![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
the information in this document is subject to change without notice. n-channel gaas mesfet NEZ1011-5E, nez1414-5e 5w x, ku-band power gaas mesfet 1998 ? document no. p13728ej1v0ds00 (1st edition) date published september 1998 n cp(k) printed in japan data sheet description the NEZ1011-5E and nez1414-5e are power gaas mesfets which provide high gain, high efficiency and high output in x, ku-band. the internal input and output matching enables guaranteed performance to be achieved with only a 50 w external circuit. to reduce thermal resistance the device has a phs (plated heat sink) structure. the device incorporates a wsi (tungsten silicide) gate structure for high reliability. features ? high output power : p o (1 db) = +37.0 dbm typ. ? high linear gain : 8.0 db typ. (nec1011-5e), 7.0 db typ. (nez1414-5e) ? high efficiency : 30 % typ. ? input and output internally matched for optimum performance ordering information part number package NEZ1011-5E nez1414-5e t-78 remark to order evaluation samples, please contact your local nec sales office. (part number for sample order: NEZ1011-5E, nez1414-5e) absolute maximum ratings (t a = 25c) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 15 v gate to source voltage v gs C7 v drain current i ds 4.5 (NEZ1011-5E) 5.0 (nez1414-5e) a gate forward current i gf +40 ma gate reverse current i gr C40 ma total power dissipation p t 30 w channel temperature t ch 175 c storage temperature t stg C65 to +175 c caution please handle this device at static-free workstation, because this is an electrostatic sensitive device.
2 NEZ1011-5E, nez1414-5e recommended operating limits characteristics symbol test condition min. typ. max. unit drain to source voltage v ds 10 10 10 v gain compression gcomp 3 db channel temperature t ch +130 c gate resistance note r g 25 50 50 w note r g is the series resistance between the gate supply and the fet gate. [NEZ1011-5E] electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit saturated drain current i dss v ds = 1.5 v, v gs = 0 v 1.5 3.0 5.0 a pinch-off voltage v p v ds = 2.5 v, i ds = 20 ma C3.0 C1.3 C0.5 v gate to drain breakdown voltage bv gd i gd = 20 ma 15 18 v thermal resistance r th channel to case 4.5 5.0 c/w linear gain g l 7.5 8.0 db output power at 1 db gain comp. p o (1 db) 36.0 37.0 dbm drain current at 1 db gain comp. i ds (1 db) 2.0 2.3 a power added efficiency at 1 db gain compression point h add (1 db) f = 10.7, 11.2, 11.7 ghz v ds = 10 v i ds = 1.5 a (rf off) r g = 50 w 30 % [nez1414-5e] electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit saturated drain current i dss v ds = 1.5 v, v gs = 0 v 1.0 3.2 5.0 a pinch-off voltage v p v ds = 2.5 v, i ds = 20 ma C3.0 C1.3 C0.5 v gate to drain breakdown voltage bv gd i gd = 20 ma 15 18 v thermal resistance r th channel to case 4.5 5.0 c/w linear gain g l 6.5 7.0 db output power at 1 db gain comp. p o (1 db) 36.0 37.0 dbm drain current at 1 db gain comp. i ds (1 db) 2.0 2.3 a power added efficiency at 1 db gain compression point h add (1 db) f = 14.0 to 14.5 ghz v ds = 10 v i ds = 1.5 a (rf off) r g = 50 w 30 % 3 NEZ1011-5E, nez1414-5e [NEZ1011-5E] typical characteristics (t a = 25c) +35 +30 +25 100 80 60 40 20 0 +20 +25 +30 p out - output power - dbm add - efficiency - % h