june 2011 doc id 16600 rev 3 1/10 10 3STR1630 low voltage high performance npn power transistor features very low collector-emitt er saturation voltage high current gain characteristic fast switching speed miniature sot-23 plastic package ecopack ? 2 grade for surface mounting circuits applications strobe and led drives motor and relay drives dc-dc converters description this device is an npn transistor manufactured using low voltage planar technology with a double-metal process. figure 1. internal schematic diagram sot-23 1 3 2 table 1. device summary order code marking package packing 3STR1630 1630 sot-23 tape and reel www.st.com
electrical ratings 3STR1630 2/10 doc id 16600 rev 3 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 30 v v ceo collector-emitter voltage (i b = 0) 30 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 6 a i cm collector peak current (t p < 5 ms) 12 a p tot total dissipation at t amb = 25 c 0.5 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thja (1) 1. device mounted on pcb area of 1 cm2. thermal resistance junction-ambient max 250 c/w
3STR1630 electrical characteristics doc id 16600 rev 3 3/10 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 30 v 0.1 a i ebo emitter cut-off current (i c = 0) v eb = 4 v 0.1 a v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 30 v v (br)ceo (1) 1. pulse test: pulse duration 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 10 ma 30 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 5 v v ce(sat) (1) collector-emitter saturation voltage i c = 1 a i b = 100 ma i c = 2 a i b = 40 ma i c = 5 a i b = 500 ma 60 140 240 90 190 300 mv mv mv v be(sat) (1) base-emitter saturation voltage i c = 2 a i b = 40 ma i c = 5 a i b = 500 ma 830 1000 1100 mv mv h fe (1) dc current gain i c = 50 ma v ce = 2 v i c = 0.5 a v ce = 2 v i c = 2 a v ce = 2 v i c = 5 a v ce = 2 v 210 180 170 260 90 560 f t transition frequency i c = 0.1 a v ce = 10 v 100 mhz c cbo collector-base capacitance (i e = 0) v cb = 40 v, f = 1 mhz 15 pf t on t off resistive load turn-on time turn-off time i c = 2.5 a v cc = 12 v i b1 = - i b2 = 125 ma v be(off) = - 5 v 90 450 ns ns
electrical characteristics 3STR1630 4/10 doc id 16600 rev 3 2.1 electrical characteristics (curves) figure 2. dc current gain (v ce =1 v) figure 3. dc current gain (v ce =2 v) figure 4. collector-emitter saturation voltage (v cesat @ h fe =10) figure 5. collector-emitter saturation voltage (v cesat @ h fe =50) figure 6. base-emitter saturation voltage (v besat @ h fe =10) figure 7. base-emitter saturation voltage (v besat @ h fe =50) ! - v , f $ ? # ? #
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