? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c26a i dm t c = 25 c, pulse width limited by t jm 104 a i ar t c = 25 c26a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g features low gate charge international standard packages epoxy meet ul 94 v-0, flammability classification low r ds (on) hdmos tm process rugged polysilicon gate cell structure avalanche energy and current rated fast intrinsic rectifier advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.25 ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain 98635d (6/02) to-247 ad (ixfh) (tab) to-268 (d3) ( ixft) (tab) g s ixfh 26n60q ixft 26n60q v dss = 600 v i d25 = 26 a r ds(on) = 0.25 ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 14 22 s c iss 5100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 560 pf c rss 210 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 32 ns t d(off) r g = 2.0 ? (external), 80 ns t f 16 ns q g(on) 150 200 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 34 nc q gd 80 nc r thjc 0.35 k/w r thck to-247 0.25 k/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline to-268 outline source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive; pulse width limited by t jm 104 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = i s -di/dt = 100 a/ s, v r = 100 v ixfh 26n60q ixft 26n60q terminals: 1 - gate 2 - drain 3 - source tab - drain
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