evaluation kit available _______________________________________________________________ maxim integrated products 1 for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxims website at www.maxim-ic.com. tiny low-noise amplifiers for hspa/lte max2666/max2668 general description the max2666/max2668 are a family of low-noise ampli - fiers (lnas) intended for use in hspa mobile handsets. the lnas provide three programmable gain states, delivering superior optimization for linearity and sensitiv - ity versus traditional two-gain-state lnas. the max2666 is optimized for use over the 2100mhz to 2200mhz frequency range (bands 1, 4, and 10) and offers a typical maximum gain of 14.5db. the max2668 is optimized for use over the 850mhz to 1000mhz frequency range (bands 5, 6, and 8) and pro - vides a typical maximum gain of 17db. each device is available in a tiny 1mm x 1.5mm, 6-pin ultra-thin lga package. applications hspa/lte front-end modules hspa/lte preamplification features s small footprint: 1mm x 1.5mm package s thin profile: 0.55mm s low noise figure 1db for max2668 1.1db for max2666 s three gain states for optimum blocker handling s 3.8ma low supply current s low bill of materials 19-5479; rev 0; 8/10 + denotes a lead(pb)-free/rohs-compliant package. ordering information typical operating circuit part temp range pin-package max2666 eyt+ -40 n c to +85 n c 6 ultra-thin lga max2668 eyt+ -40 n c to +85 n c 6 ultra-thin lga 1 2 3 6 5 4 v cc gain1 gain0 lna_out gain control table for two gain steps gain1 gain0 gain 0 ? low 1 ? high gain control table for three gain steps gain1 gain0 gain 0 off 0 low 1 mid 1 high 0 1 0 1 max2666 max2668 lna_in choke + matching
tiny low-noise amplifiers for hspa/lte max2666/max2668 2 ______________________________________________________________________________________ stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v cc to gnd .......................................................... -0.3v to + 3.6 v other p ins to gnd ................................... -0.3v to (v cc + 0.3v) maximum input power ................................................... +1 0 dbm continuous power dissipation ( t a = +70 n c) ultra-thin lga (derate 2.1mw/ n c above +70 n c) ....... 167m w operating temperature range .......................... -40 n c to +85 n c junction temperature ..................................................... +150 n c storage temperature range ............................ -65 n c to +1 6 0 n c lead temperature (soldering, 10s) ................................ + 26 0 n c soldering temperature (reflow) ...................................... +260 n c dc electrical characteristics ( typical operating circuit , max2666/max2668 evaluation kit, gain1 = high, gain0 = high-z, v cc = 2.7v to 3.3v, no rf signal applied, t a = -40 n c to +85 n c. typical values are at v cc = 2.85v, t a = +25 n c, unless otherwise noted.) (note 1) ac electrical characteristics (max2666/max2668 evaluation kit, input matching network according to table 1 (input matching network), gain1 = high, gain0 = high-z, v cc = 2.85v, t a = +25 n c, unless otherwise noted.) absolute maximum ratings caution! esd sensitive device parameter conditions min typ max units supply voltage 2.7 2.85 3.3 v supply current, high gain gain_ = 11 3.8 ma supply current, mid gain gain_ = 10 3.8 ma supply current, low gain gain_ = 01 100 f a shutdown current gain_ = 00 100 f a logic-high (v ih ) 1.2 v logic-low (v il ) 0.5 v parameter conditions min typ max units max2666 frequency range bands 1, 4, 10 2110 2140 2170 mhz gain hg mode 10 14.5 17.5 db mg mode, gain_ = 10 0 5 8.5 lg mode, gain_ = 01 -15.5 -12 -9 noise figure hg mode 1.1 db mg mode, gain_ = 10 3 lg mode, gain_ = 01 12 input 3rd-order intercept (note 2) hg mode -2 dbm mg mode, gain_ = 10 4 lg mode, gain_ = 01 > 20 phase shift with gain step 15 degrees
