symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 37 50 c/w n-ch 74 90 c/w r jl n-ch 28 40 c/w p-ch 35 50 c/w p-ch 73 90 c/w r jl p-ch 32 40 c/w thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a 40 -40 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 6.3 5 20 2.5 1.6 -4.4 -5.5 2.5 1.6 a continuous drain current a t a =25c i d t a =70c pulsed drain current b r ja maximum junction-to-ambient a steady-state -20 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s AOP608 features n-channel p-channel v ds (v) = 40v -40v i d = 6.3a (v gs =10v) -5.5a (v gs = -10v) r ds(on) r ds(on) < 33m ? (v gs =10v) < 45m ? (v gs = -10v) < 46m ? (v gs =4.5v) < 63m ? (v gs = -4.5v) general description the AOP608 uses advanced trench technology mosfets to provide excellen and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. standard product AOP608 is pb-free (meets rohs & sony 259 specifications). AOP608l is a green product ordering option. AOP608 and a op608l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 pdip-8 g2 d2 s2 g1 d1 s1 n-channel p-channel complementary enhancement mode field effect transistor r ds(on) www.freescale.net.cn 1 / 7
AOP608 symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 20 a 24.1 33 t j =125c 40 33.7 46 m ? g fs 22 s v sd 0.77 1 v i s 6.3 a c iss 404 pf c oss 95 pf c rss 37 pf r g 2.7 ? q g (10v) 9.2 nc q g (4.5v) 4.6 nc q gs 1.6 nc q gd 2.5 nc t d(on) 4.3 ns t r 3.4 ns t d(off) 15 ns t f 2.8 ns t rr 21.2 ns q rr 15.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance i s =1a,v gs =0v v gs =10v, i d =6.3a diode forward voltage v gs =10v, v ds =20v, r l =3 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =20v, i d =6.3a r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =5a v ds =5v, i d =6.3a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs = 20v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =32v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =6.3a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =6.3a, di/dt=100a/ s input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1: aug 2005 www.freescale.net.cn 2 / 7
AOP608 typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 5v 4.5v 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6.3a v gs =4.5v i d =5a 10 20 30 40 50 60 70 80 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6.3a 25c 125c www.freescale.net.cn 3 / 7
AOP608 typical electrical and thermal characteristics: n-channel 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10203040 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 6.3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 7
AOP608 symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.9 -3 v i d(on) -20 a 34.7 45 t j =125c 56 70 50.6 63 m ? g fs 12 s v sd -0.75 -1 v i s -5.5 a c iss 657 pf c oss 143 pf c rss 63 pf r g 6.5 ? q g (10v) 14.2 nc q g (4.5v) 7.1 nc q gs 2.2 nc q gd 4.1 nc t d(on) 7.7 ns t r 8ns t d(off) 26.5 ns t f 11.5 ns t rr 21.9 ns q rr 14.9 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-32v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-4.6a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-5.5a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-5.5a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-20v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-20v, i d =-5.5a turn-on delaytime v gs =-10v, v ds =-20v, r l =3.6 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-5.5a, di/dt=100a/ s body diode reverse recovery charge i f =-5.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1: aug 2005 www.freescale.net.cn 5 / 7
AOP608 typical electrical and thermal characteristics: p-channe l 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -3.5v -4. 5 v -10v -4v -5v -6v 0 5 10 15 20 25 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 50 55 60 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-5.5a v gs =-4.5v i d =-4.6a 20 40 60 80 100 120 140 160 2345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5.5a 25c 125c www.freescale.net.cn 6 / 7
AOP608 typical electrical and thermal characteristics: p-channe l 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0.1s 1s 1 0s d c t j(max) =150c t a =25c r ds(on) limited 10 s 0 2 4 6 8 10 0 5 10 15 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 0 10203040 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss v ds =-30v i d =-5.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 7 / 7
|