p in - input power - dbm test conditions v ds i ds : 10 (v) : 1.5 (a) output power, drain current and efficiency vs. input power add h p out 4 NEZ1011-5E, nez1414-5e [NEZ1011-5E] typical s-parameters v ds = 10 v, i ds = 1.5 a marker start 9.5 ghz, stop 13 ghz, step 100 mhz 1: 10.7 ghz 2: 11.7 ghz +90 +135 +45 180 0 ?35 ?0 ?5 2 1 2 1 +90 +135 +45 180 0 ?35 ?0 ?5 2 1 2 1 1.0 0.5 2.0 0 ?.5 ?.0 ?.0 1.0 0.5 2.0 0 ?.5 ?.0 ?.0 s 11 s 12 s 21 s 22 r max = 1 r max = 0.25 r max = 5 r max = 1 5 NEZ1011-5E, nez1414-5e [NEZ1011-5E] typical s-parameters mag. and ang. v ds = 10 v, i ds = 1.5 a frequency s 11 s 12 s 21 s 22 ghz mag.ang.mag.ang.mag.ang.mag.ang. (deg.) (deg.) (deg.) (deg.) 9.50 9.60 9.70 9.80 9.90 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 0.795 0.791 0.783 0.774 0.765 0.751 0.734 0.715 0.695 0.676 0.653 0.636 0.612 0.594 0.575 0.552 0.535 0.508 0.491 0.461 0.436 0.404 0.366 0.332 0.298 0.277 0.277 0.294 0.332 0.386 0.432 0.481 0.527 0.572 0.608 0.640 177.097 166.158 155.492 144.184 133.012 121.078 109.490 97.542 86.492 75.113 64.124 53.940 43.369 33.428 22.866 13.083 2.903 C7.593 C17.574 C28.983 C39.932 C53.797 C67.625 C84.471 C104.679 C127.328 C155.200 179.432 156.155 136.598 121.126 107.861 96.419 87.008 77.455 69.455 0.025 0.025 0.021 0.017 0.016 0.012 0.012 0.015 0.018 0.023 0.027 0.033 0.038 0.042 0.047 0.050 0.055 0.059 0.062 0.067 0.073 0.075 0.086 0.086 0.091 0.097 0.089 0.096 0.091 0.087 0.097 0.088 0.093 0.097 0.073 0.077 C12.624 C30.059 C49.370 C73.646 C97.929 C135.797 C174.066 147.007 115.190 95.322 74.089 56.001 39.778 23.174 7.059 C7.479 C19.924 C34.841 C47.246 C59.558 C74.611 C87.343 C103.128 C117.892 C133.955 C149.424 C164.876 178.362 165.150 150.149 131.057 119.739 103.730 86.355 73.273 53.973 2.102 2.238 2.311 2.405 2.534 2.539 2.502 2.564 2.529 2.516 2.529 2.507 2.484 2.478 2.450 2.447 2.482 2.473 2.454 2.516 2.506 2.487 2.488 2.524 2.495 2.484 2.444 2.318 2.256 2.158 2.043 1.910 1.812 1.687 1.539 1.531 C104.596 C121.060 C134.131 C146.297 C163.554 C179.266 165.681 150.428 135.648 121.356 106.739 92.067 78.134 64.151 49.875 36.338 22.306 7.750 C5.943 C20.088 C35.678 C50.074 C63.579 C80.559 C96.940 C112.774 C128.256 C147.074 C161.800 C176.089 166.479 150.431 135.781 121.963 107.849 94.247 0.497 0.474 0.450 0.425 0.400 0.375 0.352 0.333 0.320 0.306 0.302 0.304 0.307 0.312 0.320 0.325 0.327 0.330 0.328 0.323 0.318 0.304 0.291 0.273 0.250 0.225 0.194 0.162 0.131 0.108 0.103 0.116 0.143 0.177 0.213 0.250 C97.121 C106.699 C116.031 C126.474 C138.312 C150.582 C164.453 C179.454 164.767 149.021 133.607 118.951 104.803 91.645 79.861 69.008 58.242 48.324 38.476 29.580 20.003 10.526 1.340 C8.817 C19.520 C31.204 C45.526 C62.370 C83.016 C110.989 C144.299 C175.501 160.657 142.955 129.094 117.013 6 NEZ1011-5E, nez1414-5e [nez1414-5e] typical characteristics (t a = 25c) +35 +30 +25 +20 +35 +25 +30 p out - output power - dbm p in - input power - dbm test conditions v ds i ds : 10 (v) : 1.5 (a) output power, drain current and efficiency vs. input power p out add h 80 70 60 50 40 30 20 10 0 add - efficiency - % h 7 NEZ1011-5E, nez1414-5e [nez1414-5e] typical s-parameters v ds = 10 v, i ds = 1.5 a marker start 12.5 ghz, stop 16 ghz, step 100 mhz 1: 14.0 ghz 2: 14.5 ghz +90 +135 +45 180 0 ?35 ?0 ?5 2 1 2 1 +90 +135 +45 180 0 ?35 ?0 ?5 2 1 1 1.0 0.5 2.0 0 ?.5 ?.0 ?.0 1.0 0.5 2.0 0 ?.5 ?.0 ?.0 s 11 s 12 s 21 s 22 r max = 1 r max = 0.25 r max = 5 r max = 1 2 8 NEZ1011-5E, nez1414-5e [nez1414-5e] typical s-parameters mag. and ang. v ds = 10 v, i ds = 1.5 a frequency s 11 s 12 s 21 s 22 ghz mag.ang.mag.ang.mag.ang.mag.ang. (deg.) (deg.) (deg.) (deg.) 