AO4406A 30v n-channel mosfet general description p roduct summary v ds i d (at v gs =10v) 1 3a r ds(on) (at v gs =10v) < 11.5m w r ds(on) (at v gs = 4.5v) < 15.5m w 100% uis tested 100% r g tested symbol v ds the AO4406A uses advanced trench technology to provide excellent r ds(on) with low gate charge. t his device is suitable for high side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g d s soic-8 t op view bottom view d d d d s s s g v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q j l maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 t a =25c t a =70c p ower dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =25c v maximum junction-to-ambient a v 20 gate-source voltage drain-source voltage 30 mj avalanche current c 24 a 2 2 a i d 13 1 0.4 100 c/w r q j a 31 5 9 40 thermal characteristics w 3.1 units parameter typ max 2 t a =70c j unction and storage temperature range -55 to 150 c rev 2: nov. 2011 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4406A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.9 2.5 v i d(on) 100 a 9.5 11.5 t j =125c 14 17 12.5 15.5 m w g fs 45 s v sd 0.75 1 v i s 4 a c iss 610 760 910 pf c oss 88 125 160 pf c rss 40 70 100 pf r g 0.8 1.6 2.4 w q g (10v) 11 14 17 nc q g (4.5v) 5 6.6 8 nc q gs 1.9 2.4 2.9 nc q gd 1.8 3 4.2 nc t d(on) 4.4 ns t 9 ns v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =12a r ds(on) static drain-source on-resistance i dss gate resistance v gs =0v, v ds =0v, f=1mhz m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w on state drain current reverse transfer capacitance i s =1a,v gs =0v v ds =5v, i d =12a v gs =4.5v, i d =10a forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =1.25 w , total gate charge v gs =10v, v ds =15v, i d =12a gate source charge gate drain charge total gate charge t r 9 ns t d(off) 17 ns t f 6 ns t rr 5.6 7 8 ns q rr 6.4 8 9.6 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =12a, di/dt=500a/ m s body diode reverse recovery time body diode reverse recovery charge i f =12a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.25 w , r gen =3 w turn-off fall time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 2: nov. 2011 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4406A typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 1 0 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 6 8 1 0 12 14 16 18 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =4.5v i d =10a v g s =10v i d =12a 25 c 125 c v ds =5v v g s =4.5v v g s =10v 0 2 0 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4v 6 v 7v 10v 4.5v 5v 3.5v 40 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 1 0 15 20 25 30 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = 12a 25 c 125 c rev 2: nov. 2011 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4406A typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =15v i d =12a 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased 10 m s 10s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 10ms 1 1 0 100 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c) t a = 25 c t a = 150 c t a = 100 c t a = 125 c 100ms 1 1 0 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) t a = 25 c figure 10: maximum forward biased safe operating area (note f) rev 2: nov. 2011 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4406A typical electrical and thermal characteristics 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w rev 2: nov. 2011 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4406A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & wa veforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 2: nov. 2011 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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