infrared led chip gaas/gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.3 1.45 v if=20ma reverse voltag e 8v ir=10ua power a 1.05 1.13 b 1.13 1.21 c 1.21 1.28 d 1.28 1.36 e 1.36 1.44 f 1.44 1.52 g 1.52 1.59 g1 1.59 1.69 940 nm if=20ma 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area ---------------------------- - 7mil x 7mil (b) bottom area ---------------------------- - 8mil x 8mil (c) bonding pad ---------------------------- - 100um (d) chip thickness ------------------------------- 9.0mil (8mil available) (e) junction height ------------------------------- 4.7mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. if=20ma po mw wavelength ? p OPA9420AL v r v f symbol (e) (d) substrate (c) (a) (b)
|
