weitron ht t p : w w w . w e i t r on.co m . t w drain current -550m amperes drain source voltage -20 voltage featu r es: *super high dense cell design for low r ds(on) r ds(on) <600m ? @v gs =-10v *simple gate drive *small package outline *fas t swi t ching speed *sot-23 package description *designer with best combination of fast switching *low on-resistance *cost-effectiveness maximum ratings (t a =25 c unless o therwise specified) rating symbo l v alue unit drain-source voltage ,(t a =25?c) ,(t a =70?c) v ds -20 v gate-source voltage v gs 12 continuous drain current 3 -550 i d - 44 0 pulsed drain current 1,2 i d m 2.5 m a total power dissipation(t a =25?c) p d 1.0 w maximum thermal resistace junction-ambient r ja 125 ?c/w operating junction and storage temperature range tj,tstg - 55~+150 ?c device marking WTC1333=1333 WTC1333 surface mount p-channel enhancement mode mosfet 1 2 3 g a te source drain 1/ 6 17-jun-05 sot-23 1 2 3
weitron ht t p : w w w . w e i t r on.co m . t w electrical characteristics (t a = 2 5 u n less o t he r wise n o t ed) cha r a c t e r i st i c symbol m i n t yp m ax un i t s t atic drain-source breakdown voltage v gs =0,i d =-250 a bv dss -20 - - gate-source threshold voltage v ds =v gs ,i d =-250 a v gs(th) -0.5 - -1. 2 v gate-source leakage current v gs =12v i gss i dss - - 100 na - - -1 drain-source leakage current(tj=25?c) v ds =-20v,v gs =0 v ds =-16v,v gs =0 drain-source leakage current(tj=70?c) - - -10 a drain-source on-resistance v gs =-10v,i d =-550ma v gs =-4.5v,i d =-500ma v gs =-2.5v,i d =-300ma r ds(on) - - - - - - 600 800 1000 m forward transconductance v ds =-5v,i d =-550ma g f s - 1 - s dynamic input capacitance v gs =0v,v ds =-10v,f=1.0mhz v gs =0v,v ds =-10v,f=1.0mhz v gs =0v,v ds =-10v,f=1.0mhz c iss - 66 105.6 output capacitance c oss - 25 - reverse transfer capacitance c rss - 20 - pf 2/6 17-jun-05 WTC1333
switching turn-on delay time 2 v ds =-10v,v gs =-5v,i d =-500ma,r d =20 ,r g =3.3 v ds =-10v,v gs =-5v,i d =-500ma,r d =20 ,r g =3.3 v ds =-10v,v gs =-5v,i d =-500ma,r d =20 ,r g =3.3 v ds =-10v,v gs =-5v,i d =-500ma,r d =20 ,r g =3.3 v ds =-16v,v gs =-4.5v,i d =-500ma v ds =-16v,v gs =-4.5v,i d =-500ma v ds =-16v,v gs =-4.5v,i d =-500ma t d(on) t d(off) - 5 - rise time t r t f - 8 - turn-off delay time - 10 - fall time - 2 - ns total gate charge 2 q g q gs q gd - 1.7 2.7 g a te-source c h a r ge - 0.3 - g a te-source c h a nge - 0.4 - nc sou r ce-drain diode characteristics forward on voltage 2 v gs =0v,i s =-300ma v sd - - -1 . 2 v note: 1. pulse width limited by max, junction temperature. 2. pulse width 300s, duty cycle 2%. 3. surface mounted on fr4 board, t 10sec. 3/6 17-jun-05 weitron ht t p : w w w . w e i t r on.co m . t w WTC1333
weitron http://ww w .weit r on.com.tw WTC1333 -v ds ,drain- t o-source vo l t age(v) i - d ) a ( t n e r r u c n i a r d , i d ) a ( t n e r r u c n i a r d , v ds ,drain-to-source v oltage(v) fig.1 t ypical output characteristics -v gs ,gate-to-source v oltage(v) r ) n o ( s d ) ? m ( 1400 1000 1200 600 800 400 200 1 4 7 10 fig.3 on-resistance v .s. gate v oltage r d e z i l a m r o n ) n o ( s d 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 fig.4 normalized onresistance fig.2 t ypical output characteristics i d = -0.3a t a = 25?c -v ds ,source-to-drain v oltage(v) i - s ) a ( 1.0 0.6 0.8 0.4 0.2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 fig.5 forward characteristics of reverse diode t j ,junction t emperature(?c) t j ,junction t emperature(?c) v - d e z i l a m r o n ) h t ( s g ) v ( 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 fig.6 gate th r eshold v oltage v .s. junction t emperatu r e i d = -0.5a v g = -4.5v t j = 25?c t j = 150?c -5.0v -4.5v -3.5v -2.5v v g = - 2.0v 1.5 2.0 2.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 c 4/6 17-jun-05 -5.0v -4.5v -3.5v -2.5v v g = - 2.0v 1.5 2.0 2.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 t a =150 c
weitron http://ww w .weit r on.com.tw WTC1333 q g , t otal gate cha r ge(nc) v - s g , g a t e t o s o u r c e v o l t a g e ( v ) 12 10 8 6 2 4 0 0 1 2 3 4 fig 7. gate charge characteristics v ds = -16v i d = -0.5a -v ds , drain-to-source v oltage(v) i - d ) a ( 10 1 0.1 0.01 0.1 1 10 100 fig 9. maximum safe operation a r ea fig 1 1. switching t ime ci r cuit fig.12 gate charge w aveform t a = 25?c single pulse v ds 90% 10% v gs t r t d(on) t d(o f f) t f 1ms 100us 10ms 100ms dc t, pulse w idth(s) r ( e s n o p s e r l a m r e h t d e z i l a m r o n a j ) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 fig 10. effective t ransient thermal impedance duty factor = 0.5 -v ds , drain-to-source v oltage(v) f p ( c ) 100 10 1 3 5 7 9 11 fig 8. t ypical capacitance characteristics f = 1.0mhz 0.2 0.1 0.05 0.02 0.01 single pulse p dm duty factor = t / t peak tj=p dm x r ja + t a t t crss coss ciss vg -4.5v q g q gs q gd cha r ge q 5/6 17-jun-05
weitron http://ww w .weit r on.com.tw WTC1333 6/6 17-jun-05 unit:mm dim a b c d e g h j k l m min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 a b d e g m l h j t o p view k c so t -23 so t -23 outline dimension
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