tiny low-noise amplifiers for hspa/lte max2666/max2668 _______________________________________________________________________________________ 3 ac electrical characteristics (continued) (max2666/max2668 evaluation kit, input matching network according to table 1 (input matching network), gain1 = high, gain0 = high-z, v cc = 2.85v, t a = +25 n c, unless otherwise noted.) note 1: guaranteed by test at t a = +25 n c; guaranteed by designed and characterization at t a = -40 n c and t a = +85 n c. note 2: -25dbm/tone at high gain, -15dbm/tone at mid gain, -15dbm/tone at low gain. tone separation less than 5mhz. parameter conditions min typ max units max2668 (band 8) frequency range band 8 925 942 960 mhz gain hg mode 13.5 17 21 db mg mode, gain_ = 10 0 5 8 lg mode, gain_ = 01 -19 -16 -13 noise figure hg mode 1 db mg mode, gain_ = 10 5 lg mode, gain_ = 01 16 input 3rd-order intercept (note 2) hg mode -4 dbm mg mode, gain_ = 10 2 lg mode, gain_ = 01 > 18 phase shift with gain step 15 degrees max2668 (band 5, band 6) frequency range bands 5 and 6 869 881.52 894 mhz gain hg mode 13.5 17 21 db mg mode, gain_ = 10 0 5 8 lg mode, gain_ = 01 -19 -16 -13 noise figure hg mode 1 db mg mode, gain_ = 10 5 lg mode, gain_ = 01 16 input 3rd-order intercept (note 2) hg mode -5 dbm mg mode, gain_ = 10 2 lg mode, gain_ = 01 > 18 phase shift with gain step 15 degrees
tiny low-noise amplifiers for hspa/lte max2666/max2668 4 ______________________________________________________________________________________ typical operating characteristics (max2666/max2668 evaluation kit. typical values are at v cc = 2.85v, t a = +25 c, unless otherwise noted.) max2666 gain vs. frequency and temperature high-gain mode max2666 toc01 rf frequency (mhz) gain (db) 2160 2150 2140 2130 2120 14 15 16 13 2110 2170 t a = +25c t a = +85c t a = -40c max2666 gain vs. frequency and temperature mid-gain mode max2666 toc02 gain (db) 4.5 5.0 5.5 6.0 4.0 rf frequency (mhz) 2160 2150 2140 2130 2120 2110 2170 t a = +25c t a = +85c t a = -40c max2666 gain vs. frequency and temperature low-gain mode max2666 toc03 -13.5 -13.0 -12.5 -12.0 -11.5 -11.0 -14.0 gain (db) rf frequency (mhz) 2160 2150 2140 2130 2120 2110 2170 t a = +25c t a = +85c t a = -40c max2666 noise figure vs. frequency and temperature high-gain mode max2666 toc04 nf (db) 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 0.70 rf frequency (mhz) 2160 2150 2140 2130 2120 2110 2170 t a = +25c t a = -40c t a = +85c max2666 s22 high-gain mode max2666 toc07 frequency (mhz) s22 (db) 3000 2500 2000 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 1500 3500 max2666 s11 high-gain mode max2666 toc06 frequency (mhz) s11 (db) 3000 2500 2000 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 1500 3500 max2666 s12 high-gain mode max2666 toc09 frequency (mhz) s12 (db) 3000 2500 2000 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -40 1500 3500 max2666 iip3 vs. supply voltage and temperature mid band 10; 5mhz tone's separation max2666 toc05 supply voltage (v) iip3 (dbm) 3.2 3.1 3.0 2.9 2.8 0 2 4 6 8 10 12 14 16 18 20 22 24 -2 2.7 3.3 low gain; t a = +85c high gain; t a = +85c mid gain; t a = -40c low gain; t a = -40c high gain; t a = -40c mid gain; t a = +85c max2666 s21 high-gain mode max2666 toc08 frequency (mhz) s21 (db) 3000 2500 2000 -5 0 5 10 15 20 -10 1500 3500
tiny low-noise amplifiers for hspa/lte max2666/max2668 _______________________________________________________________________________________ 5 typical operating characteristics (continued) (max2666/max2668 evaluation kit. typical values are at v cc = 2.85v, t a = +25 c, unless otherwise noted.) max2668 gain vs. frequency and temperature high-gain mode max2668 toc10 16 17 18 19 20 15 t a = +85c t a = -40c t a = +25c gain (db) 860 870 880 890 900 910 920 930 940 950 960 rf frequency (mhz) max2668 gain vs. frequency and temperature mid-gain mode max2668 toc11 5 6 7 4 t a = +85c t a = -40c t a = +25c gain (db) 860 870 880 890 900 910 920 930 940 950 960 rf frequency (mhz) max2668 gain vs. frequency and temperature low-gain mode max2668 toc12 -17 -16 -15 -14 -18 t a = +85c t a = -40c t a = +25c gain (db) 860 870 880 890 900 910 920 930 940 950 960 rf frequency (mhz) max2668 noise figure vs. frequency and temperature high-gain mode max2668 toc13 rf frequency (mhz) nf (db) 950 940 870 880 890 910 920 900 930 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.6 860 960 t a = +25c t a = -40c t a = +85c max2668 iip3 vs. supply voltage and temperature mid band 8; 5mhz tone's separation max2668 toc14 iip3 (dbm) -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 -6 supply voltage (v) 3.2 3.1 3.0 2.9 2.8 2.7 3.3 low gain; t a = -40c low gain; t a = +85c mid gain; t a = -40c mid gain; t a = +85c high gain; t a = +85c high gain; t a = -40c max2668 s11 high-gain mode max2668 toc15 frequency (mhz) s11 (db) 2000 1500 1000 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -20 500 2500 max2668 s22 high-gain mode max2668 toc16 s22 (db) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -22 frequency (mhz) 2000 1500 1000 500 2500 max2668 s21 high-gain mode max2668 toc17 s21 (db) -15 -10 -5 0 5 10 15 20 -20 frequency (mhz) 2000 1500 1000 500 2500 max2668 s12 high-gain mode max2668 toc18 s12 (db) -45 -40 -35 -30 -25 -20 -50 frequency (mhz) 2000 1500 1000 500 2500
