irf9240 irf9240?sm semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v dss drain ? source voltage v dgr drain ? gate voltage (r gs = 20k w ) v gs gate ? source voltage i d continuous drain current @ t case = 25c @ t case = 100c i dm pulsed drain current p d max. power dissipation @ t case = 25c linear derating factor (to 3 package only) i lm inductive current , clamped t j operating junction and t stg storage temperature range ?200v ?200v 20v ?11a ?7.0a ?44a 125w 1w / c ?44a ?55 to 150c mechanical data dimensions in mm (inches) 13 2 0.25 3.0 11.5 2.0 3.5 3.5 4.6 1.5 15.8 9.0 8.5 p ? channel power mosfet to ? 3 ? to ? 3 (to ? 204aa) metal package to ? 220 sm ? to ? 220 ceramic surface mount package absolute maximum ratings (t case = 25 c unless otherwise stated) prelim. 1/94 d g s (to 3 package only) 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 0.97 (0.060) 1.10 (0.043) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) pin 1 ? gate to ? 220 sm pin 2 ? source pin 3 ? drain pin 1 ? gate to ? 3 package pin 2 ? source pin 3 ? drain features p ? channel power mosfet high voltage integral protection diode available in to-3 (to-204aa) and ceramic surface mount packages note: irfnxxxx also available with pins 1 and 3 reversed.
irf9240 irf9240 ? sm semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk characteristic test conditions min. typ. max. unit ? 200 ? 2 ? 4 ? 100 100 ? 250 ? 1000 ? 11 0.35 0.5 46 1100 1300 375 450 150 250 70 90 55 15 20 30 10 15 12 18 812 5.0 12.5 drain ? source breakdown voltage gate threshold voltage gate ? source leakage current (forward) gate ? source leakage current (reverse) zero gate voltage drain current on state drain current 1 static drain ? source on-state resistance forward transconductance 1 input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain ( ? miller ? ) charge turn ? on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance characteristic min. typ. max. unit 1.0 0.1 30 300 r q jc r q cs r q ja t l junction to case (to-3 package only) case to sink (to-3 package only) junction to ambient max. lead temperature 0.063 ? from case for 10 sec. (to-3 package only) c/w c/w c/w c thermal characteristics characteristic test conditions min. typ. max. unit ? 11 ? 44 ? 4.6 270 2.0 i s i sm v sd t rr q rr v gs = 0v , i s = ? 11a t case = 25 c i f = ? 11a , dl f / dt = 100a/ m s t j = 150 c i f = ? 11a , dl f / dt = 100a/ m s t j = 150 c continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c source ? drain diode ratings and characteristics bv dss v gs(th) i gss i dss i d(on) r ds(on) g fs c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f l d l s v gs = 0v , i d = ? 250 m a v ds = v gs , i d = ? 250 m a v gs = ? 20v v gs = 20v v ds = max. rating , v gs = 0v v ds = 0.8 x max. rating v gs = 0v , t case = 125 c v ds > i d(on) x r ds(on) max v gs = ? 10v v gs = ? 10v , i d = ? 6a v ds > i d(on) x r ds(on) max i d = ? 6a v gs = 0v v ds = ? 25v f = 1mhz v gs = ? 15v i d = ? 22a v ds = 0.8 x max. rating v dd = 0.5 x bv dss i d = ? 6a z o = 4.7 w v v na na m a m a a w s pf nc ns nh nh 1) pulse test: pulse width < 300 m s , duty cycle 2% 2) repetitive rating: pulse width limited by maximum junction temperature. electrical ratings (t case = 25 c unless otherwise stated) prelim. 1/94
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