this is information on a product in full production. october 2012 doc id 023605 rev 2 1/8 8 stpsc20h065c 650 v power schottky silicon carbide diode datasheet ? production data features no or negligible reverse recovery switching behavior independent of temperature dedicated to pfc applications high forward surge capability description the sic diode is an ultrahigh performance power schottky diode. it is manufactured using a silicon carbide substrate. the wide bandgap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature. especially suited for use in pfc applications, this st sic diode will boost the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. table 1. device summary symbol value i f(av) 2 x 10 a v rrm 650 v t j (max) 175 c k (2) a1 (1) a2 (3) a1 k a2 a1 k a2 to-220ab STPSC20H065CT to-247 stpsc20h065cw www.st.com
characteristics stpsc20h065c 2/8 doc id 023605 rev 2 1 characteristics when the two diodes 1 and 2 are used simultaneously: ? t j (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 1.35 x i f(av) + 0.115 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current, ? = 0.5 t c = 120 c, per diode 10 a t c = 105 c, per device 20 i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 90 80 470 a i frm repetitive peak forward current t c = 120 c,t j = 150 c, ? = 0.1 36 a t stg storage temperature range -55 to +175 c t j operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance (typical values) symbol parameter value unit typ. max. r th(j-c) junction to case per diode per diode to-247 1.25 1.5 c/w to-220ab to t a l to-247 0.83 0.95 to-220ab r th(c) coupling 0.4 table 4. static electrical characteristics per diode symbol parameter tests conditions min. typ. max. unit i r (1) 1. t p = 10 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm -9100 a t j = 150 c - 85 425 v f (2) 2. t p = 500 s, ? < 2% forward voltage drop t j = 25 c i f = 10 a -1.561.75 v t j = 150 c - 1.98 2.5 dptot dtj --------------- 1 rth j a ? ?? ------------------------- - ?
stpsc20h065c characteristics doc id 023605 rev 2 3/8 table 5. dynamic electrical characteristics per diode symbol parameter test conditions typ. unit q cj (1) total capacitive charge v r = 400 v 28.5 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 480 pf v r = 400 v, t c = 25 c, f = 1 mhz 48 1. most accurate value for the capacitive charge: q = c j (v r ).dv r cj v out 0 figure 1. forward voltage drop versus forward current (typical values per diode, low level) figure 2. forward voltage drop versus forward current (typical values per diode, high level) a) i fm ( 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =150 c t a =175 c t a =25 c pulse test : t p =380s v fm (v) i fm (a) 0 10 20 30 40 50 60 70 80 90 100 012345678 t a =150 c t a =175 c t a =25 c pulse test : t p =380s v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values per diode) figure 4. peak forward current versus case temperature, per diode i r (a) 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 50 100 150 200 250 300 350 400 450 500 550 600 650 t j =25 c t j =150 c t j =175 c v r (v) i m (a) 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 = 0.5 = 0.1 = 0.3 = 1 = 0.7 t =tp/t tp t c (c)
characteristics stpsc20h065c 4/8 doc id 023605 rev 2 figure 5. junction capacitance versus reverse voltage applied (typical values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration per diode 0 50 100 150 200 250 300 350 400 450 500 0.1 1.0 10.0 100.0 1000.0 f=1 mhz v osc =30 mv rms t j =25 c v r (v) c j (pf) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) figure 7. non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform) figure 8. total capacitive charges versus reverse voltage applied (typical values per diode) i fsm (a) 1.e+01 1.e+02 1.e+03 1.e-05 1.e-04 1.e-03 1.e-02 t a =25 c t a =125 c t p (s) 0 4 8 12 16 20 24 28 32 0 50 100 150 200 250 300 350 400 v r (v) q cj (nc)
stpsc20h065c package information doc id 023605 rev 2 5/8 2 package information epoxy meets ul94, v0 cooling method: conduction (c) recommended torque value: ? to-220ab 0.4 to 0.6 nm, ? to-247 0.55 nm (1.0 nm maximum) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. to-220ab dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m
package information stpsc20h065c 6/8 doc id 023605 rev 2 table 6. to-247 dimensions ref. dimensions millimeters inches min. typ. max. min. typ max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate protrusion does not exceed 20.5 mm 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounti ng hole is not less than 0.9 mm 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.30 5.50 5.70 0.209 0.216 0.224 e l2 s d c a1 back view heat-sink plane l1 l b1 b2 b a e 1 1 2 2 3 3 ? r ? p
stpsc20h065c ordering information doc id 023605 rev 2 7/8 3 ordering information 4 revision history table 7. ordering information order code marking package we ight base qty delivery mode STPSC20H065CT stpsc20h065c to-220ab 1.86 g 50 tube stpsc20h065cw stpsc20h065cw to-247 4.43 g 30 tube table 8. document revision history date revision changes 31-aug-2012 1 first issue. 10-oct-2012 2 added max. values to ta b l e 3 .
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