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september 2008 rev 2 1/18 18 STB30NM50N,sti30 nm50n,stf30nm50n stp30nm50n, stw30nm50n n-channel 500 v, 0.090 ? , 27 a mdmesh? ii power mosfet d 2 pak, i 2 pak, to-220fp, to-220, to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices is designed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on- resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d STB30NM50N 550 v < 0.115 ? 27 a sti30nm50n 550 v < 0.115 ? 27 a stf30nm50n 550 v < 0.115 ? 27 a (1) 1. limited only by maximum temperature allowed stp30nm50n 550 v < 0.115 ? 27 a stw30nm50n 550 v < 0.115 ? 27 a 1 3 1 2 3 1 2 3 1 2 3 1 2 3 d2pak i2pak to-220 to-247 to-220fp table 1. device summary order codes marking package packaging STB30NM50N 30nm50n d2pak tape and reel sti30nm50n 30nm50n i2pak tube stf30nm50n 30nm50n to-220fp tube stp30nm50n 30nm50n to-220 tube stw30nm50n 30nm50n to-247 tube www.st.com obsolete product(s) - obsolete product(s)
contents stb/i/f/p/w30nm50n 2/18 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 obsolete product(s) - obsolete product(s) stb/i/f/p/w30nm50n electrical ratings 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak/i2pak to-220/to-247 to-220fp v ds drain-source voltage (v gs =0) 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 27 27 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 17 17 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 108 108 (1) a p tot total dissipation at t c = 25 c 190 40 w dv/dt (3) 3. i sd 27 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter i2pak to-220 d2pak to-220fp to-247 unit r thj-case thermal resistance junction- case max 0.66 3.1 0.66 c/w r thj-pcb thermal resistance junction- pcb max -- -- 30 -- -- c/w r thj-amb thermal resistance junction- amb max 62.5 -- 62.5 50 c/w t l maximum lead temperature for soldering purposes 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 900 mj obsolete product(s) - obsolete product(s) electrical characterist ics stb/i/f/p/w30nm50n 4/18 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on static drain-source on resistance v gs = 10 v, i d = 13.5 a 0.090 0.115 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 13.5 a 23 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 2740 160 15 pf pf pf r g gate input resistance f=1mhz gate dc bias=0 test signal level=20 mv open drain 2.7 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 27 a, v gs = 10 v (see figure 19) 94 15 50 nc nc nc obsolete product(s) - obsolete product(s) stb/i/f/p/w30nm50n electr ical characteristics 5/18 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 250 v, i d = 13.5 a, r g = 4.7 ?, v gs = 10 v (see figure 18) 23 20 115 60 ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 27 108 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 27 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 27 a, di/dt = 100 a/s v dd = 100 v tj = 25c (see figure 20) 480 8 33 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 27 a, di/dt = 100 a/s v dd = 100 v tj = 150c (see figure 20) 540 10 35 ns c a obsolete product(s) - obsolete product(s) electrical characterist ics stb/i/f/p/w30nm50n 6/18 2.1 electrical characteri stics (curves) figure 2. safe operating area for to-220 / d2pak / i2pak figure 3. thermal impedance for to-220 / d2pak / i2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $ 3 6 ! / p e r a t i n g i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ? s m s m s ! - v gc20540 0.2 =0.5 0.05 0.02 0.01 0.1 s ingle p u l s e t p 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k zth=k rthj-c =tp/ ) $ 6 $ 3 6 ! / p e r a t i n g i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ? s m s m s ! - v gc20521 0.2 =0.5 0.05 0.02 0.01 0.1 s ingle p u l s e zth=k rthj-c =t p / t p 10 -4 10 - 3 10 -2 10 -1 10 0 t p ( s ) 10 - 3 10 -2 10 -1 k ) $ 6 $ 3 6 ! / p e r a t i n g i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ? s m s m s ! - v gc1 8 460 0.2 =0.5 0.05 0.02 0.01 0.1 s ingle p u l s e zth=k rthj-c =tp/ t p 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 - 3 10 -2 10 -1 k obsolete product(s) - obsolete product(s) stb/i/f/p/w30nm50n electr ical characteristics 7/18 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations 4v 5v v g s =10v i d 0 20 v d s (v) (a) 10 3 0 0 5 20 25 10 15 3 0 3 5 am00941v1 ) $ 6 ' 3 6 ! ! - v ) $ ) $ ! ! 4 * ? # 4 * ? # 4 * ? # ! - v r d s (on) 0 3 0 i d (a) ( ? ) 5 0.0 8 4 0.0 8 6 0.090 0.092 0.0 88 0.094 10 15 25 am00944v1 v dd =400v i d =27a v g s 0 8 0 q g (nc) (v) 20 0 2 6 8 4 10 40 60 12 100 am00945v1 # p & |