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products and specifications discussed herein ar e subject to change by micron without notice. 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm features pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 1 ?2003 micron technology, inc. all rights reserved. ddr sdram rdimm mt36vddt12872 ? 1gb 1 mt36vddt25672 ? 2gb 1 mt36vddt51272 ? 4gb for component data sheets, refer to micron?s web site: www.micron.com features ? 184-pin, registered dual in-line memory module (rdimm) ? standard and low profile height pcb modules ? fast data transfer rates: pc2100 or pc2700 ? 1gb (128 meg x 72), 2gb (256 meg x 72), and 4gb (512 meg x 72) ? supports ecc error detection and correction ?v dd = v dd q = +2.5v ?v ddspd = +2.3v to +3.6v ? 2.5v i/o (sstl_2-compatible) ? internal, pipelined double data rate (ddr) 2 n -prefetch architecture ? bidirectional data strobe (dqs) transmitted/ received with data?that is, source-synchronous data capture ? differential clock inputs (ck and ck#) ? multiple internal device banks for concurrent operation ?dual rank ? selectable burst lengths (bl): 2, 4, or 8 ? auto precharge option ? auto refresh and self refresh modes: 7.8125s maximum average periodic refresh interval ? serial presence-det ect (spd) with eeprom ? selectable cas latency (cl) for maximum compatibility ? gold edge contacts 184-pin rdimm figures figure 1: standard-height layout (mo-206) pcb height: 43.18mm (1.7in) figure 2: low-profile layout (mo-206) notes: 1. end of life. 2. contact micron for industrial temperature module offerings. 3. cl = cas (read) latency; registered mode will add one clock cycle to cl. 4. not recommended for new designs. options marking ? operating temperature 2 ? commercial (0c t a +70c) none ? industrial (?40c t a +85c) i ?package ? 184-pin dimm (standard) g ? 184-pin dimm (pb-free) y ? memory clock, speed, cas latency 3 ? 6.0ns (167 mhz), 333 mt/s, cl = 2.5 -335 ? 7.5ns (133 mhz), 266 mt/s, cl = 2 4 -262 ? 7.5ns (133 mhz), 266 mt/s, cl = 2 4 -26a ? 7.5ns (133 mhz), 266 mt/s, cl = 2 -265 pcb height: 30.48mm (1.2in)
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 2 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm features notes: 1. the values of t rcd and t rp for -335 modules show 18ns to a lign with industry specifications; actual ddr sdram device specifications are 15ns. notes: 1. the data sheets for the base devi ces can be found on micron?s web site. 2. all part numbers end with a two-place code (not shown) that desi gnates component and pcb revisions. consult factory for curre nt revision codes. example: mt36vddt51272y-335a2 . table 1: key timing parameters speed grade industry nomenclature data rate (mt/s) t rcd (ns) t rp (ns) t rc (ns) notes cl = 2.5 cl = 2 -335 pc2700 333 266 18 18 60 1 -262 pc2100 266 266 15 15 60 -26a pc2100 266 266 20 20 65 -265 pc2100 266 200 20 20 65 table 2: addressing parameter 1gb 2gb 4gb refresh count 4k 8k 8k row address 8k (a0?a12) 8k (a0?a12) 16k (a0?a13) device bank address 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) device configuration 256mb (64 meg x 4) 512mb (128 meg x 4) 1gb (256 meg x 4) column address 2k (a0?a9, a11) 4k (a0? a09, a11, a12) 4k (a0?a9, a11, a12) module rank address 2 (s0#, s1#) 2 (s0#, s1#) 2 (s0#, s1#) table 3: part numbers and timing parameters ? 1gb modules base device: mt46v64m4, 1 256mb ddr sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) mt36vddt12872g-335__ 1gb 128 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt36vddt12872y-335__ 1gb 128 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt36vddt12872g-26a__ 1gb 128 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt36vddt12872g-265__ 1gb 128 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt36vddt12872y-265__ 1gb 128 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 table 4: part numbers and timing parameters ? 