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absolute maximum ratings parameter units i d @ v gs = -12v, t c =25c continuous drain current -45 i d @ v gs = -12v, t c =100c continuous drain current -28.5 i dm pulsed drain current -180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 480 mj i ar avalanche current -45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak d iode recovery dv/dt -6.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )).the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a radiation hardened JANSR2N7550T1 power mosfet 100v, p-channel thru-hole (low-ohmic to-254aa) ref: mil-prf-19500/713 www.irf.com 1 technology product summary part number radiation level r ds(on) i d qpl part number irhms597160 100k rads (si) 0.05 ? -45a JANSR2N7550T1 irhms593160 300k rads (si) 0.05 ? -45a jansf2n7550t1 for footnotes refer to the last page features: single event effect (see) hardened identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed electically isolated ceramic eyelets light weight high electrical conductive package low-ohmic to-254aa irhms597160 pd-94283e
irhms597160, JANSR2N7550T1 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -45 i sm pulse source current (body diode) ? ? -180 v sd diode forward voltage ? ? -5.0 t j = 25c, i s = -45a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f =-45a, di/dt -100a/ s q rr reverse recovery charge ? ? 1.6 cv dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.13 ? reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.05 v gs = -12v, i d = -28.5a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v ds = v gs , i d = -1.0ma g fs forward transconductance 24 ? ? v ds > -15v, i ds = -28.5a i dss zero gate voltage drain current ? ? -10 v ds = -80v ,v gs =0v ? ? -25 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 170 v gs =-12v, i d = -45a q gs gate-to-source charge ? ? 65 v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 30 t d (on) turn-on delay time ? ? 35 v dd = -50v, i d = -45a t r rise time ? ? 100 v gs =-12v, r g = 1.2 ? t d (off) turn-off delay time ? ? 100 t f fall time ? ? 100 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 6110 ? v gs = 0v, v ds = -25v c oss output capacitance ? 1574 ? f = 1.0mhz c rss reverse transfer capacitance ? 115 ? nh note: corresponding spice and saber models are available on international rectifier website. thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.6 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 typical socket mount measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad v/c v ? v s v a na nc ns pf
www.irf.com 3 pre-irradiation irhms597160, JANSR2N7550T1 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =17.5v br 37.9 252.6 33.1 -100 -100 -100 -100 -100 i 59.7 314 30.5 -100 -100 -100 -100 -75 au 82.3 350 28.4 -100 -100 -100 -30 ? -100 -25 ? @v gs =20v table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds = -80v, v gs =0v r ds(on) static drain-to-source ? 0.05 ? 0.05 ? v gs = -12v, i d =-28.5a on-state resistance (to-3) v sd diode forward voltage ? -5.0 ? -5.0 v v gs = 0v, i s = -45a 1. part number irhms597160 (JANSR2N7550T1) 2. part number irhms593160 (jansf2n7550t1) -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds br i au
irhms597160, JANSR2N7550T1 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 5.0 5.5 6.0 6.5 7.0 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -45a
www.irf.com 5 pre-irradiation irhms597160, JANSR2N7550T1
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -45a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 1000 0.0 1.5 3.0 4.5 6.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhms597160, JANSR2N7550T1 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 %

+ - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2
www.irf.com 7 pre-irradiation irhms597160, JANSR2N7550T1 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -20a -28.5a -45a
irhms597160, JANSR2N7550T1 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -50v, starting t j = 25c, l=0.48mh peak i l = -45a, v gs = -12v i sd -45a, di/dt -365a/ s, v dd -100v, t j 150c footnotes: case outline and dimensions ? low-omic to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2007 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not e s : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

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