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this is information on a product in full production. may 2012 doc id 15321 rev 3 1/ 12 STY112N65M5 n-channel 650 v, 0.019 , 96 a, mdmesh? v power mosfet in max247 package datasheet ? production data features higher v dss rating higher dv/dt capability excellent switching performance easy to drive 100% avalanche tested applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @t jmax r ds(on) max i d STY112N65M5 710 v < 0.022 96 a 1 2 3 max247 ! - v $ ' 3 table 1. device summary order code marking package packaging STY112N65M5 112n65m5 max247 tube www.st.com
contents STY112N65M5 2/ doc id 15321 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 STY112N65M5 electrical ratings doc id 15321 rev 3 3/ 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 96 a i d drain current (continuous) at t c = 100 c 61 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 384 a p tot total dissipation at t c = 25 c 625 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 17 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 2400 mj dv/dt (2) 2. i sd 96 a, di/dt = 400 a/s, v dd = 400 v, peak v ds < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.2 c/w r thj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c electrical characteristics STY112N65M5 4/ doc id 15321 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 48 a 0.019 0.022 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 16870 365 7 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 1333 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 350 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.26 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 48 a, v gs = 10 v (see figure 15 ) - 350 97 118 - nc nc nc STY112N65M5 electrical characteristics doc id 15321 rev 3 5/ table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 64 a, r g = 4.7 , v gs = 10 v (see figure 16 ) (see figure 19 ) - 267 79 53 140 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 96 384 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 96 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 96 a, di/dt = 100 a/s v dd = 100 v (see figure 16 ) - 570 17 60 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 96 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16 ) - 695 26 73 ns c a electrical characteristics STY112N65M5 6/ doc id 15321 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x rd s (on) 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 88 92v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth=k rthj-c =tp/ tp am09125v1 i d 150 100 50 0 0 10 v d s (v) (a) 5 15 200 250 5v 6v 7v v g s =10v 3 00 am0 88 9 3 v1 i d 150 100 50 0 0 4 v g s (v) 8 (a) 2 6 10 200 250 3 00 v d s = 3 0v am0 88 94v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 r d s (on) 0.016 0.014 0 40 i d (a) ( ) 20 60 0.01 8 v g s =10v 8 0 0.020 0.022 am0 88 96v1 STY112N65M5 electrical characteristics doc id 15321 rev 3 7/ figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. output capacitance stored energy figure 13. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v g s 6 4 2 0 0 100 q g (nc) (v) 400 8 200 3 00 10 v dd =520v i d =4 8 a 12 3 00 200 100 0 400 500 v d s v d s (v) am0 88 97v1 # 6 $ 3 6 p & |