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AD9973 C4020 EFE19E 01210 3386W201 BYM26B 587P8915 A4470
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  d i g i t r o n s e m i c o n d u c t o r s 144 market street kenilworth nj 07033 usa phone +1.908.245 - 7200 fax +1.908.245 - 0555 sales@digitroncorp.com www.digitroncorp.com rev. 2 0120 911 1n4099 - 1n4135 & 1n4614 - 1N4627 silicon 500mw low noise zener diodes maximum ratings junction and storage temperatures: - 65c to +200c dc power dissipation: 500mw power derating: 4.0mw/c above 50c in do - 35 forward voltage @ 2 00ma: @ 100ma: 1.1 volts 1n4099 - 1n4135 1.0 volts 1n4614 - 1N4627 electrical characteristics @ 25c nominal zener voltage v z @ l zt ( no te 1) zener test current l zt maximum zener impedance z zt ( n ote 2) maximum reverse current l z @ v r maximum noise density n d @ l zt maximum zener current l zm ( n ote 3) maximum temp. coeff. of zener voltage vz type no. volts a ohms a volts v/hz ma %/c 1n4614 1.8 250 1200 7.5 1 1 120 - 0.075 1n4615 2.0 250 1250 5.0 1 1 110 - 0.075 1n4616 2.2 250 1300 4.0 1 1 100 - 0.075 1n4617 2.4 250 1400 2.0 1 1 95 - 0.075 1n4618 2.7 250 1500 1.0 1 1 90 - 0.075 1n4619 3.0 250 1600 0.8 1 1 87 - 0.075 1n4620 3.3 250 1650 7.5 1.5 1 85 - 0.075 1n4621 3.6 250 1700 7.5 2 1 83 - 0.065 1n4622 3.9 250 1650 5.0 2 1 80 - 0.060 1n4623 4.3 250 1600 4.0 2 1 77 - 0.050 1n4624 4.7 250 1550 10.0 3 1 75 - 0.050+0.020 1n4625 5.1 250 1500 10.0 3 2 70 - 0.045+0.030 1n4626 5.6 250 1400 10.0 4 4 65 - 0.020+0.040 1N4627 6.2 250 1200 10.0 5 5 61 - 0.010+0.050 1n4099 6.8 250 200 10.0 5.17 40 56 0.060 1n4100 7.5 250 200 10.0 5.70 40 51 0.065 1n4101 8.2 250 200 1.0 6.24 40 46 0.070 1n4102 8.7 250 200 1.0 6.61 40 44 0.075 1n4103 9.1 250 200 1.0 6.92 40 42 0.080 1n4104 10 250 200 1.0 7.60 40 38 0.080 1n4105 11 250 200 . 0 5 8.44 40 35 0.080 1n4106 12 250 200 . 0 5 9.12 40 32 0.080 1n4107 13 250 200 . 0 5 9.87 40 29 0.080 1n4108 14 250 200 . 0 5 10.65 40 27 0.085 1n4109 15 250 100 . 0 5 11.40 40 25 0.085 1n4110 16 250 100 . 0 5 12.15 40 24 0.085 1n4111 17 250 100 . 0 5 12.92 40 22 0.090 1n411 2 18 250 100 . 0 5 13.67 40 21 0.090 1n4113 19 250 150 . 0 5 14.44 40 20 0.090 1n4114 20 250 150 .01 15.20 40 19 0.090 1n4115 22 250 150 .01 16.72 40 17 0.090 1n4116 24 250 150 .01 18.25 40 16 0.090 1n4117 25 250 150 .01 19.00 40 15 0.090 1n4118 27 250 1 50 .01 20.45 40 14 0.090 1n4119 28 250 200 .01 21.28 40 14 0.095 1n4120 30 250 200 .01 22.80 40 13 0.095 1n4121 33 250 200 .01 25.08 40 12 0.095 1n4122 36 250 200 .01 27.38 40 11 0.095 1n4123 39 250 200 .01 29.65 40 9.8 0.095 1n4124 43 250 250 .01 32 .65 40 8.9 0.095 1n4125 47 250 250 .01 35.75 40 8.1 0.095 1n4126 51 250 300 .01 38.76 40 7.5 0.100 1n4127 56 250 300 .01 42.60 40 6.7 0.100
d i g i t r o n s e m i c o n d u c t o r s 144 market street kenilworth nj 07033 usa phone +1.908.245 - 7200 fax +1.908.245 - 0555 sales@digitroncorp.com www.digitroncorp.com rev. 2 0120 911 1n4099 - 1n4135 & 1n4614 - 1N4627 silicon 500mw low noise zener diodes electrical characteristics @ 25c nominal zener voltage v z @ l zt ( n ote 1) zener test current l zt maximum zener impedance z zt ( n ote 2) maximum reverse current l z @ v r maximum noise density n d @ l zt maximum zener current l zm ( n ote 3) maximum temp. coeff. of zener volt age vz jedec type no. volts a ohms a volts v/hz ma %/c 1n4128 60 250 400 .01 45.60 40 6.4 0.100 1n4129 62 250 500 .01 47.10 40 6.1 0.100 1n4130 68 250 700 .01 51.68 40 5.6 0.100 1n4131 75 250 700 .01 57.00 40 5.1 0.100 1n4132 82 250 800 .01 62.32 40 4.6 0.10 0 1n4133 87 250 1000 .01 66.12 40 4.4 0.100 1n4134 91 250 1200 .01 69.16 40 4.2 0.100 1n4135 100 250 1500 .01 76.00 40 3.8 0.100 note 1: no suffix shows a standard tolerance of +/ - 5% on the nominal zener voltage. also available in 2% and 1% tolerance , suffix c and d respectively. v z is measured with the diode in thermal equilibrium in 25c still air. note 2: zener impedance is derived by superimposing on l zt , a 60hz rms a.c. current equal to 10% of l zt (25a a.c.) note 3: based upon 400mw maximum power dissipation at 75clead temperature, allowance has been made for the higher voltage associated with operation at higher currents. mechanical characteristics case: g lass do - 35 thermal resistance: 200c/w junction to lead at 0.375 from body in do - 35. metallurgically bonded do - 35s exhibit less than 100c/w at zero distance from body polarity: cathode band available non - rohs (standard) or rohs compliant (add pbf suffix) a vailable as hr (high reliability) screened per mil - prf - 19500, jantx level. add hr suffix to base part number dimensions 1n4099 - 1n4135 1n4614 - 1N4627 do - 35 inches millimeters ltr. min max min max bd 0.055 0.090 1.400 2.290 bl 0.120 0.200 3.050 5.080 ld 0.018 0.022 0.460 0.560 ll 1.000 1.500 25.400 38.100
d i g i t r o n s e m i c o n d u c t o r s 144 market street kenilworth nj 07033 usa phone +1.908.245 - 7200 fax +1.908.245 - 0555 sales@digitroncorp.com www.digitroncorp.com rev. 2 0120 911 1n4099 - 1n4135 & 1n4614 - 1N4627 silicon 500mw low noise zener diodes


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