cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 1/10 MTBA5C10Q8 cystek product specification n- and p-channel logic level enhancement mode mosfet MTBA5C10Q8 n-ch p-ch bv dss 100v -100v i d 3a -2.5a r dson(max.) 150m 250m description the MTBA5C10Q8 consists of a n-channel and a p-channel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combination of fast sw itching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline MTBA5C10Q8 d drain g gate s source sop-8
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 2/10 MTBA5C10Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 100 -100 v gate-source voltage v gs 20 20 v continuous drain current @t c =25 c i d 3 -2.5 a continuous drain current @t c =100 c i d 2.1 -1.8 a pulsed drain current (note 1) i dm 12 -10 a power dissipation @t a =25 c 2.4 power dissipation @t a =100 c p d 1.3 w operating junction and storage temperature range tj; tstg -55~+175 c thermal resistance, junction-to-case r jc 25 c/w thermal resistance, junction-to-ambient (note 2) r ja 62.5 c/w note : 1.pulse width limited by maximum juncti on temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, 135 c/w when mounted on minimum copper pad. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0, i d =250 a v gs(th) 1.0 - 3.0 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 - - 1 a v ds =80v, v gs =0 i dss - - 25 a v ds =70v, v gs =0, tj=125 c *i d(on) 12 - - a v gs =10v, v ds =5v - 125 150 i d =2.5a, v gs =10v *r ds(on) - 168 225 m i d =2a, v gs =5v *g fs - 8 - s v ds =5v, i d =2.5a dynamic ciss - 740 - coss - 62 - crss - 50 - pf v ds =20v, v gs =0, f=1mhz *td (on) - 15 - *tr - 35 - *td (off) - 25 - *tf - 25 - ns v ds =50v, i d =1a, v gs =10v, r g =6 *qg - 18.8 - *qgs - 3.8 - *qgd - 4.5 - nc v ds =80v, i d =2.5a, v gs =10v body diode *v f(s-d) - - 1.3 v v gs= 0v, i f =3a *i s - 3 - *i sm - 12 - a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 3/10 MTBA5C10Q8 cystek product specification p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -100 - - v gs =0, i d =-250 a v gs(th) -1.0 - -3.0 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =20v, v ds =0 - - -1 v ds =-80v, v gs =0 i dss - - -25 a v ds =-70v, v gs =0, tj=125 c i d(on) -10 - - a v gs =-10v, v ds =-5v - 210 250 i d =-1.5a, v gs =-10v *r ds(on) - 280 375 m i d =-1a, v gs =-5v *g fs - 7 - s v ds =-5v, i d =-1.5a dynamic ciss - 1066 - coss - 365 - crss - 55 - pf v ds =-20v, v gs =0, f=1mhz *td (on) - 12 - *tr - 55 - *td (off) - 40 - *tf - 40 - ns v ds =-50v, i d =-1a, v gs =-10v, r g =6 *qg - 31 - *qgs - 6.3 - *qgd - 4.5 - nc v ds =-80v, i d =-1.5a, v gs =-10v body diode *v f(s-d) - - 1.3 v v gs =0v, i f =2.5a *i s - - -2.5 *i sm - - -10 a *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTBA5C10Q8 sop-8 (pb-free lead plating & halogen-freepackage) 2500 pcs / tape & reel ba5c10
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 4/10 MTBA5C10Q8 cystek product specification n-channel characteristic curves v - drain-source voltage( v ) i - drain current( a ) 0 0 d 3 ds 1 2 8.0v v = 10v 6 9 7.0v gs 5.0v 3 45 on-region characteristics 15 12 6.0v r -normalized drain-source on-resistance ds(on) on-resistance variati on with drain current and gate voltage 6.0 v 1.6 0.8 0 1.2 1.0 1.4 36 2.2 1.8 2.0 2.4 912 7.0 v 8.0 v 10 v 15 i - drain current( a ) d gs v = 5.0 v on-resistance variation with temperature r - normalized drain-source on-resistance ds(on) t - junction temperature (c) 0.4 -50 0.7 1.0 0 j -25 25 d i = 2.5a v = 10v 1.3 1.6 1.9 gs 125 50 75 100 150 on-resistance va riation with gate-source voltage t = 125c v - gate-source voltage( v ) 0.05 2 ds(on) 0.10 0.20 0.15 gs 4 6 t = 25c a a 0.40 0.30 0.25 0.35 0.45 81 0 i = 1.5 a d r - on-resistance( ) body diode forward voltage variation with source current and temperature 25c t = 125c v - body diode forward voltage( v ) is - reverse drain current( a ) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.00.8 1.2 -55c 1.4 t = -55c v - gate-source voltage( v ) i - drain current( a ) 2 d 2 0 4 3 gs v = 10v 8 6 10 12 ds a 5 4 6 25c 125c transfer characteristics
