dual igbtmod? hvigbt module 150 amperes/4500 volts QID4515002 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 09/12 rev. 9 outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.89 48.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: ? low v ce(sat) ? creepage and clearance meet iec 60077-1 ? high isolation voltage ? rugged swsoa and rrsoa ? compact industry standard package applications: ? traction ? medium voltage drives ? high voltage power supplies dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.44 36.5 r 0.16 4.0 s m6 metric m6 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) e b k (3typ) l (2typ) p u (5typ) t (screwing depth) q 5 4 1 2 3 4 5 6 7 8 f f d a c
QID4515002 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 09/12 rev. 9 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID4515002 units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (v ge = 0v, t j = -40 to +125c) v ces 4500 volts collector-emitter voltage (v ge = 0v, t j = -50c) v ces 4400 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current, dc (t c = 82c) i c 150 amperes peak collector current (pulse) i cm 300* amperes diode forward current** i f 150 amperes diode forward surge current** (pulse) i fm 300* amperes i 2 t for diode (t = 10ms) i 2 t 10 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 1500 watts mounting torque, m6 terminal screws 44 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 900 grams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 9.0 kvolts partial discharge q pd 10 pc (v1 = 4800 v rms , v2 = 3500 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 3200v, v ge = 15v, r g(off) 60?, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.8 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 13.3ma, v ce = 10v 5.8 6.3 6.8 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c 3.8 volts i c = 150a, v ge = 15v, t j = 125c 4.6 5.5 volts total gate charge q g v cc = 2800v, i c = 150a, v ge = 15v 1.5 c emitter-collector voltage** v ec i e = 150a, v ge = 0v, t j = 25c 2.8 volts i e = 150a, v ge = 0v, t j = 125c 3.2 3.8 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (fwdi).
QID4515002 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 09/12 rev. 9 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 19 nf output capacitance c oes v ge = 0v, v ce = 10v, f = 100khz 1.22 nf reverse transfer capacitance c res 0.55 nf resistive turn-on delay time t d(on) v cc = 2800v, i c = 133a, 1.00 s load rise time t r v ge = 15v, r g(on) = 24.3?, 0.30 s switching turn-off delay time t d(off) r g(off) = 90?, l s = 150nh 3.6 s times fall time t f inductive load 0.36 s turn-on switching energy e on t j = 125c, i c = 133a, v ge = 15v, 0.55 j/p turn-off switching energy e off r g(on) = 24.3?, r g(off) = 90?, 0.34 j/p v cc = 2800v, l s = 150nh , inductive load diode reverse recovery time** t rr v cc = 2800v, i e = 133a, 0.7 s diode reverse recovery charge** q rr v ge = 15v, r g(on) = 24.3?, 111* c diode reverse recovery energy e rec l s = 150nh, inductive load 172 mj/p stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 0.083 k/w thermal resistance, junction to case*** r th(j-c) d per fwdi 0.157 k/w contact thermal resistance, case to fin r th(c-f) per module, 0.018 k/w thermal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm creepage distance along surface d s(t-b) 64 mm (terminal to base) clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips.
QID4515002 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 09/12 rev. 9 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 111.0 11.1 1.11 0.11 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c v ge = 0v t j = 25c f = 100 khz c ies c oes c res collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 8 6 0 110 55 165 220 275 0 v ge = 16v 11 15 13 10 t j = 25 c 55 110 165 220 275 0 55 110 165 220 275 0 2 4 8 6 0 55 110 165 220 275 0 4 8 16 12 0 55 110 165 220 275 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) v ge = 15v 0 5 2 4 3 1 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 0.55 2.20 1.65 1.10 v ce = 2800v i c = 133a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (j/pulse) 1.76 0.22 0.44 0.66 0.88 1.10 1.32 1.54 0 v cc = 2800v v ge = 15v r g(on) = 24.3? r g(off) = 90? l s = 150nh t j = 125c inductive load half-bridge switching energy characteristics (typical) switching energies, e on , e rec , (j/pulse) 0 18 9 27 36 45 1.32 0.22 0.44 0.66 0.88 1.10 0 1.32 0.22 0.44 0.66 0.88 1.10 0 v cc = 2800v v ge = 15v i c = 133a l s = 150nh t j = 125c inductive load gate resistance, r g , (?) half-bridge switching energy characteristics (typical) t j = 25c t j = 125c t j = 25c t j = 125c e on e off e rec e on e rec switching energies, e off ,, (j/pulse) 0 45 90 135 180 v cc = 2800v v ge = 15v i c = 133a l s = 150nh t j = 125c inductive load gate resistance, r g , (?) half-bridge switching energy characteristics (typical) e off
QID4515002 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 09/12 rev. 9 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.083k/w (igbt) r th(j-c) = 0.157k/w (fwdi) normalized transient thermal impedance, z th(j-c') free-wheel diode reverse recovery characteristics (typical) emitter current, i c , (amperes) reverse recovery time, t rr , (ns) 10 2 11.0 110 10 1 10 0 10 -1 1100.0 110.0 11.0 1.1 reverse recovery current, i rr , (amperes) 1110 i rr t rr collector current, i c , (amperes) 10 2 10 1 11.0 110 10 0 10 -1 10 -2 switching times, (ns) half-bridge switching time characteristics (typical) t d(off) t d(on) t r l s = 150nh t j = 125c inductive load v cc = 2800v v ge = 15v r g(on) = 24.3 r g(off) = 90 v cc = 2800v v ge = 15v r g(on) = 24.3 l s = 100 nh t j = 125c inductive load t f 1110 collector emitter voltage, v ces , (volts) 375 312 250 188 125 63 0 2000 1000 3000 0 collector current, i c , (amperes) reverse bias safe operating area (rbsoa) v cc 3200v v ge = 15v r g(off) = 90 t j = 125c 5000 4000 375 312 250 188 125 63 0 2000 1000 3000 0 5000 4000 1500 1250 1000 750 500 250 0 2000 1000 3000 0 5000 4000 collector emitter voltage, v ces , (volts) collector current, i c , (amperes) short circuit safe operating area (scsoa) v cc 3300v v ge = 15v r g(on) = 24.3 r g(off) = 90 t j = 125c emitter-collector voltage, v ec , (volts) reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (rrsoa) v cc 3200v di/dt < 660a/s t j = 125c
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