power module 1 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family features applications ? ultra low loss ? high ruggedness ? high short circuit capability ? positive temperature coeffcient ? motor drives ? inverter ? converter ? smps and ups ? welder ? induction heating absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage 600 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 460 a t c =50c 400 a i cpuls pulsed collector current t c =25c, t p =1ms 920 a t c =50c, t p =1ms 800 a p tot power dissipation per igbt 1400 w free-wheeling diode v rrm repetitive reverse voltage 600 v i f(av) average forward current t c =25c 400 a t c =50c 320 a i f(rm s ) rms forward current 570 a i fsm non-repetitive surge forward current t vj =45c, t=10ms, sine 1200 a t vj =45c, t=8.3ms, sine 1320 a module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t vj max) max. junction temperature 150 c t vj op operating temperature -40 150 c t stg storage temperature range -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index module case exposed to 0.1% ammonium chloride solution per ul and iec standards 350 v r thjc junction-to-case thermal resistance per igbt 0.09 k/w r thjcd junction-to-case thermal resistance per inverse diode 0.15 k/w torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m6) 2.5 5 nm weight 310 g life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06400D-BN1MM series 400a dual igbt rohs agency agency file number e71639 agency approvals
power module 2 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =8ma 4.5 5.5 6.5 v v ce(sat) collector - emitter saturation voltage i c =400a, v ge =15v, t vj =25c 1.95 2.45 v i c =400a, v ge =15v, t vj =125c 2.2 v i ces collector leakage current v ce =600v, v ge =0v, t vj =25c 1 ma v ce =600v, v ge =0v, t vj =125c 2 ma i ges gate leakage current v ce =0v, v ge =20v 1. 2 1. 2 a r gint intergrated gate resistor 2.5 q ge gate charge v ce =300v, i c =400a , v ge =15v 1. 8 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 18 nf c oes output capacitance 1. 8 nf c res reverse transfer capacitance 1. 6 nf t d(on) turn - on delay time v cc =300v i c =400a r g =3 v ge =15v inductive load t vj =25c 195 ns t vj =125c 220 ns t r rise time t vj =25c 65 ns t vj =125c 80 ns t d(off) turn - off delay time t vj =25c 295 ns t vj =125c 350 ns t f fall time t vj =25c 45 ns t vj =125c 60 ns e on turn - on energy t vj =25c 6.5 mj t vj =125c 10 mj e off turn - off energy t vj =25c 9.5 mj t vj =125c 14.5 mj free-wheeling diode v f forward voltage i f =400a , v ge =0v,t vj =125c 1.25 1. 6 v i f =400a , v ge =0v, t vj =125c 1. 2 v t rr reverse recovery time i f =400a , v r =300v 249 ns i rrm reverse recovery charge d if /dt=-2000a/s 214 a q rr reverse recovery charge t j =125c 31 c electrical characteristics (t c = 25c, unless otherwise specifed)
power module 3 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family figure 1: typical output characteristics 820 700 560 i c (a) 5 7 k $ 420 v ce(sat) ?v? 5 7 k $ 280 140 0 0 1 1.5 2.5 3.5 2 3 0.5 figure 2: typical transfer characteristics 36 e on e of f (mj) 30 24 18 12 6 0 120 360 i c ?a? 7 $ $ 7 3 ( p i n 7 ( & 7 5 7 k $ & p o & p g g 840 720 600 480 240 0 36 30 12 24 6 0 03 6 91 2 15 18 e on e of f (mj) & p o & p g g r g ?ohm ? 21 7 $ $ 7 * $ " 7 ( & 7 5 7 k $ 18 figure 4: switching energy vs. gate resistor t (ns) 100 0 80 240 i c ?a? 7 $ $ 7 3 ( p i n 7 ( & 7 5 7 k $ u e p g g
u g u s u e p o
560 480 400 320 160 10 100 0 figure 5: switching times vs. collector current figure 6: switching times vs. gate resistor u e p o
u e p g g
100 0 10 7 $ $ 7 * $ " 7 ( & 7 5 7 k $ t (ns) u s u g 100 02 4 68 10 12 r g ?ohm ? 14 820 7 $ & 7 700 560 i c (a) 420 280 5 7 k $ 5 7 k $ 140 0 0 v ge ?v? 14 24 68 10 12 figure 3: switching energy vs. collector current
power module 4 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family figure 7: diode forw ard characteristics v ge (v) q g ?nc ? 0 0 20 25 10 15 5 400 800 1200 1600 2000 7 $ $ 7 * $ " 5 7 k $ c (nf) v ce ?v? 30 25 20 15 7 ( & 7 g . ) [ $ j f t $ s f t 0.1 1 0 51 0 $ p f t 100 10 35 figure 8: typical capacitances vs. v ce 0 0 100 300 v ce ?v? 700 200 400 500 60 0 i c p uls ( a ) 5 7 k $ 5 $ $ 7 ( & 7 1000 800 600 400 200 1200 figure 9: reverse biased saf e operating area 0 01 00 200 300 400 500 600 v ce ?v? 700 2000 2400 1600 120 i 0 800 400 csc (a) 5 7 k $ 5 $ $ 7 ( & 7 u t d 0 t figure 10: short cir cuit safe operating area t c case te mperature(c) i c ( a ) 5 7 k $ 7 ( & 1 7 0 25 0 300 200 100 500 400 50 75 125 100 150 600 175 figure 11: rated cur rent vs. t c 5 7 k $ 5 7 k $ 820 700 560 420 i f (a) 280 140 0 v ?v? 03 3.5 2.5 2.0 1. 51.0 0.5 figure12: diode forward characteristics
power module 5 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family figure 13: tr ansient thermal impedance of igbt 10 -1 10 -2 10 -3 1 10 -1 10 -2 10 -3 10 -4 10 -4 % v u z 4 j o h m f 1 v m t f z thjc (k/w) 1 rectangular pulse duration (seconds) figure 14:transient thermal impedance of diode 10 -4 10 -4 10 -3 10 -3 10 -2 10 -2 10 -1 10 -1 1 1 % v u z 4 j o h m f 1 v m t f z thjc (k/w) rectangular pulse duration (seconds) dimensions-package d circuit diagram and pin assignment
power module 6 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN1MM 600v igbt family packing options part number marking weight packing mode m.o.q MG06400D-BN1MM MG06400D-BN1MM 310g bulk pack 30 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type MG06400D-BN1MM voltage rating current rating assembly site 06: 600v 400: 400a d: package d b: 2x(igbt+fwd)
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