SSM5G11TU 2008-09-27 1 silicon p channel mos type (u-mos )/silicon epitaxial schottky barrier diode SSM5G11TU dc-dc converter applications ? 4-v drive ? combined a p-ch mosfet and a schottky barrier diode in one package. ? low r ds (on) and low v f absolute maximum ratings mosfet (ta = 25c) characteristic symbol rating unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v dc i d -1.4 drain current pulse i dp -2.8 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c schottky barrier diode (ta = 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 30 v average forward current i f (av) 0.7 a peak one cycle surge forward current i fsm 2 (50hz) a junction temperature t j 125 c mosfet and diode (ta = 25c) characteristics symbol rating unit storage temperature range t stg ? 55 to125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm ufv jedec D jeita D toshiba 2-2r1a weight: 7 mg (typ.) 5 1 3 kev 2 4 5 13 2 4
SSM5G11TU 2008-09-27 2 mosfet electrical character istics (ta = 25c) characteristics symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -30 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = +20 v -15 ? ? v drain cutoff current i dss v ds = -30 v, v gs = 0 v ? ? -10 a gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -5 v, i d = -1 ma -0.8 ? -2.0 v forward transfer admittance ? y fs ? v ds = -5 v, i d = -1.0 a (note 2) 1.0 2.0 ? s i d = -1.0 a, v gs = -10 v (note 2) ? 175 226 drain-source on-resistance r ds (on) i d = -0.5 a, v gs = -4 v (note 2) ? 290 403 m input capacitance c iss ? 120 ? output capacitance c oss ? 32 ? reverse transfer capacitance c rss v ds = -15 v, v gs = 0, f = 1 mhz ? 21 ? pf total gate charge q g ? 2.9 ? gate-source charge q gs ? 2.2 ? gate-drain charge q gd v ds = -15 v, i d = -1.4 a v gs = -10 v ? 0.7 ? nc turn-on time t on ? 12 ? switching time turn-off time t off v dd = -15 v, i d = -1 a, v gs = 0 to -4 v, r g = 10 ? 8.5 ? ns drain-source forward voltage v dsf i d = 1.4 a, v gs = 0 v (note 2) ? 0.87 1.2 v note 2: pulse test switching time test circuit (a) test circuit (b) v in usage considerations v th can be expressed as voltage between gate and source when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) be sure to take this into consideration when using the device. (c) v out v dd =? 15 v r g = 10 d.u. 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 4 v 10 s v dd out r g r l t on 90% 10% ?4 v 0 v 90% 10% t off t r t f v ds ( on ) v dd
SSM5G11TU 2008-09-27 3 schottky barrier diode electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit peak forward voltage v fm (1) i f = 0.5 a ? 0.34 0.41 v peak forward voltage v fm (2) i f = 0.7 a ? 0.37 0.44 v repetitive peak reverse current i rrm v r = 15 v ? 60 200 a junction capacitance c t v r = 0 v, f = 1 mhz ? 139 ? pf precaution the schottky barrier diode in this device has large reverse cu rrent leakage compared to typical switching diodes. thus, excessive operating temperature or voltage may cause thermal runaway. to avoid this problem, be sure to take both forward and reverse loss into consideration. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account.
SSM5G11TU 2008-09-27 4 mosfet ambient temperature ta (c) ambient temperature ta (c) r ds (on) ? i d drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 -3 0 -0.2 -0.4 -0.6 -2 v gs =- 2.5v -10 v -1 -5.0 v -3.0 v -2.8 v gate-source voltage v gs (v) i d ? v gs drain current i d (a) -10 0 -0.1 -1 -0.001 -0.01 -0.0001 -3.0 ? 25 c ta = 100 c 25 c -1.0 v th ? ta gate threshold voltage v th (v) -2.0 0 ? 50 0 150 50 100 r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 100 1000 drain-source on-resistance r ds (on) (m ? ) 0 gate-source voltage v gs (v) -10 0 r ds (on) ? v gs 1000 800 -20 ? 25 c ta = 100 c 25 c i d =? 1.0a common source common source v ds = -5 v drain current i d (a) drain-source on-resistance r ds (on) (m ? ) 0 -1 -2 -3 0 1000 common source ta = 25c -1.0 common source v ds = -5.0 v i d = -1 ma common source -0.8 -1.0 -4.0 v i d = -0.5 a / v gs = -4.0 v -4.0 v v gs = -10 v -1.0 a / -10 v common source ta = 25 c -2.0 600 400 200 800 600 400 200 800 600 400 200 -3.5 v -3.3 v -4.0
SSM5G11TU 2008-09-27 5 mosfet common source v gs = 0 v g d s i dr drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 -0.1 -1 3 0.3 -0.01 drain-source voltage v ds (v) c ? v ds capacitance c (pf) 1 -0.1 -1 -10 -100 10 100 30 50 3 5 common source ta = 25c f = 1 mhz v gs = 0 v drain current i d (a) switching time t (ns) t ? i d 1 -0.01 100 -0.1 1000 -1 -10 10 t f t on t r common source v dd = -15 v v gs = 0 to -4.0 v ta = 25 c r g = 10 drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.5 1.0 ? 25 c ta =100 c 25 c 1.5 t off 10 c iss c oss c rss 500 300 1000 common source v ds = -5.0 v ta = 25c total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 -4 -8 5 -10 -6 -2 1 v dd = -15 v v dd = -24 v 2 3 4 common source i d = -1.4 a ta = 25c
SSM5G11TU 2008-09-27 6 schottky barrier diode instantaneous forward current i f (ma) instantaneous forward voltage v f (v) i f ? v f ta m a x ? i f (av) maximum allowable temperature ta max (c) average forward current i f (av) (a) p f(av) ? i f(av) average forward power dissipation p f (av) (w) average forward current i f (av) (a) capacitance c t (pf) reverse voltage v r (v) c t ? v r (typical) 1000 0 10 100 0.1 1 0.4 25 c 0.5 0.1 0.3 0.2 0.4 0 0.1 1.0 0.8 0.3 1.2 0.5 0.6 0.4 0.2 0 dc = 30 = 30 60 90 120 180 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 140 dc 1 1 10 100 10 100 f = 1 mhz ta = 25c 360 0 rectangular waveform conduction angle
SSM5G11TU 2008-09-27 7 shottky barrier diode reverse current i r ( a) reverse voltage v r (v) i r ? v r junction temperature t j (c) i r ? t j (typical) reverse current i r (ma) average reverse power dissipation p r (av) (w) reverse voltage v r (v) p r (av) ? v r (typical) 1000 0 100 1 10 25 25 c 10 15 30 5 20 0.01 0 50 100 150 0.1 10 1000 100 v r = 3 v 5 10 20 30 15 pulse test 1 0 0 10 15 20 2 4 6 8 = 60 120 180 240 300 dc 5 360 0 rectangular waveform conduction angle t j = 125c v r
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and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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