vn50300l/vn50300t vishay siliconix document number: 70216 s-04279?rev. d, 16-jul-01 www.vishay.com 11-1 n-channel 500-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) vn50300l 300 @ v gs = 10 v 1 to 4.5 0.033 vn50300t 500 300 @ v gs = 10 v 1 to 4.5 0.022
moderate on-resistance: 240 secondary breakdown free: 520 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature ?run-away? high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors,etc. telephone mute switches, ringer circuits power supply, converters motor control vn50300t top view to-226aa (to-92) s d g 1 2 3 g to-236 (sot-23) s d top view 2 3 1 vn50300l device marking front view ?s? vn5 0300l xxyy ?s? = siliconix logo xxyy = date code v1 = part number code for vn50300t w = week code ll = lot traceability device marking top view v1 wll
parameter symbol vn50300l vn50300t unit drain-source voltage v ds 500 500 gate-source voltage v gs 30 30 v t a = 25 c 0.033 0.022 continuous drain current (t j = 150 c) t a = 100 c i d 0.021 0.013 a pulsed drain current a i dm 0.013 0.08 t a = 25 c 0.8 0.35 power dissipation t a = 100 c p d 0.32 0.14 w thermal resistance, junction-to-ambient r thja 156 350 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature.
vn50300l/vn50300t vishay siliconix www.vishay.com 11-2 document number: 70216 s-04279 ? rev. d, 16-jul-01
limits parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 500 520 gate-threshold voltage v gs(th) v ds = v gs , i d = 10 a 1 3.5 4.5 v v ds = 0 v, v gs = 20 v 100 gate-body leakage i gss t j = 125 c 500 na v ds = 250 v, v gs = 0 v 0.05 zero gate voltage drain current i dss t j = 125 c 5 a on-state drain current b i d(on) v ds = 10 v, v gs = 10 v 15 30 ma v gs = 10 v, i d = 10 ma 250 300 drain-source on-resistance b r ds(on) v gs = 10 v, i d = 5 ma 240 t j = 125 c 450 700 forward transconductance b g fs 5 14 common source output conductance b g os v ds = 15 v, i d = 10 ma 0.005 ms dynamic input capacitance c iss 5 20 output capacitance c oss v ds = 25 v, v gs = 0 v f = 1 mhz 1.7 10 pf reverse transfer capacitance c rss f = 1 mhz 0.5 5 switching c t d(on) 4.5 8 turn-on time t r v dd = 25 v, r l = 2.5 k 7 12 t d(off) i d 10 ma, v gen = 10 v r g = 25 8 20 ns turn-off time t f 60 90 notes a. for design aid only, not subject to production testing. vndo50 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
vn50300l/vn50300t vishay siliconix document number: 70216 s-04279 ? rev. d, 16-jul-01 www.vishay.com 11-3 ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 20 0123 45 16 12 8 4 0 v gs = 10 v 6 v 5 v 4.5 v 4 v 3.5 v 5 0 0.4 0.8 1.2 1.6 2.0 4 3 2 1 0 v gs = 7 v 4 v 3.5 v 4.5 v 50 40 30 0 23 7 20 10 456 125 c 25 c v ds = 15 v t j = ? 55 c 325 300 275 200 05 25 250 225 10 15 20 v gs = 10 v 700 0 4 8 12 16 20 600 500 400 0 300 200 100 i d = 2 ma 10 ma 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 10 ma 5 ma 5 v i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
vn50300l/vn50300t vishay siliconix www.vishay.com 11-4 document number: 70216 s-04279 ? rev. d, 16-jul-01 1 10 100 100 10 1 threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (pc) t d(on) t d(off) t r t f 10 1 0.01 01 7 23456 ? 55 c v ds = 5 v 0.1 t j = 150 c 12 10 8 0 010 50 6 4 20 30 40 2 c iss c rss v gs = 0 v f = 1 mhz 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 0.1 1 100 10 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 30 25 20 0 0 25 200 15 10 50 100 150 5 v ds = 250 v 400 v v dd = 25 v r g = 25 v gs = 0 to 10 v 25 c 125 c c oss single pulse 0.01 i d = 10 ma i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns)
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