2gb modules base device: mt46v128m4, 1 512mb ddr sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) mt36vddt25672g-335__ 2gb 256 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt36vddt25672g-262__ 2gb 256 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-2-2 mt36vddt25672g-26a__ 2gb 256 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt36vddt25672y-26a__ 2gb 256 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt36vddt25672g-265__ 2gb 256 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt36vddt25672y-265__ 2gb 256 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 3 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm features notes: 1. the data sheets for the base devi ces can be found on micron?s web site. 2. all part numbers end with a two-place code (not shown) that desi gnates component and pcb revisions. consult factory for curre nt revision codes. example: mt36vddt51272y-335a2 . table 5: part numbers and timing parameters ? 4gb modules base device: mt46v256m4, 1 1gb ddr sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) mt36vddt51272g-335__ 4gb 512 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt36vddt51272y-335__ 4gb 512 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt36vddt51272g-26a__ 4gb 512 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt36vddt51272g-265__ 4gb 512 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt36vddt51272y-265__ 4gb 512 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 4 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm pin assignments and descriptions pin assignments and descriptions notes: 1. pin 167 is nc for 1gb and 2gb, or a13 for 4gb. table 6: pin assignments 184-pin ddr rdimm front 184-pin ddr rdimm back pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol 1v ref 24 dq17 47 dqs8 70 v dd 93 v ss 116 v ss 139 v ss 162 dq47 2 dq0 25 dqs2 48 a0 71 nc 94 dq4 117 dq21 140 dqs17 163 nc 3v ss 26 v ss 49 cb2 72 dq48 95 dq5 118 a11 141 a10 164 v dd q 4 dq1 27 a9 50 v ss 73 dq49 96 v dd q 119 dqs11 142 cb6 165 dq52 5dqs028dq1851 cb3 74 v ss 97 dqs9 120 v dd 143 v dd q 166 dq53 6 dq2 29 a7 52 ba1 75 nc 98 dq6 121 dq22 144 cb7 167 1 nc/a13 7v dd 30 v dd q 53 dq32 76 nc 99 dq7 122 a8 145 v ss 168 v dd 8 dq3 31 dq19 54 v dd q77v dd q100 v ss 123 dq23 146 dq36 169 dqs15 9 nc 32 a5 55 dq33 78 dqs6 101 nc 124 v ss 147 dq37 170 dq54 10 reset# 33 dq24 56 dqs4 79 dq50 102 nc 125 a6 148 v dd 171 dq55 11 v ss 34 v ss 57 dq34 80 dq51 103 nc 126 dq28 149 dqs14 172 v dd q 12 dq8 35 dq25 58 v ss 81 v ss 104 v dd q 127 dq29 150 dq38 173 nc 13 dq9 36 dqs3 59 ba0 82 nc 105 dq12 128 v dd q 151 dq39 174 dq60 14 dqs1 37 a4 60 dq35 83 dq56 106 dq13 129 dqs12 152 v ss 175 dq61 15 v dd q38 v dd 61 dq40 84 dq57 107 dqs10 130 a3 153 dq44 176 v ss 16 nc 39 dq26 62 v dd q85 v dd 108 v dd 131 dq30 154 ras# 177 dqs16 17 nc 40 dq27 63 we# 86 dqs7 109 dq14 132 v ss 155 dq45 178 dq62 18 v ss 41 a2 64 dq41 87 dq58 110 dq15 133 dq31 156 v dd q 179 dq63 19 dq10 42 v ss 65 cas# 88 dq59 111 cke1 134 cb4 157 s0# 180 v dd q 20 dq11 43 a1 66 v ss 89 v ss 112 v dd q 135 cb5 158 s1# 181 sa0 21 cke0 44 cb0 67 dqs5 90 nc 113 nc 136 v dd q 159 dqs14 182 sa1 22 v dd q 45 cb1 68 dq42 91 sda 114 dq20 137 ck0 160 v ss 183 sa2 23 dq16 46 v dd 69 dq43 92 scl 115 a12 138 ck0# 161 dq46 184 v ddspd
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 5 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm pin assignments and descriptions table 7: pin descriptions symbol type description a0?a13 input address inputs: provide the row address fo r active commands, and the column address and auto precharge bi t (a10) for read/write commands, to select one location out of the memory array in the respective device bank. a10 sampled during a precharge command determines whether the precharge applies to one device bank (a10 low, device bank selected by ba0 and ba1) or all device banks (a10 high). the addr ess inputs also provide the op-code during a mode register set command. ba0 and ba1 define which mode register (mode register or extended mo de register) is load ed during the load mode register command. a0?a12 (1gb, 2gb ) or a0?a13 (4gb). ba0, ba1 input bank address: ba0 and ba1 define the device bank to which an active, read, write, or precharge command is being applied. ck0, ck0# input clock: ck and ck# are differential cloc k inputs. all control, command, and address input signals are sa mpled on the crossing of the positive edge of ck and the negative edge of ck#. output da ta (dq and dqs) is referenced to the crossings of ck and ck#. cke0, cke1 input clock enable: cke enables (registered high) and cke disables (registered low) the internal clock, input buffers, and output drivers. ras#, cas#, we# input command inputs: ras#, cas#, and we# (along with s#) define the command being entered. reset# input reset: asynchronously forces all registered outputs low when reset# is low. this signal can be used during power-up to ensure that cke is low and dq are high-z. s0#, s1# input chip select: s# enables (registered low) and disables (registered high) the command decoder. sa0?sa2 input presence-detect address inputs: these pins are used to configure the spd eeprom address range on the i 2 c bus. scl input serial clock for spd eeprom: scl is used to synchronize the presence-detect data transfer to and from the module. cb0?cb7 i/o check bits. dq0?dq63 i/o data input/output: data bus. dqs0?dqs17 i/o data strobe: output with read data. edge-ali gned with read data. input with write data. center-aligned with write data. used to capture data. sda i/o serial data: sda is a bidirectional pin used to transfer addresses and data into and out of the presence-det ect portion of the module. v dd /v dd q supply power supply: +2.5v 0.2v. v ddspd supply spd eeprom power supply: +2.3v to +3.6v. v ref supply sstl_2 refe rence voltage (v dd /2). v ss supply ground. nc ? no connect: these pins are not co nnected on the module. nf ? no function: these pins are connected with in the module, but provide no functionality.
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 6 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm functional block diagrams functional block diagrams figure 3: functional block diagram, standard height, 43.18mm (1.7in) r s 0# dq s cs # dm u1 b dq dq dq dq dq0 dq1 dq2 dq3 dq s 0 u1t u22 b dq4 dq5 dq 6 dq7 u22t u2 b dq8 dq9 dq10 dq11 dq s 1 u2t c b0 c b1 c b2 c b3 u5t u3 b dq1 6 dq17 dq18 dq19 dq s 2 dq s6 u8 b dq48 dq49 dq50 dq51 u20 b dq20 dq21 dq22 dq23 u15 b dq52 dq53 dq54 dq55 dq s 7 u4 b dq24 dq25 dq2 6 dq27 dq s 3 u9 b dq5 6 dq57 dq58 dq59 u19 b dq28 dq29 dq30 dq31 u14 b dq 6 0 dq 6 1 dq 6 2 dq 6 3 u21 b dq12 dq13 dq14 dq15 u21t u 6b dq32 dq33 dq34 dq35 dq s 4 u 6 t u17 b dq3 6 dq37 dq38 dq39 u17t u7 b dq40 dq41 dq42 dq43 dq s 5 u7t u18 b c b4 c b5 c b 6 c b7 u18t u1 6b dq44 dq45 dq4 6 dq47 u1 6 t r s 1# u3t u20t u4t u19t u15t u9t u14t dq s 9 dq s 17 dq s 15 dq s 1 6 dq s 12 dq s 11 dq s 10 dq s 14 dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq s 8 u5 b u8t dq s 13 dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm v ss s a0 s da s a1 s a2 sc l a0 s pd eeprom a1 a2 wp u10 v ss pll ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 re g ister x 2 c k0 c k0# u12 v ref v ss ddr s dram ddr s dram v dd q v dd ddr s dram ddr s dram v dd s pd s pd eeprom s 0#, s 1# ba0, ba1 a0?a13/a12 ra s # r s 0#, r s 1#: ddr s dram rba0, rba1: ddr s dram ra0?ra13/ra12 : ddr s dram rra s #: ddr s dram r c a s #: ddr s dram r c ke0, r c ke1: ddr s dram rwe#: ddr s dram c a s # c ke0, c ke1 we# r e g i s t e r s c k c k# re s et# u11, u13
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 7 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm functional block diagrams figure 4: functional block diagram, low profile, 43.18mm (1.2in) r s 0# dq s cs # dm u1 b dq dq dq dq dq0 dq1 dq2 dq3 dq s 0 u1t u18 b dq4 dq5 dq 6 dq7 u18t u2 b dq8 dq9 dq10 dq11 dq s 1 u2t c b0 c b1 c b2 c b3 u5t u3 b dq1 6 dq17 dq18 dq19 dq s 2 dq s6 u8 b dq48 dq49 dq50 dq51 u1 6b dq20 dq21 dq22 dq23 u11 b dq52 dq53 dq54 dq55 dq s 7 u4 b dq24 dq25 dq2 6 dq27 dq s 3 u9 b dq5 6 dq57 dq58 dq59 u15 b dq28 dq29 dq30 dq31 u10 b dq 6 0 dq 6 1 dq 6 2 dq 6 3 u17 b dq12 dq13 dq14 dq15 u17t u 6b dq32 dq33 dq34 dq35 dq s 4 u 6 t u13 b dq3 6 dq37 dq38 dq39 u13t u7 b dq40 dq41 dq42 dq43 dq s 5 u7t u14 b c b4 c b5 c b 6 c b7 u14t u12 b dq44 dq45 dq4 6 dq47 u12t r s 1# u3t u1 6 t u4t u5t u11t u9t u10t dq s 9 dq s 17 dq s 15 dq s 1 6 dq s 12 dq s 11 dq s 10 dq s 14 dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq s 8 u5 b u8t dq s 13 dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm dq s cs # dm v ss s a0 s da s a1 s a2 sc l a0 s pd eeprom a1 a2 wp u22 v ss pll ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 ddr s dram x 4 re g ister x 2 c k0 c k0# u20 v ref v ss ddr s dram ddr s dram v dd q v dd ddr s dram ddr s dram v dd s pd s pd eeprom s 0#, s 1# ba0, ba1 a0?a13/a12 ra s # r s 0#, r s 1#: ddr s dram rba0, rba1: ddr s dram ra0?ra13/ra12: ddr s dram rra s #: ddr s dram r c a s #: ddr s dram r c ke0, r c ke1: ddr s dram rwe#: ddr s dram c a s # c ke0, c ke1 we# r e g i s t e r s c k c k# re s et# u19, u20
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 8 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm general description general description the mt36vddt12872, mt36vddt25672, and mt36vddt51272 ddr sdram modules are high-speed, cmos dynamic random acce ss 1gb, 2gb, and 4gb memory modules organized in a x72 configuration. these modules use ddr sdram devices with four internal banks. ddr sdram modules use a double data rate architecture to achieve high-speed opera- tion. the double data rate architecture is essentially a 2 n -prefetch architecture with an interface designed to transfer two data words per clock cycle at the i/o pins. a single read or write access for ddr sdram mo dules effectively consists of a single 2 n -bit-wide, one-clock-cycle data transfer at the internal dram core and two corre- sponding n -bit-wide, one-half-clock-cycle da ta transfers at the i/o pins. a bidirectional data strobe (dqs) is transmitted externally, along with data, for use in data capture at the receiver. dqs is a strobe transmitted by the ddr sdram device during reads and by the memory controller during writes. dqs is edge-aligned with data for reads and center-aligned with data for writes. ddr sdram modules operate from differential clock inputs(ck and ck#); the crossing of ck going high and ck# going low will be referred to as the positive edge of ck. control, command, and address signals are registered at every positive edge of ck. input data is registered on both edges of dqs, and output data is referenced to both edges of dqs, as well as to both edges of ck. register and pll operation these ddr sdram modules operate in regist ered mode, where the control, command, and address input signals are latched in the regi sters on the rising clock edge and sent to the ddr sdram devices on the following rising clock edge (data access is delayed by one clock cycle). a phase-lock loop (pll) on the module receives and redrives the differ- ential clock signals (ck, ck#) to the ddr sd ram devices. the register(s) and pll reduce control, command, address, and clock sign als loading by isolating dram from the system controller. pll clock timing is defi ned by jedec specifications and ensured by use of the jedec clock reference board. registered mode will add one clock cycle to cl. serial presence-d etect operation ddr sdram modules incorporate serial presence-detect. the spd data is stored in a 256-byte eeprom. the first 128 bytes are progra mmed by micron to identify the module type and various ddr sdram organizations and timing parameters. the remaining 128 bytes of storage are available for use by th e customer. system read/write operations between the master (system logic) and the slave eeprom device occur via a standard i 2 c bus using the dimm?s scl (clock) and sda (data) signals, together with sa[2:0], which provide eight unique dimm/eeprom addr esses. write protect (wp) is connected to v ss , permanently disabling hardware write protect.
