tc75s51f/fu/fe 2002-02-20 1 toshiba cmos linear integrated circuit silicon monolithic tc75s51f,TC75S51FU,tc75s51fe single operational amplifier the tc75s51f/TC75S51FU/tc75s51fe is a cmos single- operation amplifier which incorporates a phase compensation circuit. it is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. features ? low-voltage operation : v dd = 0.75~3.5 v or 1.5~7 v ? low-current power supply : i dd (v dd = 3 v) = 60 a (typ.) ? built-in phase-compensated op-amp, obviating the need for any external device ? ultra-compact package maximum ratings (ta = = = = 25c) characteristics symbol rating unit supply voltage v dd , v ss 7 v differential input voltage dv in 7 v input voltage v in v dd ~v ss v tc75s51f/fu 200 power dissipation tc75s51fe p d 100 mw operating temperature t opr ? 40~85 c storage temperature t stg ? 55~125 c tc75s51f TC75S51FU tc75s51fe weight ssop5-p-0.95 : 0.014 g (typ.) ssop5-p-0.65a : 0.006 g (typ.) son5-p-0.50 : 0.003 g (typ.)
tc75s51f/fu/fe 2002-02-20 2 marking (top view) pin connection (top view) electrical characteristics dc characteristics (v dd = = = = 3.0 v, v ss = = = = gnd, ta = = = = 25c) characteristics symbol test circuit test condition min typ. max unit input offset voltage v io 1 r s = 1 k ?, r f = 100 k ? ? 2 10 mv input offset current i io ? ? ? 1 ? pa input bias current i i ? ? ? 1 ? pa common mode input voltage cmv in 2 r s = 1 k ?, r f = 100 k ? 0 ? 2.5 v voltage gain (open loop) g v ? ? 60 70 ? db v oh 3 r l > = 100 k ? 2.9 ? ? maximum output voltage v ol 4 r l > = 100 k ? ? ? 0.1 v common mode input signal rejection ratio cmrr 2 v in = 0.0~2.5 v 55 65 ? db supply voltage rejection ratio svrr 1 v dd = 1.5~7.0 v 60 70 ? db supply current i dd 5 ? ? 60 200 a dc characteristics (v dd = = = = 1.5 v, v ss = = = = gnd, ta = = = = 25c) characteristics symbol test circuit test condition min typ. max unit input offset voltage v io 1 r s = 10 k ?, r f = 100 k ? ? 2 10 mv input offset current i io ? ? ? 1 ? pa input bias current i i ? ? ? 1 ? pa common mode input voltage cmv in 2 r s = 10 k ?, r f = 100 k ? 0 ? 1.0 v voltage gain (open loop) g v ? ? 60 70 ? db v oh 3 r l > = 100 k ? 1.4 ? ? maximum output voltage v ol 4 r l > = 100 k ? ? ? 0.1 v supply current i dd 5 ? ? 50 150 a note: for this device, please use a source current of no more than 70 a. v dd 5 in ( ? ) 4 1 3 v ss 2 out in ( + ) s c 4 5 3 1 2
tc75s51f/fu/fe 2002-02-20 3 ac characteristics (v dd = = = = 3.0 v, v ss = = = = gnd, ta = = = = 25c) characteristics symbol test circuit test condition min typ. max unit slew rate sr ? a v = 0 db ? 0.5 ? v/ s unity gain cross frequency f t ? a v = 40 db ? 0.6 ? mhz ac characteristics (v dd = = = = 1.5 v, v ss = = = = gnd, ta = = = = 25c) characteristics symbol test circuit test condition min typ. max unit slew rate sr ? a v = 0 db ? 0.3 ? v/ s unity gain cross frequency f t ? a v = 40 db ? 0.5 ? mhz test circuit 1. svrr, v io 2. cmrr, cmv in v out v dd r f r f r s r s v dd /2 v out v dd r f r f r s r s v dd /2 v in ? svrr for each of the two v dd values, measure the v out value, as indicated below, and calculate the value of svrr using the equation shown. when v dd = 1.5 v, v dd = v dd 1 and v out = v out 1 when v dd = 7.0 v, v dd = v dd 2 and v out = v out 2 s r f r s r 2 v dd 1 v dd 2 v out 1 v out og 20 svrr ? ? ? ? ? ? ? ? + ? ? = l ? v io measure the value of v out and calculate the value of v io using the following equation. s r f r s r 2 v dd v out v io + ? ? ? ? ? ? ? ? ? = ? cmrr measure the v out value, as indicated below, and calculate the value of the cmrr using the equation shown. when v in = 0.0 v, v in = v in 1 and v out = v out 1 when v in = 2.5 v, v in = v in 2 and v out = v out 2 s r f r s r 2 v in 1 v in 2 v out 1 v out og 20 cmrr ? ? ? ? ? ? ? ? + ? ? = l ? cmv in input range within which the cmrr specification guarantees v out value (as varied by the v in value).
tc75s51f/fu/fe 2002-02-20 4 3. v oh 4. v ol 5. i dd v oh v dd r l v in2 v in1 v ol v dd r l v in2 v in1 v dd v dd /2 m i dd ? v oh v 0.05 2 v dd v in1 ? = v 0.05 2 v dd v in2 + = ? v ol v 0.05 2 v dd v in1 + = v 0.05 2 v dd v in2 ? =
tc75s51f/fu/fe 2002-02-20 5 g v ? f voltage gain g v (db) 120 10 frequency f (hz) 80 40 0 100 1 k 10 k 100 k 1 m 10 m v dd = 3 v v ss = gnd ta = 25c supply current i dd (ma) load resistance r l ( ? ) 0 1 m supply voltage v dd (v) r l ? v dd 100 k 10 k 1 2 3 4 5 6 7 v ss = gnd i source = 70 a ta = 25c v oh v dd r l isource = 70 a 0 7 supply voltage v dd (v) v oh ? v dd high-level output voltage v oh (v) 1 2 4 5 0 1 2 3 4 5 6 7 v ss = gnd i source = 70 a ta = 25c 3 6 v oh v dd r l isource = 70 a supply voltage v dd (v) i dd ? v dd 0 100 20 40 60 80 v ss = gnd v in = v dd /2 ta = 25c 0 1 2 3 4 5 6 7 v dd /2 v dd m i dd
tc75s51f/fu/fe 2002-02-20 6 low-level output voltage v ol (v) v ol ? i sink 0.001 10 0.1 1 0.01 v dd = 1.5 v v ss = gnd ta = 25c 10 100 1 m 10 m sink current i sink (a) v ol ? i sink sink current i sink (a) low-level output voltage v ol (v) 0.001 10 0.1 1 0.01 v dd = 3.0 v v ss = gnd ta = 25c 10 100 1 m 10 m p d ? ta ambient temperature ta (c) power dissipation p d (mw) 300 0 ? 40 100 200 this data was obtained from an unmounted standalone ic. if the ic is mounted on a pcb, its power dissipation will be greater. note that, depending on the pcb?s thermal characteristics, the curves may differ substantially from those shown. 0 40 80 120
tc75s51f/fu/fe 2002-02-20 7 package dimensions weight: 0.014 g (typ.)
tc75s51f/fu/fe 2002-02-20 8 package dimensions weight: 0.006 g (typ.)
tc75s51f/fu/fe 2002-02-20 9 package dimensions weight: 0.003 g (typ.)
tc75s51f/fu/fe 2002-02-20 10 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the products described in this document are subject to the foreign exchange and foreign trade laws. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707eb a restrictions on product use
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