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 15.0 15.1 15.2 15.3 15.4 15.5 15.6 15.7 15.8 15.9 16.0 0.699 0.695 0.690 0.681 0.672 0.655 0.639 0.611 0.588 0.557 0.522 0.484 0.452 0.414 0.374 0.340 0.309 0.292 0.278 0.286 0.306 0.338 0.380 0.422 0.472 0.516 0.564 0.604 0.643 0.679 0.711 0.745 0.772 0.801 0.825 0.849 3.559 C3.802 C11.184 C18.618 C26.662 C34.582 C42.797 C51.193 C59.626 C69.196 C77.096 C86.960 C97.571 C109.286 C121.896 C137.204 C153.071 C172.490 166.873 145.748 124.347 105.283 87.665 71.876 57.486 44.460 32.150 20.796 10.574 0.953 C7.486 C15.456 C22.622 C29.497 C35.121 C40.556 0.031 0.034 0.037 0.039 0.037 0.041 0.041 0.041 0.061 0.055 0.078 0.073 0.078 0.076 0.077 0.077 0.077 0.079 0.082 0.086 0.083 0.089 0.085 0.081 0.082 0.075 0.071 0.068 0.064 0.061 0.061 0.056 0.054 0.051 0.047 0.044 C41.913 C52.127 C67.308 C88.046 C84.384 C102.427 C112.704 C126.775 C139.703 C158.117 C166.125 179.398 153.313 147.461 118.899 107.834 96.178 78.839 70.581 56.694 39.400 26.464 7.358 C11.616 C24.978 C44.832 C53.732 C68.262 C80.913 C91.417 C107.934 C119.624 C134.763 C146.936 C160.342 C173.424 1.697 1.654 1.764 1.795 1.800 1.927 1.970 2.096 2.067 2.049 2.307 2.370 2.129 2.228 2.190 2.090 2.123 2.219 2.221 2.121 2.125 2.109 2.035 1.993 1.933 1.821 1.697 1.609 1.494 1.385 1.277 1.184 1.103 1.013 0.931 0.867 C20.548 C36.716 C42.190 C50.520 C68.967 C79.629 C94.358 C113.946 C125.912 C138.219 C152.954 C162.851 C179.398 166.598 153.662 136.741 123.419 107.969 91.922 76.787 61.811 47.575 32.601 17.984 1.611 C14.908 C30.531 C45.413 C61.564 C76.676 C89.461 C102.706 C116.634 C129.176 C142.415 C154.460 0.566 0.540 0.514 0.488 0.461 0.434 0.407 0.379 0.353 0.327 0.304 0.279 0.260 0.239 0.221 0.207 0.196 0.189 0.184 0.182 0.182 0.185 0.188 0.192 0.196 0.199 0.204 0.205 0.206 0.204 0.199 0.194 0.185 0.174 0.159 0.146 152.460 146.569 140.115 134.089 126.832 119.491 111.931 103.332 94.382 84.364 74.656 63.510 50.342 37.056 22.479 7.390 C7.712 C23.544 C39.366 C54.746 C69.708 C84.246 C97.425 C109.879 C121.259 C131.271 C141.090 C149.703 C157.952 C165.427 C172.212 C179.138 174.393 166.875 158.567 149.601 9 NEZ1011-5E, nez1414-5e package dimensions (unit: mm) 8.25 0.15 gate 9.7 0.13 drain 13 0.1 16.5 0.13 r 0.65 2.74 0.1 source 1.8 0.1 0.2 max. 3.0 0.2 9 0.3 10 NEZ1011-5E, nez1414-5e recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol partial heating pin temperature: 260c time: 5 seconds or less (per pin row) C for details of recommended soldering conditions, please contact your local nec sales office. 11 NEZ1011-5E, nez1414-5e [memo] NEZ1011-5E, nez1414-5e caution the great care must be taken in dealing with the devices in this guide. the reason is that the material of the devices is gaas (gallium arsenide), which is designated as harmful substance according to the law concerned. keep the law concerned and so on, especially in case of removal. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5 |
Price & Availability of NEZ1011-5E
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |