dcr590g65 phase control thyristor ds5870-1.4 june 2008 (ln26249) 1/10 www.dynexsemi.com features double side cooling high surge capability applications high power drives high voltage power supplies static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr590g65* DCR590G60 dcr590g55 6500 6000 5500 t vj = -40 c to 125 c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *6200v @ -40 0 c, 6500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr590g65 note: please use the complete part number when orde ring and quote this number in any future correspondence relating to your order. key parameters v drm 6500v i t(av) 595a i tsm 6600a dv/dt* 1500v/s di/dt 200a/us * higher dv/dt selections available outline type code: g (see package details for further information) fig. 1 package outline
semiconductor dcr590g65 2/10 www.dynexsemi.com current ratings t case = 60 c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on-state current half wave resistive load 595 a i t(rms) rms value - 935 a i t continuous (direct) on-state current - 912 a surge ratings symbol parameter test conditions max. units i tsm surge (non-repetitive) on-state current 10ms half si ne, t case = 125 c 6.6 ka i 2 t i 2 t for fusing v r = 0 0.22 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j-c) thermal resistance ? junction to case double side co oled dc - 0.0268 c/w single side cooled anode dc - 0.0527 c/w cathode dc - 0.0652 c/w r th(c-h) thermal resistance ? case to heatsink clamping force 11.5kn double side - 0.0072 c/w (with mounting compound) single side - 0.0144 c/w t vj virtual junction temperature on-state (conducting) - 1 35 c reverse (blocking) - 125 c t stg storage temperature range -55 125 c f m clamping force 10 13 kn
semiconductor dcr590g65 3/10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 c - 100 ma dv/dt max. linear rate of rise of off-state voltage t o 67% v drm , t j = 125 c, gate open - 1500 v/s di/dt rate of rise of on-state current from 67% v drm to 2x i t(av) repetitive 50hz - 100 a/s gate source 30v, 10 , non-repetitive - 200 a/s t r < 0.5s, t j = 125 c v t(to) threshold voltage ? low level 50a to 400a at t case = 125 c - 0.912 v threshold voltage ? high level 400a to 1600a at t case = 125 c - 1.108 v r t on-state slope resistance ? low level 50a to 400a at t case = 125 c - 2.157 m on-state slope resistance ? high level 400a to 1600a at t case = 125 c - 1.647 m t gd delay time v d = 67% v drm , gate source 30v, 10 - 3 s t r = 0.5s, t j = 25 c t q turn-off time i t = 500a , t j = 125 c, v r = 100v, di/dt = 5a/s, 550 1100 s dv dr /dt = 20v/s linear q s stored charge i t = 500a, t j = 125 c, di/dt = 5a/s, 1800 2600 c i rr reverse recovery current i t = 500a, t j = 125 c, di/dt = 5a/s, 77 90 a i l latching current t j = 25 c, v d = 5v - 3 a i h holding current t j = 25 c, r g-k = , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr590g65 4/10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25 c 1.5 v v gd gate non-trigger voltage at 50% v drm, t case = 125 c 0.4 v i gt gate trigger current v drm = 5v, t case = 25 c 250 ma i gd gate non-trigger current at 50% v drm, t case = 125 c 15 ma curves 0 400 800 1200 1600 1.0 2.0 3.0 4.0 instantaneous on-state voltage, v t - (v) instantaneous on-state current, i t - (a) 25c min 25c max 125c min 125c max fig.2 maximum & minimum on-state characteristics v tm equation where a = 0.542452 b = 0.065613 v tm = a + bln (i t ) + c.i t +d. i t c = 0.001318 d = 0.015356 these values are valid for t j = 125 c for i t 50a to 1600a
semiconductor dcr590g65 5/10 www.dynexsemi.com 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 900 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 fig.3 on-state power dissipation ? sine wave fig.4 m aximum permissible case temperature, double side cooled ? sine wave 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 500 1000 1500 2000 2500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30 fig.5 maximum permissible heatsink temperature, double side cooled ? sine wave fig.6 on-state power dissipation ? rectangular wav e
semiconductor dcr590g65 6/10 www.dynexsemi.com 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 fig.7 maximum permissible case temperature, double side cooled ? rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled ? rectangular wave 0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10 100 time ( s ) themal impedance z th(j-c) ( c/kw ) double side cooled anode cooled cathode cooled 1 2 3 4 double side cooled r i (c/kw) 2.2995 5.4226 16.9074 2.1488 t i (s) 0.0066401 0.0457025 0.4962482 1.8248 anode side cooled r i (c/kw) 2.3214 5.2661 10.2686 34.8031 t i (s) 0.0066948 0.045528 0.3484209 4.582 cathode side cooled r i (c/kw) 2.4895 5.9105 7.4256 49.3432 t i (s) 0.0070404 0.052895 0.3933903 4.2295 z th = [r i x ( 1-exp. (t/t i ))] [1] r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling z th (z) z th (z) z th (z) sine. rect. sine. rect. sine. rect. 180 4.15 2.72 180 4.15 2.72 180 4.13 2.71 120 4.90 4.02 120 4.89 4.02 120 4.87 4.00 90 5.74 4.79 90 5.73 4.78 90 5.69 4.76 60 6.53 5.65 60 6.52 5.65 60 6.46 5.60 30 7.16 6.64 30 7.15 6.62 30 7.07 6.56 15 7.46 7.18 15 7.44 7.16 15 7.36 7.09 fig.9 maximum (limit) transient thermal impedance ? junction to case ( c/kw)
semiconductor dcr590g65 7/10 www.dynexsemi.com 0 1 2 3 4 5 6 7 1 10 100 number of cycles surge current, i tsm - (ka) conditions: tcase = 125c v r =0 pulse width = 10ms 0 2 4 6 8 10 12 14 16 18 20 1 10 100 pulse width, t p - (ms) surge current, i tsm - (ka) 0 0.1 0.2 0.3 0.4 0.5 i 2 t (ma 2 s) i 2 t i tsm c onditions: t case = 125c v r = 0 half-sine wave fig.10 multi-cycle surge current fig.11 single-cycle surge current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 rate of decay of on-state currrent, di/dt - (a/us) stored charge, q s - (uc) q smin = 954.26*(di/dt) 0.3943 q smax = 1596.04*(di/dt) 0.3032 0 50 100 150 200 250 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) reverse recovery current, i rr - (a) i rrmax = 30.906*(di/dt) 0.6633 i rrmin = 25.12*(di/dt) 0.6961 fig.12 stored charge vs di/dt fig.13 reverse recover y current vs di/dt
semiconductor dcr590g65 8/10 www.dynexsemi.com 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger current i gt , - (a) gate trigger voltage, v gt - (v) tj = 125 o c tj = 25 o c tj = -40 o c preferred gate drive area upper limit lower limit fig14 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c fig. 15 gate characteristics 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor dcr590g65 9/10 www.dynexsemi.com package details for further package information, please contact cus tomer services. all dimensions in mm, unless state d otherwise. do not scale. ? 1 . 5 ?57.0 max ?33.95 nom ?33.95 nom hole ?3.60 x 2.00 deep (in both electrodes) 3rd angle projection do not scale if in doubt ask cathode gate anode for package height see table 20 offset (nom.) to gate tube device maximum thickness (mm) minimum thickness (mm) dcr803sg18 26.415 25.865 dcr806sg28 26.49 25.94 dcr818sg48 26.84 26.17 dcr820sg65 27.1 26.55 dcr1080g22 26.415 25.865 dcr960g28 26.49 25.94 dcr780g42 26.72 26.17 dcr690g52 26.84 26.29 dcr590g65 27.1 26.55 dcr470g85 27.46 26.91 clamping force: 11.5 kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: g fig.16 package outline
semiconductor dcr590g65 10/10 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. stresses above those listed in this data sheet may cause permanent damage to the device. in extreme c onditions, as with all semiconductors, this may include potentially hazard ous rupture of the package. appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom. this publication is issued to provide information only wh ich (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user?s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the company?s conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.
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