*rohs directive 2002/95/ec jan 27 2003 including annex january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector TISPL758LF3D integrated symmetrical and asymmetrical bidirectional overvoltage protectors for lucent technologies l7581/2/3 line card access switches d package (top view) *rohs compliant symmetrical and asymmetrical characteristics for optimum protection of lucent l7581/2/3 lcas rated for international surge wave shapes te r m i n a l p a i r v drm v v (bo) v t-g (symmetrical) 105 130 r-g (asymmetrical) +105, -180 +130, -220 customized versions available 1 2 3 4 5 6 7 8 mdxx ae b g g g g nc t r nc nc - no internal connection device symbol g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c description the tispl758lf3 is an integrated combination of a symmetrical bidirectional overvoltage protector and an asymmetrical bidirecti onal overvoltage protector. it is designed to limit the peak voltages on the line terminals of the lucent technologies l7581/2/3 lca s (line card access switches). an lcas may also be referred to as a solid state relay, ssr, i.e. a replacement of the conventional electro-m echanical relay. the TISPL758LF3D voltages are chosen to give adequate lcas protection for all switch conditions. the most potentially stressful condition is low level power cross when the lcas switches are closed. under this condition, the TISPL758LF3D limits the voltage and correspo nding lcas dissipation until the lcas thermal trip operates and opens the switches. under open-circuit ringing conditions, the line ring (r) conductor will have high peak voltages. for battery backed ringing, th e ring conductor will have a larger peak negative voltage than positive i.e. the peak voltages are asymmetric. an overvoltage protector with a s imilar voltage asymmetry will give the most effective protection. on a connected line, the tip (t) conductor will have much smaller voltage le vels than the open-circuit ring conductor values. here a symmetrical voltage protector gives adequate protection. how to order device carrier taped and reeled TISPL758LF3Dr-s TISPL758LF3D tube TISPL758LF3D-s order as wave shape standard i tsp a 2/10 s gr-1089-core 175 8/20 s ansi c62.41 120 10/160 s fcc part 68 60 10/700 s itu-t k20/21 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 ..............................................ul recognized component ion-implanted breakdown region ? precise and stable voltage ? low vol tage overshoot under surge planar passivated junctions ? low of f-state current................................................< 10 a
january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage r-g terminals t- g t e r m i n a l s v drm -180, +105 -105, +105 v non-repetitive peak on-state pulse current (see notes 1, 2 and 3) i tsp a 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 175 8/20 s (ansi c62.41, 1.2/50 s voltage wave shape) 120 10/160 s (fcc part 68, 10/160 s voltage wave shape) 60 5/200 s (vde 0433, 2.0 kv, 10/700 s voltage wave shape) 50 0.2/310 s (i3124, 2.0 kv, 0.5/700 s voltage wave shape) 50 5/310 s (itu-t k20/21, 2.0 kv, 10/700 s voltage wave shape) 50 5/310 s (ftz r12, 2.0 kv, 10/700 s voltage wave shape) 50 10/560 s (fcc part 68, 10/560 s voltage wave shape) 45 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) 35 non-repetitive peak on-state current (see notes 1, 2 and 3) i tsm 16 20 a full sine wave 50 hz 60 hz repetitive peak on-state current, 50/60 hz, (see notes 2 and 3) i tsm 2x1 a initial rate of rise of on-state current, exponential curr ent ramp, maximum ramp value < 70 a di t /dt 150 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -40 to +150 c notes: 1. above the maximum specified temperature, derate linearly to zero at 150 c lead temperature. 2. initially the tispl758lf 3 must be in thermal equilibrium with 0 cTISPL758LF3D evaluations.
january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector electrical characteristics for the t-g and r-g terminal pairs, t j = 25 c (unless otherwise noted) parameter test conditions value unit min typ max i drm repetitive peak off- state current v d = v drm , (see note 4) 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source =300 ? r-g terminals t- g t e r m i n a l s -220 -130 +130 +130 v v (bo) impulse breakover voltage rated impulse conditions with operational pass series resistor r-g terminals t- g t e r m i n a l s -240 -140 +140 +140 v i h holding current di/dt = -30 ma/ms di/dt = +30 ma/ms +100 -150 ma i d off-state current 0 < v d < 50 v, t j = 85 c 10 a c tg off-state capacitance f = 100 khz, v d =1v rms v tg = -5 v, (see note 5) 18 36 pf c rg off-state capacitance f = 100 khz, v d =1v rms v tg = -50 v, (see note 5) 10 20 pf notes: 4. positive and negative values of v drm are not equal. see ratings table. 5. these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the third terminal i s connected to the guard terminal of the bridge. parameter test conditions min typ max unit r ja junction to free air thermal resistance 160 c/w thermal characteristics
january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector parameter measurement information -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxae figure 1. asymmetrical voltage-current characteristic for r-g terminal pair -v i h i tsm i tsp v drm i drm v d v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxah figure 2. symmetrical voltage-current characteristic for t-g terminal pair
january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector typical characteristics figure 3. figure 4. figure 5. figure 6. off-state current t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0.001 0.01 0.1 1 10 100 tc3mag junction temperature vs v d = 50 v normalized breakdown voltages vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3maja v (bo) v drm normalized breakover voltage di/dt - rate of rise of principle current - a/ s 0.001 0.01 0.1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3mac rate of rise of principle current vs normalized holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc3maha
january 1998 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISPL758LF3D lcas protector applications information figure 7. lcas protection with a TISPL758LF3D r line r1a r1b ring generator s4a s4b r2a r2b v ringbat v ring ring wire tip wire th1 th2 slic v bat TISPL758LF3D over- current protection r bat t bat t line r ringing t ringing lcas
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