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this is information on a product in full production. may 2013 docid018534 rev 4 1/20 20 stgips14k60t sllimm? (small low-loss intel ligent molded module) ipm, 3-phase inverter - 14 a, 60 0 v short-circuit rugged igbt datasheet - production data features ? ipm 14 a, 600 v 3-phase igbt inverter bridge including control ics for gate driving and free- wheeling diodes ? short-circuit rugged igbts ? v ce(sat) negative temperature coefficient ? 3.3 v, 5 v, 15 v cmos/ttl inputs comparators with hysteresis and pull down / pull up resistors ? undervoltage lockout ? internal bootstrap diode ? interlocking function ? shut down function ? dbc substrate leading to low thermal resistance ? isolation rating of 2500 vrms/min ? 4.7 k ? ntc for temperature control ? ul recognized: ul1557 file e81734 applications ? 3-phase inverters for motor drives ? home appliances, such as washing machines, refrigerators, air conditioners and sewing machines description this intelligent power module provides a compact, high performance ac motor drive in a simple, rugged design. combining st proprietary control ics with the most advanced short-circuit- rugged igbt system technology, this device is ideal for 3-phase inverters in applications such as home appliances and air conditioners. sllimm? is a trademark of stmicroelectronics. sdip-25l table 1. device summary order code marking package packaging stgips14k60t gips14k60t sdip-25l tube www.st.com
contents stgips14k60t 2/20 docid018534 rev 4 contents 1 internal block diagram and pi n configuration . . . . . . . . . . . . . . . . . . . . 3 2 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1.1 ntc thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3.2 waveforms definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 docid018534 rev 4 3/20 stgips14k60t internal block diagram and pin configuration 1 internal block diagram and pin configuration figure 1. internal block diagram am09320v2 internal block diagram and pin configuration stgips14k60t 4/20 docid018534 rev 4 figure 2. pin layout (bottom view) table 2. pin description pin n symbol description 1out u high side reference output for u phase 2v boot u bootstrap voltage for u phase 3lin u low side logic input for u phase 4hin u high side logic input for u phase 5v cc low voltage power supply 6out v high side reference output for v phase 7v boot v bootstrap voltage for v phase 8 gnd ground 9lin v low side logic input for v phase 10 hin v high side logic input for v phase 11 out w high side reference output for w phase 12 v boot w bootstrap voltage for w phase 13 lin w low side logic input for w phase 14 hin w high side logic input for w phase 15 sd shut down logic input (active low) 16 t1 ntc thermistor terminal 17 n w negative dc input for w phase 18 w w phase output 19 p positive dc input 20 n v negative dc input for v phase 21 v v phase output 22 p positive dc input 23 n u negative dc input for u phase 24 u u phase output 25 p positive dc input docid018534 rev 4 5/20 stgips14k60t electrical ratings 2 electrical ratings 2.1 absolute maximum ratings table 3. inverter part symbol parameter value unit v pn supply voltage applied between p - n u , n v , n w 450 v v pn(surge) supply voltage (surge) applied between p - n u , n v , n w 500 v v ces each igbt collector emitter voltage (v in (1) = 0) 1. applied between hin i , lin i and g nd for i = u, v, w 600 v i c (2) 2. calculated according to the iterative formula: each igbt continuous collector current at t c = 25c 14 a i cp (3) 3. pulse width limited by max junction temperature each igbt pulsed collector current 30 a p tot each igbt total dissipation at t c = 25c 42 w t scw short circuit withstand time, v ce = 0.5 v (br)ces t j = 125 c, v cc = v boot = 15 v, v in (1) = 0 5 v 5s table 4. control part symbol parameter min. max. unit v out output voltage applied between out u , out v , out w - gnd v boot - 21 v boot + 0.3 v v cc low voltage power supply - 0.3 21 v v cin comparator input voltage - 0.3 v cc + 0.3 v v boot bootstrap voltage - 0.3 620 v v in logic input voltage applied between hin, lin and gnd - 0.3 15 v v sd sd voltage - 0.3 15 v dv out /dt allowed output slew rate 50 v/ns table 5. total system symbol parameter value unit v iso isolation withstand voltage applied between each pin and heatsink plate (ac voltage, t = 60 sec.) 2500 v t c module case operation temperature -40 to 125 c t j power chips operating junction temperature -40 to 150 c i c t c ?? t jmax ?? t c ? r thj c ? v ce sat ?? max ?? t jmax ?? i c t c ?? ? ?? ? ------------------------------------------------------------------------------------------------------- = electrical ratings stgips14k60t 6/20 docid018534 rev 4 2.2 thermal data table 6. thermal data symbol parameter value unit r thjc thermal resistance junction-case single igbt 3 c/w thermal resistance junction-case single diode 5.5 c/w docid018534 rev 4 7/20 stgips14k60t electrical characteristics 3 electrical characteristics t j = 25 c unless otherwise specified. note: t on and t off include the propagation delay time of the internal drive. t c(on) and t c(off) are the switching time of igbt itself under t he internally given gate driving condition. table 7. inverter part symbol parameter test conditions value unit min. typ. max. v ce(sat) collector-emitter saturation voltage v cc = v boot = 15 v, v in (1) = 0 5 v, i c = 7 a -2.12.5 v v cc = v boot = 15 v, v in (1) = 0 5 v, i c = 7 a, t j = 125 c -1.8 i ces collector-cut off current (v in (1) = 0 ?logic state?) v ce = 550 v, v cc = v boot = 15 v - 150 a v f diode forward voltage v in (1) = 0 ?logic state?, i c = 7 a - 2.1 v inductive load switching time and energy t on turn-on time v dd = 300 v, v cc = v boot = 15 v, v in (1) = 0 5 v, i c = 7 a (see figure 5 ) - 270 - ns t c(on) crossover time (on) - 130 - t off turn-off time - 520 - t c(off) crossover time (off) - 140 - t rr reverse recovery time - 130 - e on turn-on switching losses - 150 - j e off turn-off switching losses - 110 - 1. applied between hin i , lin i and g nd for i = u, v, w (lin inputs are active-low). electrical characteristics stgips14k60t 8/20 docid018534 rev 4 figure 3. switching time test circuit note: figure 4 "switching time definition" re fers to hin inputs (active high). for lin inputs (active low), v in polarity must be inverted for turn-on and turn-off. figure 4. switching time definition vboot>vcc rsd l ic vce +5v vcc input 0 1 bus /lin /sd hin vcc dt lvg hvg out boot cp+ gnd am17167v1 v ce i c i c v in t on t c(on) v in(on) 10% i c 90% i c 10% v ce (a) turn-on (b) turn-off t rr 100% i c 100% i c v in v ce t off t c(off) v in(off) 10% v ce 10% i c am09223v1 docid018534 rev 4 9/20 stgips14k60t electrical characteristics 3.1 control part table 8. low voltage power supply (v cc = 15 v unless otherwise specified) symbol parameter test conditions min. typ. max. unit v cc_hys v cc uv hysteresis 1.2 1.5 1.8 v v cc_thon v cc uv turn on threshold 11.5 12 12.5 v v cc_thoff v cc uv turn off threshold 10 10.5 11 v i qccu undervoltage quiescent supply current v cc = 10 v sd = 5 v; lin = 5 v; h in = 0 450 a i qcc quiescent current v cc = 15 v sd = 5 v; lin = 5 v h in = 0 3.5 ma table 9. bootstrapped voltage (v cc = 15 v unless ot herwise specified) symbol parameter test cond itions min. typ. max. unit v bs_hys v bs uv hysteresis 1.2 1.5 1.8 v v bs_thon v bs uv turn on threshold 11.1 11.5 12.1 v v bs_thoff v bs uv turn off threshold 9.8 10 10.6 v i qbsu undervoltage v bs quiescent current v bs < 9 v sd = 5 v; lin and hin = 5 v 70 110 a i qbs v bs quiescent current v bs = 15 v sd = 5 v; lin and hin = 5 v 200 300 a r ds(on) bootstrap driver on resistance lvg on 120 ? table 10. logic inputs (v cc = 15 v unless otherwise specified) symbol parameter test cond itions min. typ. max. unit v il low logic level voltage 0.8 1.1 v v ih high logic level voltage 1.9 2.25 v i hinh hin logic ?1? input bias current hin = 15 v 110 175 260 a i hinl hin logic ?0? input bias current hin = 0 v 1 a i linl lin logic ?1? input bias current lin = 0 v 3 6 20 a i linh lin logic ?0? input bias current lin = 15 v 1 a i sdh sd logic ?0? input bias current sd = 15 v 30 120 300 a i sdl sd logic ?1? input bias current sd = 0 v 3 a dt dead time see figure 9 600 ns electrical characteristics stgips14k60t 10/20 docid018534 rev 4 note: x: don?t care table 11. shut down characteristics (v cc = 15 v unless otherwise specified) symbol parameter test cond itions min. typ. max. unit t sd shut down to high / low side driver propagation delay v out = 0, v boot = v cc , v in = 0 to 3.3 v 50 125 200 ns table 12. truth table condition logic input (v i )output sd lin hin lvg hvg shutdown enable half-bridge tri-state lxxll interlocking half-bridge tri-state hlhll 0 ??logic state? half-bridge tri-state hhl l l 1 ?logic state? low side direct driving hllhl 1 ?logic state? high side direct driving hhhlh figure 5. maximum i c(rms) current vs. switching frequency (1) figure 6. maximum i c(rms) current vs. f sine (1) 1. simulated curves refer to typical igbt parameters and maximum r thj-c. , f 5 0 6 > $ @ i v z > n + ] @ 9 3 1 9 0 r g x o d w l r q l q g h [ 3 ) 7 m ? & |