FC8V33030L embossed type (thermo-compression sealing): 3 000 pcs / reel (standard) note: *1 device mounted on a glass-epoxy board (see figure 1) *2 pulse test: ensure that the channel temperature does not exceed 150 c. publication date: october 2012 ver. bed v w channel temperature tch power dissipation (steady state) *1 1 power dissipation (t=10s) *1 1.5 pd c symbol rating unit drain-source voltage vds 33 v parameter fet1 fet2 20 vgs gate-source voltage 1. source(fet1) 5. drain(fet2) 2. gate(fet1) 6. drain(fet2) 3. source(fet2) 7. drain(fet1) 4. gate(fet2) 8. drain(fet1) 2. gate(fet1) 6. drain(fet2) pin name 4. gate(fet2) 8. drain(fet1) internal connection panasonic D wmini8-f1 code ? packaging dual nch mos 33 v (individual) unit: mm ? marking symbol:6a (eu rohs / ul-94 v-0 / msl:level 1 compliant) 3. source(fet2) 7. drain(fet1) 1. source(fet1) 5. drain(fet2) y high-speed switching :qg = 3.8 nc y halogen-free / rohs compliant ? features y low drain-source on resistance:rds(on)typ. = 22 m (vgs = 4.5 v) FC8V33030L dual n-channel mosfet for dc-dc converter FC8V33030L 1 jeita sc-115 ? basic part number 26 source current (pulsed) (body diode) *1,2 isp (bd) 6.5 overall a drain current (pulsed) *1,2 idp 8 drain current (steady state) *1 6.5 drain current (t=10s) *1 id c 150 storage temperature range tstg -55 to +150 ? absolute maximum ratings ta = 25 c fr-4 (unit: mm) 25.4 x 25.4 x 0.8 (figure 1) glass-epoxy board 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 fet1 fet2
? electrical characteristics ta = 25 c 3 c static characteristics note *1 pulse test: ensure that the channel temperature does not exceed 150 c d y namic characteristics bod y diode characteristic note *1 pulse test: ensure that the channel temperature does not exceed 150 c ver. bed rds(on)1 rds(on)2 input capacitance ciss output capacitance coss tr crss reverse transfer capacitance vdd = 15 v, vgs = 0 to 10 v 50 8 id = 3.3 a (figure 2) v 33 id = 1 ma, vgs = 0 v 10 m 2 70 360 3 pf a unit parameter min. typ. max. FC8V33030L vdss zero gate voltage drain current idss symbol conditions vds = 33 v, vgs = 0 v vgs = 16 v, vds = 0 v igss vth gate-source leakage current 20 id = 3.3 a, vgs = 4.5 v 15 1 id = 0.48 ma, vds = 10 v a 2.5 v 10 id = 3.3 a, vgs = 10 v vds = 10 v, vgs = 0 v, f = 1 mhz id = 3.3 a (figure 2) drain-source breakdown voltage gate-source threshold voltage 22 35 diode forward voltage *1 vsd turn-on delay time td(on) rise time gate-drain charge qgd drain-source on-state resistance *1 ns turn-off delay time td(off) vdd = 15 v, vgs = 10 to 0 v 24 fall time tf 9 total gate charge qg vdd = 15 v, vgs = 0 to 4.5 v, id = 6.5 a 3.8 1.6 nc gate-source charge qgs 1.4 v is = 3.3 a, vgs = 0 v 0.8 1.2
ver. bed FC8V33030L 3 vdd = 15 v vout vin vin 0v 10v pw = 10 s d.c. 1 % d s g 50 10 % 90 % 90 % 10 % 90 % 10 % vin vout td(on) tr td(off) tf (figure 2) measuremet circuit for turn-on delay time/rise time/turn-off delay time/fall time id =3.3a
ver. bed dynamic input/output characteristics 4 id - vds id - vgs vds - vgs rds(on) - id capacitance - vds FC8V33030L 0 1 2 3 4 5 6 0 0.1 0.2 0.3 drain-source voltage vds (v) drain current id (a) vgs = 10.0 v 4.5 v 4.0 v 3.5 v 3.0 v 0 1 2 3 01234 gate-source voltage vgs (v) drain current id (a) ta = 85 c -30 c 25 c 0 0.05 0.1 0.15 0.2 0.25 0.3 0246810 gate-source voltage vgs (v) drain-source voltage vds (v) 0.83 a 1.65 a id = 3.3 a 1 10 100 110 drain current id (a) drain-source on-state resistance rds(on) (m ) 10.0 v vgs = 4.5 v 10 100 1000 10000 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss 0 1 2 3 4 5 012345 total gate charge qg (nc) gate-source voltage vgs (v) vdd = 15 v
ver. bed FC8V33030L safe operating area 5 vth - ta rds(on) - ta pd - ta rth -tsw 0 1 2 3 4 -50 0 50 100 150 temperature ta ( c) gate-source threshold voltage vth (v) 0 5 10 15 20 25 30 35 40 45 50 -50 0 50 100 150 200 temperature ta ( c) drain-source on-state resistance rds(on) (m ) 10.0 v vgs = 4.5 v 0 0.5 1 1.5 2 0 50 100 150 temperature ta ( c) total power dissipation pd (w) 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( c/w) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) idp = 26 a operation in this area is limited by rds(on) ta = 25 c, glass epoxy board (25.4 25.4 t0.8 mm) coated with copper foil,which has more than 300 mm 2 . 100 ms 1 s dc 1 ms 10 ms device mounted on a glass-epoxy board (25.4 x 25.4 x 0.8 mm)
ver. bed 6 FC8V33030L wmini8-f1 unit: mm ? land pattern (reference) (unit: mm)
request for your special attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) the technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. no license is granted in and to any intellectual property right or other right owned by panasonic corporation or any other company. therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) the products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. it is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) the products and product specifications described in this book are subject to change without notice for modification and/or im- provement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (esd, eos, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. when using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) this book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202
|