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 9 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm electrical specifications electrical specifications stresses greater than those listed in ta ble 8 may cause perman ent damage to the module. this is a stress rating only, and func tional operation of the module at these or any other conditions outside those indicated in each device?s data sheet is not implied. exposure to absolute maximum rating cond itions for extended periods may adversely affect reliability. notes: 1. for further information, refer to technical note tn-00-08: ?thermal applications,? available on micron?s web site. table 8: absolute maximum ratings symbol parameter min max units v dd /v dd qv dd /v dd q supply voltage relative to v ss ?1.0 +3.6 v v in , v out voltage on any pin relative to v ss ?0.5 +3.2 v i i input leakage curren t; any input 0v v in v dd ; v ref input 0v v in 1.35v (all other pins not under test = 0v) address inputs, ras#, cas#, we#, ba, s#, cke ?5 +5 a ck, ck# ?10 +10 dm ?4 +4 i oz output leakage current; 0v v out v dd q; dq are disabled dq, dqs ?10 +10 a t a dram ambient operating temperature 1 commercial 0 +70 c industrial ?40 +85 c
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 10 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm electrical specifications dram operating conditions recommended ac operating conditions are given in the ddr component data sheets. component specifications are available on micron?s web site. module speed grades correlate with component speed grades, as shown in table 9. design considerations simulations micron memory modules are designed to op timize signal integr ity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. however, good sign al integrity starts at the system level. micron encourages designers to simulate th e signal characteristics of the system?s memory bus to ensure adequate signal integrity of the entire memory system. power operating voltages are specified at the dram , not at the edge connector of the module. designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. table 9: module and component speed grades ddr components may exceed th e listed module speed grades module speed grade component speed grade -335 -6 -262 -75e -26a -75z -265 -75
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 11 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm electrical specifications i dd specifications notes: 1. value calculated as one mo dule rank in this op erating condition; all other module ranks in i dd 2p (cke low) mode. 2. value calculated reflects all module ranks in this operating condition. table 10: i dd specifications an d conditions ? 1gb values are for the mt46v64m4 ddr sdram only and are computed from values specified in the 256mb (64 meg x 4) component data sheet parameter/condition symbol -335 -26a -265 units operating one bank active-precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 1 2,322 2,232 2,232 ma operating one bank active-read-precharge current: bl = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd 1 1 3,132 2,682 2,682 ma precharge power-down standby current: all device banks idle; power- down mode; t ck = t ck (min); cke = low i dd 2p 2 144 144 144 ma idle standby current: cs# = high; all device banks idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle; v in =v ref for dq, dm, and dqs i dd 2f 2 1,800 1,620 1,620 ma active power-down standby current: one device bank active; power- down mode; t ck = t ck (min); cke = low i dd 3p 2 1,080 900 1,080 ma active standby current: cs# = high; cke = high; one device bank active ; t rc = t ras (max); t ck = t ck (min); dq, dm, and dq s inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd 3n 2 2,160 1,800 1,800 ma operating burst read current: bl = 2; continuous burst reads; one device bank active; address and con trol inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 2 3,222 2,772 2,772 ma operating burst write current: bl = 2; continuous burst writes; one device bank active; address and con trol inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 2 3,222 2,772 2,772 ma auto refresh current t refc = t rfc (min) i dd 5 2 9,180 8,460 8,820 ma t refc = 15.625s i dd 5a 2 216 216 216 ma self refresh current: cke 0.2v i dd 6 2 144 144 144 ma operating bank interleave read current: four device bank interleaving reads (bl = 4) with auto precharge; t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read or write commands i dd 7 1 7,452 6,372 6,642 ma
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 12 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm electrical specifications notes: 1. value calculated as one mo dule rank in this op erating condition; all other module ranks in i dd 2p (cke low) mode. 2. value calculated reflects all module ranks in this operating condition. table 11: i dd specifications an d conditions ? 2gb values are for the mt46v128m4 ddr sdram only an d are computed from values specified in the 512mb (128 meg x 4) component data sheet parameter/condition symbol -335 -262 -26a/ -265 units operating one bank active-precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 1 2,430 2,430 2,160 ma operating one bank active-read-precharge current: bl = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd 1 1 2,970 2,970 2,700 ma precharge power-down standby current: all device banks idle; power- down mode; t ck = t ck (min); cke = low i dd 2p 2 180 180 180 ma idle standby current: cs# = high; all device banks idle; t ck = t ck (min); cke = high; address and other control inputs changing once pe r clock cycle; v in =v ref for dq, dm, and dqs i dd 2f 2 1,620 1,620 1,440 ma active power-down standby current: one device bank active; power-down mode; t ck = t ck (min); cke = low i dd 3p 2 1,260 1,260 1,080 ma active standby current: cs# = high; cke = high; one device bank active ; t rc = t ras (max); t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd 3n 2 1,800 1,800 1,620 ma operating burst read current: bl = 2; continuous burst reads; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 1 3,060 3,060 2,700 ma operating burst write current: bl = 2; continuous burst writes; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 1 3,240 2,880 2,520 ma auto refresh current t refc = t rfc (min) i dd 5 2 10,440 10,440 10,080 ma t refc = 7.8125s i dd 5a 2 360 360 360 ma self refresh current: cke 0.2v i dd 6 2 180 180 180 ma operating bank interleave read current: four device bank interleaving reads (bl = 4) with auto precharge; t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read or write commands i dd 7 1 7,380 7,290 6,390 ma
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 13 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm electrical specifications notes: 1. value calculated as one mo dule rank in this op erating condition; all other module ranks in i dd 2p (cke low) mode. 2. value calculated reflects all module ranks in this operating condition. table 12: i dd specifications an d conditions ? 4gb values are for the mt46v256m4 ddr sdram only an d are computed from values specified in the 1gb (256 meg x 4) component data sheet parameter/condition symbol -335 -26a/ -265 units operating one bank active-precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 1 3,060 2,790 ma operating one bank active-read-precharge current: bl = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd 1 1 3,690 3,420 ma precharge power-down standby current: all device banks idle; power-down mode; t ck = t ck (min); cke = low i dd 2p 2 360 360 ma idle standby current: cs# = high; all device banks idle; t ck = t ck (min); cke = high; address and other control inputs changing once pe r clock cycle; v in =v ref for dq, dm, and dqs i dd 2f 2 2,340 2,160 ma active power-down standby current: one device bank active; power-down mode; t ck = t ck (min); cke = low i dd 3p 2 1,260 1,080 ma active standby current: cs# = high; cke = high; one device bank active ; t rc = t ras (max); t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd 3n 2 1,800 1,620 ma operating burst read current: bl = 2; continuous burst reads; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 1 4,140 3,780 ma operating burst write current: bl = 2; continuous burst writes; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 1 4,320 3,960 ma auto refresh current t refc = t rfc (min) i dd 5 2 12,240 11,880 ma t refc = 7.8125s i dd 5a 2 360 360 ma self refresh current: cke 0.2v i dd 6 2 324 324 ma operating bank interleave read current: four device bank interleaving reads (bl = 4) with auto precharge; t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read or write commands i dd 7 1 9,630 8,910 ma
