S8050 features power dissipation p cm : 0.625 w tamb=25 collector current i cm : 0.5 a collector-base voltage v (br)cbo : 40 v electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo ic= 0.1 ma i b =0 25 v emitter-base breakdown voltage v(br) ebo i e = 100 a i c =0 5 v collector cut-off current i cbo v cb = 40 v , i e =0 0.1 a collector cut-off current i ceo v ce = 20 v , i b =0 0.1 a emitter cut-off current i ebo v eb = 5 v i c =0 0.1 a h fe 1 v ce = 1 v, i c = 50ma 85 300 dc current gain(note) h fe 2 v ce = 1 v, i c = 500ma 50 collector-emitter saturation voltage v ce (sat) i c = 500ma, i b = 50 ma 0.6 v base-emitter saturation voltage v be (sat) i c = 500ma, i b = 50 ma 1.2 v base-emitter voltage v be i e = 100ma 1.4 v transition frequency f t v ce = 6 v, i c = 20ma f = 30mhz 150 mhz classification of h fe(1) rank bcd range 85-160 120-200 160-300 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 2 3
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