bas33, bas34 document number 85541 rev. 1.7, 17-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diodes features ? silicon planar diodes ? very low reverse current ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? protection circuits, time delay circuits, peak follower circuits, lo garithmic amplifiers mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part type differentiation ordering code type marking remarks bas33 v rrm = 40 v bas33-tap or bas33-tr bas33 ammopack/tape and reel bas34 v rrm = 70 v bAS34-TAP or bas34-tr bas34 ammopack/tape and reel parameter test condition part symbol value unit reverse voltage bas33 v r 30 v bas34 v r 60 v peak forward surge current t p = 1 s i fsm 2a forward continuous current i f 200 ma parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85541 rev. 1.7, 17-aug-10 bas33, bas34 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified package dimensions in millimeters (inches): do-35 parameter test condition part symbol min. ty p. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current e 300 lx, v r i r 13na e 300 lx, v r , t j = 125 c i r 0.5 a e 300 lx, v r = 15v bas33 i r 0.5 1 na e 300 lx, v r = 30 v bas34 i r 0.5 1 na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms bas33 v (br) 40 v bas34 v (br) 70 v diode capacitance v r = 0, f = 1 mhz c d 3pf figure 1. reverse current vs. junction temperature 04 0 8 0 120 160 1 10 100 1000 10000 i- re v erse c u rrent (na) r t j - j u nction temperat u re (c) 200 94 9079 scattering limit v r = v rrm figure 2. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i- for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 907 8 scattering limit t j =2 5 c 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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