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 14 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm register and pll specifications register and pll specifications notes: 1. timing and switchin g specifications for the re gister listed are critical for proper operation of the ddr sdram rdimms. these are meant to be a subset of the parameters for the spe- cific device used on the module. detailed inform ation for this register is available in jedec standard jesd82. table 13: register specifications sstv16859 devices or equivalent jesd82-4b parameter symbol pins condition min max units dc high-level input voltage v ih ( dc ) address, control, command sstl_25 v ref ( dc ) + 150 ? mv dc low-level input voltage v il ( dc ) address, control, command sstl_25 ? v ref ( dc ) - 150 mv ac high-level input voltage v ih ( ac ) address, control, command sstl_25 v ref ( dc ) + 310 v dd mv ac low-level input voltage v il ( ac ) address, control, command sstl_25 ? v ref ( dc ) - 310 mv output high voltage v oh parity output lvcmos v dd - 0.2 ? v output low voltage v ol parity output lvcmos ? 0.2 v input current i i all pins v i = v dd q or v ss q?5.0 +5.0a static standby i dd all pins reset# = v ss q (i o = 0) ? 100 a static operating i dd all pins reset# = v ss q; v i = v ih ( ac ) or v il ( dc ) i o = 0 ?varies by manufacturer ma dynamic operating (clock tree) i ddd n/a reset# = v dd , v i = v ih ( ac ) or v il ( ac ), i o = 0; ck and ck# switching 50% duty cycle ?varies by manufacturer a dynamic operating (per each input) i ddd n/a reset# = v dd , v i = v ih ( ac ) or v il ( ac ), i o = 0; ck and ck# switching 50% duty cycle; one data input switching at t ck/2, 50% duty cycle ?varies by manufacturer a input capacitance (per device, per pin) c i all inputs except reset# v i = v ref 250mv; v dd q = 1.8v 2.5 3.5 pf input capacitance (per device, per pin) c i reset# v i = v dd q or v ss q?varies by manufacturer pf
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 15 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm register and pll specifications notes: 1. pll timing and switching specifications ar e critical for proper operation of the ddr dimm. this is a subset of parameters for the specific pll used. detailed pll in formation is available in jedec standard jesd82-1a. table 14: pll specifications cvf857 device or eq uivalent jesd82-1a parameter symbol min max units dc high-level input voltage v ih 1.7 v dd q + 0.3 v dc low-level input voltage v il ?0.3 0.7 v input voltage (limits) v in ?0.3 v dd q + 0.3 v input differential-pair cross voltage v ix (v dd q/2) - 0.2 (v dd q/2) + 0.2 v input differential voltage v id ( dc )0.36 v dd q + 0.6 v input differential voltage v id ( ac )0.70 v dd q + 0.6 v input current i i ?10 +10 a dynamic supply current i ddpd ? 200 a dynamic supply current i ddq ? 300 a dynamic supply current i add ?12ma input capacitance c in 2.0 3.5 pf table 15: pll clock driver timing requirements and switching characteristics parameter symbol min max units stabilization time t l ? 100 s input clock slew rate t slr(i) 1.0 4.0 v/ns ssc modulation frequency ? 30 50 khz ssc clock input frequency deviation ? 0 ?0.50 % pll loop bandwidth (?3db from unity gain) ? 2.0 ? mhz
