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hal114, hal115 hall effect sensor family edition dec. 20, 1999 6251-456-2ds m i c r o n a s m i c r o n a s
hal11x 2 o micr nas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 3 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 4 2. functional description 5 3. specifications 5 3.1. outline dimensions 5 3.2. dimensions of sensitive area 5 3.3. positions of sensitive areas 6 3.4. absolute maximum ratings 6 3.5. recommended operating conditions 7 3.6. electrical characteristics 8 3.7. magnetic characteristics 10 4. type descriptions 10 4.1. hal114 12 4.2. hal115 14 5. application notes 14 5.1. application circuit 14 5.2. ambient temperature 14 5.3. extended operating conditions 14 5.4. start-up behavior 16 6. data sheet history
hal11x o 3 micr nas hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal 11x family consists of different hall switches produced in cmos technology. all sensors include a temperature-compensated hall plate, a comparator, and an open-drain output transistor. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed refer- ence values (switching points). accordingly, the output transistor is switched on or off. the sensors of this family differ in the switching behavior. the sensors are designed for industrial and automotive applications and operate with supply voltages from 4.5 v to 24 v in the ambient temperature range from 40 c up to 125 c. all sensors are available in an smd-package (sot-89b) and in a leaded version (to-92ua). 1.1. features operates from 4.5 v to 24 v supply voltage overvoltage protection reverse-voltage protection at v dd -pin short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic mag- netic fields up to 20 khz stable switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics 1.2. family overview the types differ according to the mode of switching. type switching behavior see page hal114 unipolar 10 hal115 bipolar 12 bipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. unipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range k e c hal114 114k 114e 114c hal115 115k 115e 115c
hal11x 4 o micr nas 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = 40 c to +140 c e: t j = 40 c to +100 c c: t j = 0 c to +100 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.2. on page 14. 1.5. hall sensor package codes type: 11x halxxxpa-t temperature range: k, e, or c package: sf for sot-89b ua for to-92ua (so for sot-89a) type: 114 package: to-92ua temperature range: t j = 40 c to +100 c example: hal114ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: aordering codes for hall sensorso. 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. out gnd 3 2 1 v dd fig. 11: pin configuration 2. functional description the hal 11x sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to 15 v. temperature dependent bias hysteresis control comparator output v dd 1 out 3 hall plate g nd 2 fig. 21: hal11x block diagram hal11x short circuit & overvoltage protection reverse voltage & overvoltage protection
hal11x o 5 micr nas 3. specifications 3.1. outline dimensions fig. 31: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm min. 0.25 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 branded side spgs7001-7-a3/2e sensitive area top view y 123 2 4 0.2 1.53 0.05 0.125 0.7 x1 x2 note: the sot-89a package will be discontinued in 2000 and be replaced by the sot-89b package. fig. 32: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm min. 0.25 2.55 0.1 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-3-a3/2e sensitive area top view y 123 4 0.2 1.15 0.05 0.125 0.3 4.55 0.1 1.7 2 x1 x2 0.75 0.2 fig. 33: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm sensitive area 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 (2.54) 123 0.42 1.5 0.05 4.06 0.1 3.05 0.1 0.48 spgs7002-7-a/2e 3.1 0.2 x2 x1 note: for all package diagrams, a mechanical tolerance of 50 m m applies to all dimensions where no tolerance is explicitly given. 3.2. dimensions of sensitive area 0.4 mm x 0.2 mm 3.3. positions of sensitive areas sot-89a sot-89b to-92ua |x 2 x 1 | / 2 < 0.2 mm y = 0.98 mm 0.2 mm y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm
hal11x 6 o micr nas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 15 28 1) v v p test voltage for supply 1 24 2) v i dd reverse supply current 1 50 1) ma i ddz, i oz current through protection devices 1 or 3 200 3) 200 3) ma v o output voltage 3 0.3 28 1) v i o continuous output on current 3 30 1) ma i omax peak output on current 3 250 3) ma t s storage temperature range 65 150 c t j junction temperature range 40 150 c 1) as long as t j max is not exceeded 2) with a 220 w series resistor at pin 1 3) t<2 ms stresses beyond those listed in the aabsolute maximum ratingso may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the arecommended operating conditions/characteristicso of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4.5 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v r v series resistor 1) 1 270 w 1) see fig. 51 on page 14
hal11x o 7 micr nas 3.6. electrical characteristics at t j = 40 c to +140 c , v dd = 4.5 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 6 8.2 11 ma t j = 25 c i dd supply current over temperature range 1 3.9 8.2 12 ma v ol output voltage over temperature range 3 120 400 mv i ol = 12.5 ma v ol output voltage over temperature range 3 190 500 mv i ol = 20 ma i oh output leakage current 3 0.06 1 m a b < b off , t j = 25 c, v oh = 0 to 24 v i oh output leakage current over temperature range 3 10 m a b < b off , v oh = 0 to 24 v t en(o) enable time of output after setting of v dd 1 6 10 m s v dd = 12 v b > b on + 2 mt or b < b off 2 mt t r output rise time 3 0.08 0.4 m s v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 0.06 0.4 m s v dd = 12 v, r l = 820 ohm, c l = 20 pf r thjsb case sot-89a sot-89b thermal resistance junction to substrate backside 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 34 r thja case to-92ua thermal resistance junction to soldering point 150 200 k/w fig. 34: recommended pad size sot-89x dimensions in mm 5.0 2.0 2.0 1.0
hal11x 8 o micr nas 3.7. magnetic characteristics at t j = 40 c to +140 c, v dd = 4.5 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 114 40 c 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mt unipolar 25 c 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mt 140 c 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mt hal 115 40 c 10.7 1.4 12.5 12.5 1.4 10.7 1.8 2.8 7 mt bipolar 25 c 10.7 1.2 12.5 12.5 1.2 10.7 1.8 2.4 7 mt 140 c 10.7 0.9 12.5 12.5 0.9 10.7 1 1.8 7 mt note: for detailed descriptions of the individual types, see pages 10 and following. the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if higher robustness against mechanical stress is required. 15 10 5 0 5 10 15 15 10 5 0 5 10 15 20 25 30 v ma v dd i dd fig. 35: typical supply current versus supply voltage t a = 40 c t a = 25 c t a = 140 c hal 11x 0 2 4 6 8 10 12 0123456 v ma v dd i dd fig. 36: typical supply current versus supply voltage t a = 40 c t a = 25 c t a = 140 c hal 11x
hal11x o 9 micr nas 0 2 4 6 8 10 12 50 0 50 100 150 c ma t a i dd v dd = 24 v v dd = 4.5 v fig. 37: typical supply current versus temperature hal 11x 0 100 200 300 400 500 0 5 10 15 20 25 30 v mv v dd v ol i o = 12.5 ma fig. 38: typical output low voltage versus supply voltage t a = 40 c t a = 25 c t a = 140 c hal 11x 0 100 200 300 400 500 50 0 50 100 150 mv t a v ol i o = 12.5 ma i o = 20 ma c v dd = 12 v fig. 39: typical output low voltage versus temperature hal 11x 50 0 50 100 150 m a t a i oh c 10 0 10 1 10 2 10 3 10 4 10 1 10 2 v oh = 24 v v dd = 5 v fig. 310: typical output leakage current versus temperature hal 11x
hal114 10 o micr nas 4. type description 4.1. hal 114 the hal 114 is a unipolar switching sensor (see fig. 41). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: switching type: unipolar typical b on : 21.1 mt at room temperature typical b off : 17.1 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 20 khz applications the hal 114 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end-point detection, and rotating speed measurement. b hys output voltage fig. 41: definition of magnetic switching points for the hal 114 0b off b on v ol v o b magnetic characteristics at t j = 40 c to +140 c, v dd = 4.5 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys unit t j min. typ. max. min. typ. max. min. typ. max. 40 c 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mt 25 c 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mt 100 c 6.3 19.9 31.5 3.6 16.4 28.9 2.6 3.5 4 mt 140 c 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if a robustness against mechanical stress is required.
