advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 6.5m fast switching characteristic i d 66a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a 62.5 /w data & specifications subject to change without notice total power dissipation 3 2 storage temperature range operating junction temperature range -55 to 150 -55 to 150 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 3 201305171 1 total power dissipation gate-source voltage + 20 continuous drain current, v gs @ 10v 66 continuous drain current, v gs @ 10v 42 pulsed drain current 1 parameter rating drain-source voltage 30 a p83t03agh-hf 50 halogen-free product 160 g d s to-252(h) g d s a p83t03a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =40a - - 6.5 m v gs =4.5v, i d =30a - - 9.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =40a - 60 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 14 22.4 nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 8 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =40a - 85 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =10v - 4.5 - ns c iss input capacitance v gs =0v - 1080 1728 pf c oss output capacitance v ds =25v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 21 - ns q rr reverse recovery charge di/dt=100a/s - 7 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board AP83T03AGH-HF r ds(on) static drain-source on-resistance 2
a p83t03agh-h f fig 1. typical output characteristics fig 2. typical output characteristics + 20 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 200 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap83t03agh-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics + 20 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =24v 0 400 800 1200 1600 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 20 40 60 80 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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