di gital transistors (built-in resistors) umc3n digital transistor (npn+pnp) features z dta114e and dtc114e transistors are built-in a package z ideal for power switch circuits z mounting cost and area can be cut in half marking: c3 npn dtc114e absolute maximum ratings (ta=25 ) electrical characteristics (ta=25 ) parameter sy mbol min typ max unit conditions v i(off) 0.5 v cc =5v ,i o =100 a input voltage v i(on) 3 v v o =0.3v ,i o =10ma output voltage v o(on) 0.3 v i o /i i =10ma/0.5ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 30 v o =5v,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz pnp dta114e absolute maximum ratings (ta=25 ) electrical characteristics (ta=25 ) parameter sy mbol min typ max unit conditions v i(off) -0.5 v cc =-5v ,i o =-100 a input voltage v i(on) -3 v v o =-0.3v ,i o =-10ma output voltage v o(on) -0.3 v i o /i i =-10ma/-0.5ma input current i i -0.88 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 30 v o =-5v,i o =-5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =-10v ,i e =5ma,f=100mhz parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~ + 40 v i o 50 output current i cm 1 00 ma power dissipation p d 150 mw junction temperature tj 150 storage temperature tstg -55~150 parameter symbol limits unit supply voltage v cc -50 v input voltage v in -40~ + 10 v i o -50 output current i cm -100 ma power dissipation p d 150 mw junction temperature tj 150 storage temperature tstg -55~150 sot-353 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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