hal114 o 11 micr nas 0 5 10 15 20 25 30 0 5 10 15 20 25 30 mt v dd v b on b off fig. 42: typical magnetic switching points versus supply voltage t a = 40 c t a = 25 c t a = 140 c hal 114 0 5 10 15 20 25 30 3456 mt v dd v b on b off fig. 43: typical magnetic switching points versus supply voltage t a = 40 c t a = 25 c t a = 140 c hal 114 0 5 10 15 20 25 30 50 0 50 100 150 b off mt t a b on b off b on v dd = 12 v c fig. 44: typical magnetic switching points versus temperature hal 114
hal115 12 o micr nas 4.2. hal 115 the hal 115 is a bipolar switching sensor (see fig. 45). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: switching type: bipolar high sensitivity typical b on : 1.2 mt at room temperature typical b off : 1.2 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 20 khz applications the hal 115 is the optimal sensor for all applications with alternating magnetic signals at the sensor position such as: rotating speed measurement, commutation of brushless dc-motors and cooling fans. fig. 45: definition of magnetic switching points for the hal115 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = 40 c to +140 c, v dd = 4.5 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys unit t j min. typ. max. min. typ. max. min. typ. max. 40 c 10.7 1.4 12.5 12.5 1.4 10.7 1.8 2.8 7 mt 25 c 10.7 1.2 12.5 12.5 1.2 10.7 1.8 2.4 7 mt 100 c 10.7 1 12.5 12.5 1 10.7 1.5 2 7 mt 140 c 10.7 0.9 12.5 12.5 0.9 10.7 1 1.8 7 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if higher robustness against mechanical stress is required.
hal115 o 13 micr nas 6 4 2 0 2 4 6 50 0 50 100 150 b off mt t a b on, b off c b on v dd = 12 v hal 115 fig. 46: typical magnetic switching points versus ambient temperature
hal11x 14 o micr nas 5. application notes 5.1. application circuit the hal 11x sensors can operate without external com- ponents. for applications with disturbances on the sup- ply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 51). the series resistor and the capacitor should be placed as closely as possible to the sensor. out gnd 3 2 1v dd 4.7 nf v dd r v 220 w r l fig. 51: recommended application circuit hal115 1 2 3 3.3 k r 1 l 1 r 2 3.3 k l 2 c 1 c 2 2.2 m /50 v 2.2 m /50 v v dd fig. 52: recommended application circuit for dc fans 5.2. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + d t at static conditions, the following equation is valid: d t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax d t 5.3. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 6). please use the sensors of the hal 5xx family if lower op- eration voltage, lower current consumption or tighter magnetic specifications required. 5.4. start-up behavior the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. this parameter t en(o) is specified in the electrical characteristics (see page 7). during the initialization time, the output state is not de- fined and can toggle. after t en(o) , the output will be low if the applied magnetic field b is above b on or high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin .
hal11x o 15 micr nas
hal11x 16 o micr nas 6. data sheet history 1. final data sheet: ahal114 unipolar hall switch ico, june 10, 1998, 6251-456-1ds. first release of the final data sheet. 2. final data sheet: ahal115 hall effect sensor ico, may 7, 1997, 6251-414-1ds. first release of the final data sheet. 3. final data sheet: ahal114, hal 115 hall effect sen- sor family, dec. 20, 1999, 6251-456-2ds. second re- lease of the final data sheet. major changes: additional package sot-89b temperature range aao replaced by ako for hal114 additional temperature range ako for hal115 outline dimensions for sot-89a and to-92ua changed supply voltage range changed for hal115 micronas intermetall gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (12/99) order no. 6251-456-2ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas intermetall gmbh does not assume responsibility for patent infringements or other rights of third parties which may result from its use. further, micronas intermetall gmbh reserves the right to re- vise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas intermetall gmbh.
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