august 2010 FDB024N04AL7 n-ch annel powertrench ? mosfet ?2010 fairchild semiconductor corporation FDB024N04AL7 rev. a2 www.fairchildsemi.com 1 FDB024N04AL7 n-channel powertrench ? mosfet 40v, 219a, 2.4m features ?r ds(on) = 2.0m ( typ.)@ v gs = 10v, i d = 80a ? fast switching speed ? low gate charge ? high performance trench te chnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advanced powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d (pin4, tab) g s (pin2,3,5,6,7) (pin1) fdb series with suffix -l7 d 2 -pak-7l mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 40 v v gss gate to source voltage 20 v i d d r a i n c u r r e n t - continuous (t c = 25 o c, silicon limited) 219 * a - continuous (t c = 100 o c, silicon limited) 155 * - continuous (t c = 25 o c, package limited) 100 i dm d r a i n c u r r e n t - p u l s e d (note 1) 876 a e as single pulsed avalanche energy (note 2) 864 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 214 w - derate above 25 o c1.43w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.7 o c/w r ja thermal resistance, junction to ambient 62.5 *calculated continuous current based on maximum allowable junction temperature. package limitation current is 100a.
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdb024n04a FDB024N04AL7 d2-pak-7l 330mm 24mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c40 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-30-mv/ o c i dss zero gate voltage drain current v ds = 32v, v gs = 0v - - 10 a v ds = 32v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.0-3.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 80a - 2.0 2.4 m g fs forward transconductance v ds = 10v, i d = 80a (note 4) - 368 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 5490 7300 pf c oss output capacitance - 1220 1620 pf c rss reverse transfer capacitance - 155 233 pf q g(tot) total gate charge at 10v v ds = 32v, i d = 80a v gs = 10v (note 4, 5) - 84 109 nc q gs gate to source gate charge - 19 - nc q gs2 gate charge threshold to plateau - 9.5 - nc q gd gate to drain ?miller? charge - 12 - nc t d(on) turn-on delay time v dd = 20v, i d = 80a r gen = 4.7 , v gs = 10v (note 4, 5) -1744ns t r turn-on rise time - 8 26 ns t d(off) turn-off delay time - 71 152 ns t f turn-off fall time - 17 44 ns esr equivalent series resistance (g-s) - 1.1 - i s maximum continuous drain to source diode forward current - - 219 a i sm maximum pulsed drain to source diode forward current - - 876 a v sd drain to source diode forward voltage v gs = 0v, i sd = 80a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 80a di f /dt = 100a/ s (note 4) -54-ns q rr reverse recovery charge - 49 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 3mh, i as = 24a, v dd = 40v, r g = 25 , starting t j = 25 c 3. i sd 80a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 5 1 10 100 300 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.0v 4.0v 3.5v 3.0v 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 300 -55 o c 175 o c *notes: 1. v ds = 5v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 70 140 210 280 350 1.6 1.8 2.0 2.2 2.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 300 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0306090 0 2 4 6 8 10 *note: i d = 80a v ds = 8v v ds = 20v v ds = 32v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 0 2000 4000 6000 8000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 25
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.4 0.8 1.2 1.6 2.0 *notes: 1. v gs = 10v 2. i d = 80a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.93 0.96 0.99 1.02 1.05 1.08 1.11 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 25 50 100 150 0 60 120 180 240 i d , drain current [a] t c , case temperature [ o c ] limited by package 175 0.1 1 10 60 0.1 1 10 100 1000 3000 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 100ms 0.001 0.01 0.1 1 10 100 1000 1 10 100 starting t j = 25 o c starting t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a) 600 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1]
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 0.7 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [ z t jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switchin g test circuit & waveforms
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 8 mechanical dimensions dimensions in millimeters d 2 pak-7l
FDB024N04AL7 n-ch annel powertrench ? mosfet FDB024N04AL7 rev. a2 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any compo nent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product de velopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supple mentary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semicond uctor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiti ng policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase co unterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of productio n and manufacturing delays. fairchild is ta king strong measures to protect ourselve s and our customers from the proliferation of counterfeit part s. fairchild strongly encourages customers to pu rchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty cove rage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i48 ?
|
