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www.irf.com 1 8/22/00 IRF3704 IRF3704s smps mosfet hexfet ? power mosfet benefits ultra-low gate impedance very low r ds(on) fully characterized avalanche voltage and current v dss r ds(on) max i d 20v 9.0m ? 77a notes through are on page 10 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25 c continuous drain current, v gs @ 10v 77 i d @ t c = 70 c continuous drain current, v gs @ 10v 64 a i dm pulsed drain current 308 p d @t c = 25 c maximum power dissipation 87 w p d @t c = 70 c maximum power dissipation 61 w linear derating factor 0. 59 mw/ c t j , t stg junction and storage temperature range -55 to + 175 c * when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 d 2 pak IRF3704s to-220ab IRF3704 to-262 IRF3704l thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.73 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount)* ??? 40 IRF3704l high frequency dc-dc isolated converters with synchronous rectification for telecom and industrial use applications high frequency buck converters for computer processor power pd - 93888b
IRF3704/3704s/3704l 2 www.irf.com dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 216 mj i ar avalanche current ??? 71 a avalanche characteristics s d g diode characteristics 77 308 a symbol parameter min. typ. max. units conditions g fs forward transconductance 42 ??? ??? sv ds = 10v, i d = 57a q g total gate charge ??? 19 ??? i d = 28.4a q gs gate-to-source charge ??? 8.1 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 6.4 ??? v gs = 4.5v q oss output gate charge ??? 16 24 v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 8.4 ??? v dd = 10v t r rise time ??? 98 ??? i d = 28.4a t d(off) turn-off delay time ??? 12 ??? r g = 1.8 ? t f fall time ??? 5.0 ??? v gs = 4.5v c iss input capacitance ??? 1996 ??? v gs = 0v c oss output capacitance ??? 1085 ??? v ds = 10v c rss reverse transfer capacitance ??? 155 ??? pf ? = 1.0mhz v sd diode forward voltage symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.88 1.3 v t j = 25 c, i s = 35.5a, v gs = 0v ??? 0.82 ??? t j = 125 c, i s = 35.5a, v gs = 0v t rr reverse recovery time ??? 38 57 ns t j = 25 c, i f = 35.5a, v r =20v q rr reverse recovery charge ??? 45 68 nc di/dt = 100a/s t rr reverse recovery time ??? 41 62 ns t j = 125 c, i f = 35.5a, v r =20v q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/ c reference to 25 c, i d = 1ma ??? 6.3 9.0 v gs = 10v, i d = 15a ??? 9.8 13.5 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125 c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25 c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ?
IRF3704/3704s/3704l www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 3.5v 20s pulse width tj = 25 c vgs top 10.0v 9.0v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 3.5v 20s pulse width tj = 175 c vgs top 10.0v 9.00v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 10 100 1000 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 77a
IRF3704/3704s/3704l 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 10 20 30 40 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 28.4a v = 10v ds 0.1 1 10 100 1000 0.2 0.5 0.8 1.1 1.4 1.7 2.0 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds ( on ) single pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRF3704/3704s/3704l www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 175 0 15 30 45 60 75 90 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response )
IRF3704/3704s/3704l 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 50 100 150 200 250 300 i d , drain current ( a ) 0.005 0.010 0.015 0.020 r ds ( on ) , drain-to-source on resistance ( ? ) vgs = 4.5v vgs = 10v 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.006 0.007 0.008 0.009 0.010 r ds(on) , drain-to -source on resistance ( ? ) i d = 35.5a 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 11.6a 23.8a 28.4a fig 14a&b. basic gate charge test circuit and waveforms
IRF3704/3704s/3704l www.irf.com 7 lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in - b - 1.32 ( .05 2 ) 1.22 ( .04 8 ) 3x 0.5 5 ( .0 22 ) 0.4 6 ( .0 18 ) 2.92 ( .11 5 ) 2.64 ( .10 4 ) 4.69 ( .1 8 5 ) 4.20 ( .1 6 5 ) 3x 0.93 ( .0 3 7 ) 0.69 ( .0 2 7 ) 4.06 ( .1 6 0 ) 3.55 ( .1 4 0 ) 1.15 ( .045 ) m in 6.47 ( .255 ) 6.10 ( .240 ) 3.78 ( .14 9 ) 3.54 ( .13 9 ) - a - 10.54 ( .415 ) 10.29 ( .405 ) 2.87 ( .1 1 3 ) 2.62 ( .1 0 3 ) 15.24 ( .600 ) 14.84 ( .584 ) 14.09 ( .5 5 5 ) 13.47 ( .5 3 0 ) 3x 1.40 ( .05 5 ) 1.15 ( .04 5 ) 2.54 ( .100 ) 2x 0.36 ( .0 1 4 ) m b a m 4 1 2 3 notes: 1 d ime n s io n in g & to le r a n c in g p e r a n s i y 14.5m , 19 82. 3 o u tlin e c o n f o r m s to je d e c o u t lin e t o -2 20a b . 2 c o n tr o llin g d im e n s io n : in c h 4 h e a t s in k & le a d m e a s u r e m e n t s d o n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w ith as se m bly lo t c o de 9b 1m assembly lot co de date code (yyww) yy = year w w = w ee k 9246 irf1010 9b 1m a
IRF3704/3704s/3704l 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - gate 2 - d ra in 3 - source 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a dimensions are shown in millimeters (inches)
IRF3704/3704s/3704l www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches)
IRF3704/3704s/3704l 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 8/00 repetitive rating; pulse width limited by max. junction temperature. notes: starting t j = 25 c, l = 0.5 mh r g = 25 ? , i as = 28.4 a. pulse width 300s; duty cycle 2%. dimensions are shown in millimeters (inches) d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) ma x. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. this is only applied to to-220ab package calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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