NTE6232 powerblock module description : the NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. this device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required. features : standard voltage electrically isolated base plate 3500v rms isolating voltage high surge capability large creepage distances ratings and characteristics : average forward current (t c = +92 c, 180 conduction, half sine wave), i f(av) 100a . . . . . . . . . . maximum rms on?state current, i t(rms) 141a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum repetitive peak reverse and off?state blocking voltage, v rrm , v drm 1600v . . . . . . . . maximum non?repetitive peak reverse voltage, v rsm 1700v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum peak reverse current (t j = +125 c), i rrm 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rms isolation voltage (50hz, circuit to base, all terminals shorted, t = 1s), v iso 3500v . . . . . . . . operating junction temperature range, t j ?40 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?40 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction?to?case (per module, dc operation), r thjc 0.22 c/w . . . . . . . . . . . thermal resistance, case?to?sink (note 1), r thcs 0.1 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. mounting surface flat, smooth and greased. electrical specifications: parameter symbol test conditions rating unit maximum peak one?cycle i fsm t = 10ms sinusoidal half wave, 100% v rrm c 1780 a t = 10ms sinusoidal half wave, no voltage c 2110 a
electrical specifications (cont?d): parameter symbol test conditions rating unit maximum i 2 t for fusing i 2 t t = 10ms sinusoidal half wave, 100% v rrm c 13190 a 2 s t = 10ms sinusoidal half wave, no voltage c 18650 a 2 s maximum i 2 t i 2 t t = 0.1 to 10ms, no voltage reapplied 204300 a 2 t threshold voltage, low level v f(to)1 t j = +150 c, (16.7% x x i t(av) < i < x i t(av) ) 0.66 v threshold voltage, high level v f(to)2 t j = +150 c, ( x i t(av) < i < 20 x x i t(av) ) 0.74 v forward slope resistance, low level r f1 t j = +150 c, (16.7% x x i t(av) < i < x i t(av) ) 1.81 m ? forward slope resistance, high level r f2 t j = +150 c, ( x i t(av) < i < 20 x x i t(av) ) 1.57 m ? maximum forward voltage drop v fm t j = +25 c, i fm = x i f(av) , av. power = v f(to) x i t(av) + r f x (i f(rms) ) 2 1.3 v circuit diagram ac + ? 3.150 (80.0) 3.620 (91.9) .244 (6.2) dia .110 (.028) x .036 (.009) faston terminals 1.195 (30.0) 1.180 (30.0) .787 (20.0) .500 (12.7) .393 (10.0) .787 (20.0) .550 (14.0) .787 (20.0) .590 (15.0) m5 screw (3 places) ac g2 k2 k1 g1 + ?
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