CLA50E1200TC single thyristor high efficiency thyristor 2 1 3 part number CLA50E1200TC backside: anode tav t vv 1.27 rrm 50 1200 = v= v i= a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-268aa (d3pak) industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20121221b data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
CLA50E1200TC v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.32 r 0.25 k/w min. 50 v v 50 t = 25c vj t = c vj ma 4 v = v t = 25c vj i = a t v t = c c 125 p tot 500 w t = 25c c 50 1200 forward voltage drop total power dissipation conditions unit 1.60 t = 25c vj 125 v t0 v 0.88 t = c vj 150 r t 7.7 m ? v 1.27 t = c vj i = a t v 50 1.65 i = a 100 i = a 100 threshold voltage slope resistance for power loss calculation only a 125 v v 1200 t = 25c vj i a 79 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0.5 average gate power dissipation c j 25 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 650 700 1.54 1.48 a a a a 555 595 2.12 2.04 1200 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 150c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t=150c critical rate of rise of voltage a/s 500 v/s t = s; ia;v = ? v r = ; method 1 (linear voltage rise) vj d vj 150 a t p g =0.3 di /dt a/s; g =0.3 d drm cr v = ? v d drm gk 1000 1.5 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 50 ma t= c -40 vj 1.6 v 80 ma v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 3ma v = ? v d drm 150 latching current t= c vj 125 ma i l 25 ts p =10 ia; g = 0.3 di /dt a/s g =0.3 holding current t= c vj 100 ma i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.3 di /dt a/s g =0.3 v = ? v d drm turn-off time t= c vj 200 s t q di/dt = a/s; 10 dv/dt = v/s; 20 v = r 100 v; i a; t =50 v = ? v d drm t s p = 200 non-repet., i = 50 a t 150 r thch thermal resistance case to heatsink k/w thyristor 1300 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 0.15 ixys reserves the right to change limits, conditions and dimensions. 20121221b data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
CLA50E1200TC ratings product mar k i n g date code part no. logo abcd ixys assembly code assembly line yyww z c l a 50 e 1200 tc part number thyristor (scr) high efficiency thyristor (up to 1200v) single thyristor to-268aa (d3pak) (2) = = = current rating [a] reverse voltage [v] = = = = package t vj c t stg c 150 storage temperature -55 weight g 5 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 150 -40 to-268aa ( d3pak ) similar part package voltage class cla50e1200hb to-247ad (3) 1200 delivery mode quantity code no. part number marking on product ordering CLA50E1200TC 502708 tube 30 CLA50E1200TC standard threshold voltage v 0.88 m ? v 0 max r 0 max slope resistance * 5.2 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20121221b data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
CLA50E1200TC min max min max a 4.90 5.10 0.193 0.201 a1 2.70 2.90 0.106 0.114 a2 0.02 0.25 0.001 0.100 b 1.15 1.45 0.045 0.057 b2 1.90 2.10 0.075 0.083 c 0.40 0.65 0.016 0.026 c2 1.45 1.60 0.057 0.063 d 13.80 14.00 0.543 0.551 d1 12.40 12.70 0.488 0.500 e 15.85 16.05 0.624 0.632 e1 13.30 13.60 0.524 0.535 e h 18.70 19.10 0.736 0.752 l 2.40 2.70 0.094 0.106 l1 1.20 1.40 0.047 0.055 l2 1.00 1.15 0.039 0.045 l3 l4 3.80 4.10 0.150 0.161 0.25 bsc 0.100 bsc dim. millimeter inches 5.45 bsc 0.215 bsc 2 1 3 outlines to-268aa (d3pak) ixys reserves the right to change limits, conditions and dimensions. 20121221b data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
CLA50E1200TC 0 40 80 120 160 0 10 20 30 40 50 60 70 80 10 100 1000 1 10 100 1000 0.01 0.1 1 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 0 30 60 90 120 150 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 i t [a] t[s] v t [v] 234567890 1 1 100 1000 10000 i 2 t [a 2 s] t[ms] i tsm [a] t vj = 25c t vj =125c t vj = 45c 50 hz, 80% v rrm t vj =125c t vj =45c v r =0 v v g [v] i g [ma] i tavm [a] t case [c] z thjc [k/w] t[s] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current fig. 6 max. forward current at case temperature fig. 7 transient thermal impedance junction to case t gd [ s] i g [a] lim. typ. fig. 5 gate controlled delay time t gd 0 204060 0 20 40 60 80 100 i f(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fi g . 7b and ambient tem p erature 050100150 t amb [c] t vj =125c dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 1 10 100 1000 10000 0.1 1 10 4: p gav =0.5w 5: p gm =1w 6: p gm =10w 1: i gd ,t vj =150c 2: i gt ,t vj =25c 3: i gt ,t vj =-40c ir thi (k/w) t i (s) 1 0.075 0.0011 2 0.17 0.0019 3 0.057 0.0115 4 0.158 0.12 5 0.0105 0.5 r thha 0.4 0.6 0.8 1.0 2.0 4.0 1 2 3 4 5 6 thyristor ixys reserves the right to change limits, conditions and dimensions. 20121221b data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
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