s m d ty p e i c s m d ty p e t r a n s i s t o r s fmw 3 features high breakdow n voltage p ow er diss ipation: p c =300mw collector curren : i c =50ma absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo 120 v collector-em itt er voltage v ceo 120 v em itt er-base voltage v ebo 5.0 v collector curr ent -continuo us i c 50 m a collector pow er dissipati on( tot al ) p c 300 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 ele ctric al characteristics t a = 25 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo 120 v collector-to-e m itt er bre akdow n voltage v (br)ceo 120 v em itt er-to- base breakdow n voltage v (br)ebo 5.0 v collector cut off current ic bo v cb = 100 v , i e =0 0.5 a collector cut off current i ebo v ce = 4.0v , i c =0 0.5 a dc curre nt gain h fe v ce = 60v, i c = 2.0m a 180 820 collector-emit ter sat uration vo ltage v ce(sat) i c =10 m a, i b = 1.0m a 0.5 v transition frequency f t v ce = 12v, i c = 2m a,f =100m hz 140 mh z 1 23 4 5 unit: mm ic = 50a, e ic = 1 m a i b =0 i e = 50 a i c =0 i =0 FMW3 mark ing mar king w3 sales@twtysemi.com 1 of 1 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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