september 2011 doc id 17029 rev 4 1/9 9 T3035H, t3050h snubberless? high temperature 30 a triacs features high current triac high immunity level low thermal resistance with clip bounding rohs (2002/95/ec) compliant package very high commutation (3q) at 150 c capability ul certified (ref. file e81734) applications thanks to its high electrical noise immunity level and its strong current robustness, the t30xxh series is designed for the control of ac actuators in appliances and industrial systems. description specifically designed to operate at 150 c, the new 30 a t30xxh triacs provide very high dynamic performance and enhanced performance in terms of power loss and thermal dissipation. this allows optimizing the heatsink size, leading to space and cost effectiveness when compared to electro-mechanical solutions. based on st snubberless? technology, they offer a specified minimal commutation and high noise immunity levels valid up to the t j max. the t30xxh series optimize safely the control of universal motors and of inductive loads found in power tools and major appliances. by using an internal ceramic pad, the t30xxh-6i provides voltage insulation (rated at 2500 v rms). tm : snubberless is a trademark of stmicroelectronics table 1. device summary symbol value i t(rms) 30 a v drm /v rrm 600 v i gt 35 or 50 ma g a2 a2 a1 g a2 a1 a2 a1 g to-220ab (t30xxh-6t) to-220ab insulated (t30xxh-6l) www.st.com
characteristics T3035H t3050h 2/9 doc id 17029 rev 4 1 characteristics table 2. absolute maximum rating symbol parameter value unit i t(rms) on-state rms current (full sine wave) to-220ab t c = 121 c 30 a to-220ab insul. t c = 92 c i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25 c) f = 50 hz t = 20 ms 270 a f = 60 hz t = 16.7 ms 284 i 2 ti 2 t value for fusing t p = 10 ms 487 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , t r 100 ns f = 120 hz t j = 150 c 50 a/s v dsm / v rsm non repetitive surge peak off-state volt-age t p = 10 s t j = 25 c v dsm /v rsm +100 v i gm peak gate current t p = 20 s t j = 150 c 4 a p g(av) average gate power dissipation t j = 150 c 1 w t stg t j storage junction temperature range operating junction temperature range -40 to +150 -40 to +150 c table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit T3035H t3050h i gt (1) 1. minimum i gt is guaranted at 20 % of i gt max. v d = 12 v r l = 33 i - ii - iii max. 35 50 ma v gt i - ii - iii max. 1.0 v v gd v d = v drm r l = 3.3 k i - ii - iii min. 0.15 v i h (2) 2. for both polarities of a2 referenced to a1. i t = 500 ma max. 60 75 ma i l i g = 1.2 i gt i - iii max. 75 90 ma ii 90 110 dv/dt (2) v d = 67 %v drm gate open t j = 150 c min. 1000 1500 v/s (di/dt)c (2) without snubber t j = 150 c min. 33 44 a/ms
T3035H t3050h characteristics doc id 17029 rev 4 3/9 table 4. static characteristics symbol test conditions value unit v tm (1) i tm = 42 a t p = 380 s t j = 25 c max. 1.55 v v to (1) threshold voltage t j = 150 c max. 0.85 v r d (1) dynamic resistance t j = 150 c max. 15 m i drm i rrm v drm = v rrm t j = 25 c max. 10 a t j = 150 c 8.5 ma v d /v r = 400v (at peak mains voltage) t j = 150 c max. 7 v d /v r = 200v (at peak mains voltage) t j = 150 c 5.5 1. for both polarities of a2 referenced to a1. table 5. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) to-220ab 0.8 c/w to-220ab insul 1.6 r th(j-a) junction to ambient to-220ab / to-220ab insul 60 c/w figure 1. maximum power dissipation versus rms on-state current (full cycle 180) figure 2. on-state rms current vs case temperature 0 5 10 15 20 25 30 35 40 0510 15 20 25 30 p(w) i (a) t(rms) i (a) t(rms) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 15 0 t (c) c to-220ab- ins to-220ab