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 16 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm serial presence-detect serial presence-detect notes: 1. to avoid spurious start and stop conditions, a minimum delay is placed between scl = 1 and the falling or rising edge of sda. 2. this parameter is sampled. 3. for a restart condition or following a write cycle. 4. the spd eeprom write cycle time ( t wrc) is the time from a vali d stop condition of a write sequence to the end of the eeprom intern al erase/program cycl e. during the write cycle, the eeprom bus interface circuit is disabled, sda rema ins high due to pull-up resis- tance, and the eeprom does not respond to its slave address. serial presence-detect data for the latest serial presence-detec t data, refer to micron?s spd page: www.micron.com/spd . table 16: serial presence-detect eeprom dc operating conditions parameter/condition symbol min max units supply voltage v ddspd 2.3 3.6 v input high voltage: logic 1; all inputs v ih v ddspd 0.7 v ddspd + 0.5 v input low voltage: logic 0; all inputs v il ?1.0 v ddspd 0.3 v output low voltage: i out = 3ma v ol ?0.4v input leakage current: v in = gnd to v dd i li ?10a output leakage current: v out = gnd to v dd i lo ?10a standby current: scl = sda = v dd ? 0.3v; all other inputs = v ss or v dd i sb ?30a power supply current: scl clock frequency = 100 khz i cc ?2.0ma table 17: serial presence-detect eeprom ac operating conditions parameter/condition symbol min max units notes scl low to sda data-out valid t aa 0.2 0.9 s 1 time the bus must be free before a new transition can start t buf 1.3 ? s data-out hold time t dh 200 ? ns sda fall time t f ? 300 ns 2 sda rise time t r ? 300 ns 2 data-in hold time t hd:dat 0 ? s start condition hold time t h:sta 0.6 ? s clock high period t high 0.6 ? s noise suppression time con stant at scl, sda inputs t i?50ns clock low period t low 1.3 ? s scl clock frequency f scl ? 400 khz data-in setup time t su:dat 100 ? ns start condition setup time t su:sta 0.6 ? s 3 stop condition setup time t su:sto 0.6 ? s write cycle time t wrc ? 10 ms 4
pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 17 ?2003 micron technology, inc. all rights reserved 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm module dimensions module dimensions figure 5: 184-pin ddr rdimm ? standard height, 43.18mm (1.7in) notes: 1. all dimensions are in millimeters (i nches); max/min or typical (typ) where noted. 2. the dimensional diagram is fo r reference only. refer to the jedec mo document for addi- tional design dimensions. front view 1.37 (0.054) 1.17 (0.04 6 ) 6 .81 (0.2 6 8) max u1 u2 u3 u4 u5 u 6 u7 u8 u9 u11 u12 u13 ba c k view u14 u15 u1 6 u17 u18 u19 u20 u21 u22 43.33 (1.70 6 ) 43.03 (1. 6 94) pin 1 17.8 (0.7) typ 2.5 (0.098) d (2x) 2.3 (0.091) typ 6 .35 (0.25) typ 120. 6 5 (4.75) typ 1.27 (0.05) typ 2.2 (0.087) typ 1.02 (0.04) typ 2.0 (0.079) r (4x) 0.9 (0.035) r pin 92 133.5 (5.25 6 ) 133.2 (5.244) 6 4.77 (2.55) typ 49.53 (1.95) typ 10.0 (0.39) typ pin 184 pin 93 3.8 (0.15) typ 73.3 (2.88) typ
8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 prodmktg@micron.com www.micron.com customer comment line: 800-932-4992 micron, the m logo, and the micron logo are trademarks of micron technology, inc. this data sheet contains minimum and maximum limits specified ov er the power supply and temperat ure range set forth herein. alt hough considered final, these specifications are subject to change, as further product development and data characterization sometime s occur. 1gb, 2gb, 4gb (x72, ecc, dr) 184-pin ddr rdimm module dimensions pdf: 09005aef809d5451/source: 09005aef807da325 micron technology, inc., reserves the right to change products or specifications without notice. dd36c128_256_512x72.fm - rev. f 6/08 en 18 ?2003 micron technology, inc. all rights reserved. figure 6: 184-pin ddr rdimm ? low profile, 43.18mm (1.2in) notes: 1. all dimensions are in millimeters (i nches); max/min or typical (typ) where noted. 2. the dimensional diagram is fo r reference only. refer to the jedec mo document for addi- tional design dimensions. 1.37 (0.054) 1.17 (0.04 6 ) 0.2 6 8 ( 6 .81) max front view u1 u2 u3 u4 u19 u20 u5 u 6 u7 u8 u9 ba c k view u10 u11 u12 u13 u14 u21 u22 u15 u1 6 u17 u18 30. 6 3 (1.20 6 ) 30.48 (1.194) pin 1 17.8 (0.7) typ 2.5 (0.098) d (2x) 2.3 (0.091) typ 6 .35 (0.25) typ 120. 6 5 (4.75) typ 1.27 (0.05) typ 2.2 (0.087) typ 1.02 (0.04) typ 2.0 (0.079) r (4x) 0.9 (0.035) r pin 92 133.5 (5.25 6 ) 133.2 (5.244) 6 4.77 (2.55) typ 49.53 (1.95) typ 10.0 (0.39) typ pin 184 pin 93 3.8 (0.15) typ 73.3 (2.88) typ

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