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 5/10 MTBA5C10Q8 cystek product specification n-channel characteri stic curves(cont.) q - gate charge( nc ) v - gate source voltage( v ) gs 0 0 2 4 g 5 10 i = 2.5a 6 8 10 d 15 20 80v v = 50v ds gate charge characteristics v - d rain-source voltage( v ) capacitance( pf ) 400 0 0 200 ds 20 crss coss 600 1000 ciss 40 60 80 gs f = 1mhz v = 0 v capacitance characteristics 100 100 300 500 900 800 700 d c v - drain-source voltage( v ) i - drain current( a ) v = 10v single pulse r = 125c/w t = 25c d ds ja a gs r l i m i t d s ( o n ) 0.01 0.1 1 10 100 1 0 0 m s 1 0 m s 1 m s 1 0 0 u s maximum safe operating area 1 0 us 10 100 1 1000 0.1 p( pk ),peak transient power( w ) 20 0 10 30 40 50 single pulse r = 125c/w t = 25c a ja t ,time ( sec ) 0.001 0.01 0.1 1 100 10 1 1000 single pulse maximum power dissipation -1 t ,time (sec) transient thermal response curve r( t ),normalized effective transient thermal resistance 10 0.001 -4 0.01 0.02 10 -3 10 -2 10 single pulse 0.01 duty cycle = 0.5 0.1 0.1 0.05 0.2 1 p ja 4.r (t)=r(t) + r 3.t - t = p * r (t) ja 2.r =125c/w 1.duty cycle,d = dm 1 1 10 j 1000 100 t1 t2 ja ja a t2 t1 notes :
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 6/10 MTBA5C10Q8 cystek product specification p-channel characteristic curves on-resistance variation with temperature t - junction temperature (c) r - normali zed drain-source on-resistance -50 0.4 ds(on) 0.7 1.0 0 j -25 25 d i = -1.5a v = - 10v 1.3 1.6 1.9 gs 125 50 75 100 150 on-resistance variation with gate-source voltage t = 25c t = 125c - v - gate-source voltage( v ) 6 r - on-resistance( ) 0 2 ds(on) 0.20 gs 4 a 0.40 0.60 0.80 8 a 10 i = - 1 a d - 6.0v -v - drain-source voltage( v ) 6 -i - drain current( a ) 0 0 d 2 4 ds 1 2 - 7.0v v = - 10.0v - 8.0v 8 10 gs 3 45 - 5.0v on-region characteristics - 9.0v on-resistance variation with drain current and gate voltage - i - drain current(a) r -normalized drain-source on-resistance 1.5 0.5 0 ds(on) 1 2 d 4 gs v = - 5.0 v 2 - 6.0 v - 8.0 v 68 - 9.0 v - 10.0 v 10 - 7.0 v 2.5 on-resistance variation with gate-source voltage t = 25c t = 125c - v - gate-source voltage( v ) 6 r - on-resistance( ) 0 2 ds(on) 0.20 gs 4 a 0.40 0.60 0.80 8 a 10 i = - 1 a d on-resistance variation with temperature t - junction temperature (c) r - normali zed drain-source on-resistance -50 0.4 ds(on) 0.7 1.0 0 j -25 25 d i = -1.5a v = - 10v 1.3 1.6 1.9 gs 125 50 75 100 150
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 7/10 MTBA5C10Q8 cystek product specification p-channel characteristic curves(cont.) v = - 50v q - gate charge(nc) - v - gate-source voltage( v ) gs 0 0 2 4 10 g d i = - 1.5a 6 8 10 20 30 40 - 80v ds gate charge characteristics -v - drain-source voltage( v ) capacitance( pf ) 600 0 0 300 ds 20 crss coss 900 1500 ciss 40 60 80 gs f = 1m hz v = 0 v capacitance characteristics 100 150 450 750 1350 1200 1050 p( pk ),peak transient power( w ) 20 0 10 30 40 50 single pulse r = 125c/w t = 25c a ja t ,time ( sec ) 0.001 0.01 0.1 1 100 10 1 1000 single pulse maximum power dissipation d c -v - drain-source voltage( v ) -i - drain current( a ) v = -10v single pulse r = 125c/w t = 25c d ds ja a gs r l i m i t d s( o n ) 0.01 0.1 1 10 100 1 0 0 ms 1 0 m s 1 m s 1 0 0 u s maximum safe operating area 1 0 u s 10 100 1 1000 0.1 -1 t ,time (sec) transient thermal response curve r( t ),normalized effective transient thermal resistance 10 0.001 -4 0.01 0.02 10 -3 10 -2 10 single pulse 0.01 duty cycle = 0.5 0.1 0.1 0.05 0.2 1 p ja 4.r (t)=r(t) + r 3.t - t = p * r (t) ja 2.r =125c/w 1.duty cycle,d = dm 1 1 10 j 1000 100 t1 t2 ja ja a t2 t1 notes :
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 8/10 MTBA5C10Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 9/10 MTBA5C10Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c744q8 issued date : 2009.10.16 revised date : 2011.10.03 page no. : 10/10 MTBA5C10Q8 cystek product specification sop-8 dimension marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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