characteristics T3035H t3050h 4/9 doc id 17029 rev 4 figure 3. on-state rms current versus ambient temperature (free air convection) figure 4. relative variation of thermal impedance versus pulse duration i (a) t(rms) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 t (c) a k = [z / r ] th th 1.0e-02 1.0e-01 1.0e+00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 t (s) p z th(j-c) z th(j-a) figure 5. relative variation of gate trigger current and gate trigger voltage versus junction temperature figure 6. relative variation of holding current and latching current vs junction temperature (typical value) i , v [t ] / i , v [t = 25 c] gt gt j gt gt j 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 iq3 gt i q1-q2 gt v q1-q2-q3 gt t (c) j typical value 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 i , i [t ] / i , i [t = 25 c] hl j hl j 50 75 100 125 150 t (c) j i h i l figure 7. surge peak on-state current vs number of cycles figure 8. non repetitive surge peak on-state current for a sinusoidal pulse i (a) tms 0 50 100 150 200 250 1 10 100 1000 one cycle t = 20 ms number of cycles non repetitive t initial = 25 c j repetitive t = 121 c c i (a), i2t (a2s) tsm 10 100 1000 10000 0.01 0.10 1.00 10.00 width t < 10 ms, and corresponding value of i2t p t (ms) tj initial = 25 c i2t i tsm dl/dt limitation: 50 a/s
T3035H t3050h characteristics doc id 17029 rev 4 5/9 figure 13. acceptable junction to ambient thermal resistance vs repetitive peak off-state voltage and ambient temperature figure 9. on state characteristics (maximum values) figure 10. relative variation of critical rate of decrease of main current vs junction temeprature i (a) tm 1 10 100 1000 0123 1 10 100 1000 012345 t max: v = 0.85 v r = 15 m j to d v (v) tm t = 150 c j t = 25 c j 0 1 2 3 4 5 6 7 8 9 10 11 25 50 75 100 125 150 t (c) j (di/dt) [t ]/(di/dt) [t = 150 c] cj cj figure 11. relative variation of static dv/dt immunity vs junction temperature figure 12. relative variation of leakage current vs junction temperature for different values of blocking voltage 0 1 2 3 4 5 6 7 8 9 10 11 25 50 75 100 125 150 dv/dt[t ]/dv/dt[t = 150 c] jj v = v = 400 v dr t (c) j 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 150 t (c) j i/i[t;v/v]/i/i drm rrm j drm rrm drm rrm [t = 150 c; 600 v] j v = v = 200 v drm rrm v = v = 400 v drm rrm v = v = 600 v drm rrm r (c/w) th(j-a) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 20 30 40 50 60 70 80 90 100 110 120 130 140 ta(c) voltage and ambient temperature v=v=600v drm rrm v = v = 200 v drm rrm v = v = 400 v drm rrm
package information T3035H t3050h 6/9 doc id 17029 rev 4 2 package information epoxy meets ul94, v0 recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. to-220ab (nins. and ins. 20-up) dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m2.60 0.102 c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m
T3035H t3050h ordering information scheme doc id 17029 rev 4 7/9 3 ordering information scheme figure 14. ordering information scheme t 30 35 h - 6 t triac series current sensitivity high temperature voltage in arms 35 : 35 ma 50 : 50 ma 6 : 600 v package t = to-220ab i = to-220ab ins
ordering information T3035H t3050h 8/9 doc id 17029 rev 4 4 ordering information 5 revision history table 7. ordering information order code marking package weight base qty delivery mode T3035H-6t T3035H 6t to-220ab 2.3 g 50 tube t3050h-6t t3050h 6t T3035H-6i T3035H 6i to-220ab insulated t3050h-6i t3050h 6i table 8. document revision history date revision changes 28-jan-2010 1 initial release. 17-may-2010 2 updated maximum t j in ta bl e 2 . 14-dec-2010 3 updated i gt in ta b l e 1 . 20-sep-2011 4 updated : features .
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