102) 28min. (1.102) (0.098) (0.02) 0.5 2.5 symbol band (green) cab ? dif f used-ju nction. ? excellent high temperat ur e output characteristics ( small leakage curren t at high temperatur e and excellent revers e characteristics ) absolut e maximum ra tings item t y pe dhm3uf8 0 repetitiv e pea k reverse v o ltage * v rrm k v 8 non-r e p e titive peak revers e v o lt age* v rs m k v 1 0 1 ( 100 khz c- loa d ) a v erag e f o r w a r d current i f(a v ) m a 3 ( 15.75khz c - loa d ) surge(n on-r e petitive) f o r w a r d current i fsm a 0 . 5 operatin g junc tion t e mperatu r e t j c -40 ~ + 120 s t orage t e mpe r ature t st g c -40 ~ + 120 charact e ristics (t c =25c unless otherwise specified) item symbols unit s min. ty p . max. t e st conditio n s peak rev e rse current* i rrm a - - 2 . 0 v r = v rrm peak f o r w ar d v o lt age v fm v - - 2 3 i fm = 5 m ap reverse recover y t i me trr ns - - 40 i f = 2 m a, i rp = 5 m a, 1ma recover y notes *diode tested in adequat e ther mal an d dielectric medium. reve rse recover y time (trr) test circuit 0 t 1ma trr i f =2ma i rp =5ma 22 s 220 s d.u.t. scope 150k ? 100 ? 1k ? 0 to 400v (approx.) 0.01 f i f pde- dhm3 u f8 0 - 1
hit achi power semiconduct ors ? f o r inquiri es relatin g to the prod uct s , pleas e cont act near est overseas r epres ent atives w h ich is l o cate d ?inquir y ? port i on o n the top p age of a hom e p a g e . 1. the infor m ation given herein, including th e s pecifications and d i mensions, is subject t o change without prior notice to improve pro duct chara c teristics. b e fore ordering, purchasers are advised to cont act hit a chi sales dep artment for the latest version of this dat a sheet s. 2. please b e sure to r ead "precautions for safe use and notices" in the in dividual brochure be fore use. 3. in cases where extremely high reliability is required (su c h as use in nuclear p o wer control, ae rosp ace a nd aviation , traf fic e quipment, life-support-r e lated medical equipment, fuel control e quipment and various kinds of safet y equipment ), safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail- safe precautions or other arrangement. or consult hit a chi? s sales dep art m e n t st af f. 4. in no event shall hit a chi be liable for any damages that may result from an accident or any other cause during operation of the user ? s unit s according to th is dat a she e t s . hit a chi assumes no responsib ility for any intellectua l property claims or an y other problems that ma y result from applications of inf o rmation, product s or circuit s describ ed in this dat a sheet s. 5. in no event shall hit a chi be liable for any failure in a semiconductor device o r any secondary damage resulting from use at a value exceeding the absolute maximu m rating. 6. no licen se is grant ed by this dat a sheet s und er any p a tent s or other right s of any third p a rty or hit a chi, lt d. 7. this d a t a sheet s may not be repr oduced or d uplicated, in any form, in whole or in p a rt , without the expressed written permission of hit a chi, lt d. 8. the prod uct s (techno logies) described in this dat a sheet s are not to b e provided t o any p a rty whose purpose in their applica t ion will hin der mainten ance of inte rnational pe ac e and safety not are they to be applied to tha t p u rpose by t heir dire ct p u rchasers o r any third p a rty . when exporting these p r oduct s (technologies), the necessa ry procedures are to be t a ken in accord ance with re lated laws a nd regulatio notices ns. hit a chi power semiconductor home p age addr ess http://www .hit achi.co.jp/p se


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