sep.2000 j k w 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v v v 10. 11. 12. 13. 14. 15. 16. uu v v w w wpc upi vpi wpi nc ni pn p p n n upc f o v vpc 17. 18. 19. v v cc s i gnd gnd out upi v u fo up upc f o in v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in v v fo v v fo vpi v vp vpc wpi w wp wpc v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in u n v cc s i gnd gnd out f o in v v w n v ni n nc temp f o p u v w n v cc s i gnd gnd out f o in b b r 20. 21. 22. 23. 24. 25. w v u n b p b w fo v fo u fo l r aa r c q f a p p p t b d x e g h z s 10 12 w 34 7 5 6 8 9 11 13 15 17 19 12 14 16 18 v v - dia. (4 typ.) nm pbnu y (15 typ.) mmmm u (4 typ.) 2.0 0.1 x 0.5 0.1 mm pin (6 typ.) 0.6 0.1 x 0.4 0.1 mm pin (19 typ.) description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM10RSH120 is a 1200v, 10 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 10 120 dimensions inches millimeters a 3.98 0.04 101.0 1.0 b 3.78 96.0 c 3.48 0.03 88.5 0.8 d 2.700 0.03 68.58 0.8 e 2.66 0.02 67.5 0.5 f 2.36 0.04 60.0 1.0 g 1.85 0.02 47.0 0.5 h 1.83 0.03 46.5 0.8 j 1.28 32.6 k 0.97 24.6 l 0.71 0.04 18.0 1.0 m 0.53 0.01 13.5 0.3 dimensions inches millimeters n 0.41 10.5 p 0.400 10.16 q 0.392 9.96 r 0.31 8.0 s 0.26 6.5 t 0.246 6.25 u 0.18 rad. rad. 4.5 v 0.18 dia. dia. 4.5 w 0.17 0.02 4.4 0.5 x 0.10 2.5 y 0.100 0.01 2.54 0.25 z 0.02 0.5 aa 0.14 3.5 outline drawing and circuit diagram mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m4 mounting screws 0.98 ~ 1.47 n m module weight (typical) 100 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part, t j = 125 c) v cc(prot.) 800 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc )v cin 20 volts fault output supply voltage applied between ( u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc )v fo 20 volts fault output current (sink current at u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 1200 volts collector current, (t c = 25 c) i c 10 amperes peak collector current, (t c = 25 c) i cp 20 amperes supply voltage (applied between p - n) v cc 900 volts supply voltage, surge (applied between p - n) v cc(surge) 1000 volts collector dissipation p c 62 watts brake sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 1200 volts collector current, (t c = 25 c) i c 10 amperes peak collector current, (t c = 25 c) i cp 20 amperes supply voltage (applied between p - n) v cc 900 volts supply voltage, surge (applied between p - n) v cc(surge) 1000 volts collector dissipation p c 41 watts diode forward current i f 10 amperes diode dc reverse voltage v r(dc) 1200 volts mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 15 27 amperes over current trip level brake part 15 27 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 41 amperes short circuit trip level brake part 41 amperes over current delay time t off(oc) v d = 15v 10 m s over temperature protection ot trip level 100 110 125 c ot r reset level 90 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 2535ma v d = 15v, v cin = 15v, v xp1 -v xpc 7 10 ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n b r -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c10ma emitter-collector voltage v ec -i c = 10a, v d = 15v, v cin = 5v 2.5 3.5 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 10a 2.3 3.3 volts v d = 15v, v cin = 0v, i c = 10a, 2.1 3.1 volts t j = 125 c inductive load switching times t on 0.4 0.7 1.5 m s t rr v d = 15v, v cin = 0v ? 15v 0.15 0.3 m s t c(on) v cc = 600v, i c = 10a 0.3 1.0 m s t off t j = 125 c 1.7 2.9 m s t c(off) 0.6 1.2 m s brake sector collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 10a, 2.8 3.8 volts t j = 25 c v d = 15v, v cin = 0v, i c = 10a, 2.5 3.5 volts t j = 125 c diode forward voltage v fm i f = 10a, v d = 15v, v cin = 5v 2.5 3.5 volts collector cutoff current i ces v ce = v ces , t j = 25 c1ma v ce = v ces , t j = 125 c10ma mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package
sep.2000 thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 2.0 c/watt r th(j-c)f each inverter fwdi 5.5 c/watt r th(c-f)q each brake igbt 3.0 c/watt r th(c-f)f each brake fwdi 5.5 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.044 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 800 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p , v p , w p , u n , v n , w n , b r 4.0 ~ v d volts pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 2.5 m s mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package
sep.2000 inverter part mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package 0 1.0 2.0 3.0 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 05 20 10 15 2.5 1.5 0.5 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0 1.0 2.0 3.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 01214161820 i c = 50a v cin = 0v t t j = 25 o c t j = 125 o c 2.5 1.5 0.5 0 2.0 0 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 4.0 5.0 10.0 15.0 t j = 25 o c v cin = 0v v d = 17v 13 15 1.0 3.0 10 0 10 2 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) 10 0 10 1 t on t off v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 0 10 1 10 2 10 -2 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) t c(on) 10 -1 10 0 t c(off) v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 10 1 10 2 10 1 collector current, i c , (amperes) reverse recovery time, t rr , ( m s) reverse recovery current, i rr , (amperes) reverse recovery current vs. collector current (typical) 10 2 10 3 10 0 10 1 10 2 v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c i rr t rr 0 0.5 1.0 10 0 00 10 1 10 2 diode forward characteristics emitter-collector voltage, v ec , (volts) collector reverse current, -i c , (amperes) 1.5 3.0 2.0 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c 2.5 junction temperature, t j , ( o c) 60 80 100 120 140 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 01214161820 t j = 25 o c 80 90 100 110 120 over current trip level vs. temperature (typical) over current trip level % (normalized) 0 20 60 100 140 v d = 15v -20
sep.2000 inverter part mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package 1.0 1.5 2.0 2.5 3.0 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width, t fo , (ms) -50 0 50 100 150 v d = 15v 11 12 13 14 15 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t j , ( o c) uv trip-reset level, uv t , uv r , (volts) -50 150 0 50 100 uv uv r time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 0 0 single pulse standard value = r th(j-c)q = 2 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 5.5 o c/w 10 -2 10 -3
sep.2000 brake part mitsubishi intelligent power modules PM10RSH120 flat-base type insulated package 0 1.0 2.0 3.0 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 02 10 46 8 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0.5 2.5 1.5 0 1.0 2.0 3.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 01214161820 t j = 25 o c v cin = 0v i c = 10a 0.5 1.5 2.5 012 0 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 3 5 15 4 t j = 25 o c v cin = 0v v d = 17v 13 10 15 0.5 1.0 1.5 diode forward characteristics diode forward voltage, v f , (volts) diode forward current, i f , (amperes) 2.0 3.5 2.5 10 0 10 1 10 2 3.0 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 3.0 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 5.5 o c/w 10 -2 10 -3
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