tiny low-noise amplifiers for hspa/lte max2666/max2668 6 ______________________________________________________________________________________ pin description pin configuration 1 2 3 6 5 4 v cc lna_out/ gain0 gain1 lna_in lna_gnd bias_gnd ultra-thin lga max2666 max2668 top view pin name function 1 lna_in rf input. match according to band in table 1. 2 bias_gnd dc and bias ground 3 lna_gnd rf ground 4 lna_out/gain0 rf output and gain control. internally match to 50 i . couple gain logic with a 20k i resistor. when dc is open-circuit, pin self-biases to logic-high. 5 gain1 gain control. together with gain0, selects gain mode. must be connected to logic-high or logic-low. 6 v cc supply voltage. bypass with a 1000pf capacitor to ground.
tiny low-noise amplifiers for hspa/lte max2666/max2668 _______________________________________________________________________________________ 7 detailed description the max266 6 /max266 8 are low-power lnas designed for 3g mobile applications. the devices feature low noise , high linearity, and three gain steps in a tiny plastic package. input and output matching the devices require one matching inductor at the input port in series with a dc-blocking capacitor to achieve optimal performance in nf, gain, iip3, and phase shift. table 1 presents the recommended input-matching network values. the output port is internally matched to 50 i , eliminating the need for external matching com - ponents. at the output port, an external dc-blocking capacitor should be used to isolate the control function of the output pin. dc decoupling and layout a properly designed pcb is essential to any rf micro - wave circuit. use controlled-impedance lines on all high-frequency inputs and outputs. bypass v cc with a decoupling capacitor located close to the device. for long v cc lines, it might be necessary to add decou - pling capacitors. locate these additional capacitors further away from the device package. proper grounding of the gnd pins is essential. if the pcb uses a top-side rf ground, connect it directly to the gnd pins. for a board where the ground is not on the component layer, connect the gnd pins to the board with multiple vias close to the package. gain control the devices lna_out/gain0 pin is also used as a control pin for the lna gain modes according to the gain control table. gain0 logic level is set through an external 20k i resistor. an external dc-blocking capacitor should be used to isolate the control function of this dual-pur - pose pin (see the typical operating circuit ). the gain1 pin must be set to either logic-high or logic-low. refer to www.maxim-ic.com for the max2666/max2668 evaluation kit schematic, gerber data, pads layout file, and bom information. table 1. matching component values in different bands detailed application circuit in ev kit max2666 max2668 lna_in l4 3.9nh q 0.1nh (max2666) 12nh q 0.2nh (max2668) (0402) c7 open (0201) c1 0.01f 10% (0402) gnd c5 1000pf 10% (0402) r1 0 i (0201) r2 0 i (0201) r4 20k i (0201) gain1 gain0 c3 0.01f 10% (0201) c4 0.01f 10% (0201) rfin rfout 1 bias_gnd lna_gnd v cc v cc gain1 lna_out/gain0 u1 2 3 6 5 4 band series c (nf) series l (nh) 1, 4, 10 10 3.9 5, 6 10 12 8 10 12
tiny low-noise amplifiers for hspa/lte max2666/max2668 8 ______________________________________________________________________________________ package information for the latest package outline information and land patterns, go to www.maxim-ic.com/packages . note that a +, #, or - in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status. package type package code outline no. land pattern no. 6 ultra-thin lga y61a1+2 21-0190 90-0233 chip information process: sige bicmos
tiny low-noise amplifiers for hspa/lte max2666/max2668 maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 9 ? 2010 maxim integrated products maxim is a registered trademark of maxim integrated products, inc. revision history revision number revision date description pages changed 0 8/10 initial release
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