bfp 181w for low noise, high-gain broadband amplifier at collector currents from 0.5 ma to 12 ma f t = 8 ghz f = 1.45 db at 900 mhz vps05605 4 2 1 3 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfp 181w rfs 1 = e 2 = c 3 = e 4 = b sot-343 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 20 ma base current i b 2 total power dissipation , t s 91 c 1) p tot 175 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance junction - soldering point r thjs 340 k/w product specification 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com npn t rf transistor y
electrical characteristics at t a = 25c, unless otherwise specified. parameter values unit symbol min. max. typ. dc characteristics v v (br)ceo collector-emitter breakdown voltage i c = 1 ma, i b = 0 12 - - a collector-emitter cutoff current v ce = 20 v, v be = 0 - 100 - i ces collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain i c = 5 ma, v ce = 8 v h fe 50 100 200 - bfp 181w product specification 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values max. min. typ. ac characteristics (verified by random sampling) transition frequency i c = 10 ma, v ce = 8 v, f = 500 mhz f t 6 8 ghz - c cb pf - collector-base capacitance v cb = 10 v, f = 1 mhz 0.24 0.4 collector-emitter capacitance v ce = 10 v, f = 1 mhz 0.27 - - c ce emitter-base capacitance v eb = 0.5 v, f = 1 mhz 0.32 - c eb - 1.45 1.8 f - - noise figure i c = 2 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz db - - - - g ms power gain, maximum stable f) i c = 5 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz 20 16.5 - - 16.5 11.5 - - | s 21e | 2 transducer gain i c = 5 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz i c = 5 ma, v ce = 8 v - - bfp 181w product specification 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) : transistor chip data bf = 96.461 - ikf = 0.12146 a br = - 16.504 ikr = 0.24951 a rb = 9.9037 re = 2.1372 vje = 0.73155 v xtf = 0.33814 - ptf = 0 deg mjc = 0.30013 - cjs = 0ff xtb = 0- fc = 0.99768 - is = 0.0010519 fa vaf = 22.403 v ne = 1.7631 - var = v 5.1127 nc = 1.6528 - rbm = 6.6315 cje = 1.8168 ff tf = ps 17.028 itf = 1.0549 ma vjc = 1.1633 v tr = ns 2.7449 mjs = 0- xti = 3 - nf = 0.90617 - ise = 12.603 fa nr = 0.87757 - isc = 0.01195 fa irb = 0.69278 ma rc = 2.2171 mje = 0.43619 - vtf = 0.12571 v cjc = 319.69 ff xcjc = 0.082903 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scalling is necessary. package equivalent circuit: l bi = 0.43 nh l bo = 0.47 nh l ei = 0.26 nh l eo = 0.12 nh l ci = 0.06 nh l co = 0.36 nh c be = 68 ff c cb = 46 ff c ce = 232 ff valid up to 6ghz bfp 181w product specification 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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